scholarly journals SPICE Simulation of RRAM-Based Cross-Point Arrays Using the Dynamic Memdiode Model

2021 ◽  
Vol 9 ◽  
Author(s):  
Fernando L. Aguirre ◽  
Sebastián M. Pazos ◽  
Félix Palumbo ◽  
Jordi Suñé ◽  
Enrique Miranda
Keyword(s):  
Previous History ◽  
Point Contact ◽  
Ex Situ ◽  
Hysteresis Phenomenon ◽  
Memory State ◽  
Design Guideline ◽  
Cross Point ◽  
Coupled Equations ◽  
Target Values ◽  
Metal Insulator Metal

We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) intended for neuromorphic computing. The DMM is in line with Prof. Chua’s memristive devices theory, in which the hysteresis phenomenon in electroformed metal-insulator-metal structures is represented by means of two coupled equations: one equation for the current-voltage characteristic of the device based on an extension of the quantum point-contact (QPC) model for dielectric breakdown and a second equation for the memory state, responsible for keeping track of the previous history of the device. By considering ex-situ training of the CPA aimed at classifying the handwritten characters of the MNIST database, we evaluate the performance of a Write-Verify iterative scheme for setting the crosspoint conductances to their target values. The total programming time, the programming error, and the inference accuracy obtained with such writing scheme are investigated in depth. The role played by parasitic components such as the line resistance as well as some CPA’s particular features like the dynamical range of the memdiodes are discussed. The interrelationship between the frequency and amplitude values of the write pulses is explored in detail. In addition, the effect of the resistance shift for the case of a CPA programmed with no errors is studied for a variety of input signals, providing a design guideline for selecting the appropriate pulse’s amplitude and frequency.

scholarly journals Assessment and Improvement of the Pattern Recognition Performance of Memdiode-Based Cross-Point Arrays with Randomly Distributed Stuck-at-Faults

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2427
Author(s):  
Fernando L. Aguirre ◽  
Sebastián M. Pazos ◽  
Félix Palumbo ◽  
Antoni Morell ◽  
Jordi Suñé ◽  
...  
Keyword(s):  
Pattern Recognition ◽  
Recognition Performance ◽  
State Parameter ◽  
Ex Situ ◽  
Memory State ◽  
Cross Point ◽  
Coupled Equations ◽  
Mapping Strategy ◽  
Current Voltage ◽  
Human Faces

In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive cross-point array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) intended for pattern recognition tasks is investigated by means of realistic SPICE simulations. The quasi-static memdiode model (QMM) is considered here for the modelling of the synaptic weights implemented with memristors. Following the standard memristive approach, the QMM comprises two coupled equations, one for the electron transport based on the double-diode equation with a single series resistance and a second equation for the internal memory state of the device based on the so-called logistic hysteron. By modifying the state parameter in the current-voltage characteristic, SAFs of different severeness are simulated and the final outcome is analysed. Supervised ex-situ training and two well-known image datasets involving hand-written digits and human faces are employed to assess the inference accuracy of the SLP as a function of the faulty device ratio. The roles played by the memristor’s electrical parameters, line resistance, mapping strategy, image pixelation, and fault type (stuck-at-ON or stuck-at-OFF) on the CPA performance are statistically analysed following a Monte-Carlo approach. Three different re-mapping schemes to help mitigate the effect of the SAFs in the SLP inference phase are thoroughly investigated.

Response of metal-insulator-metal point contact diodes to visible laser light

1981 ◽  
Vol 25 (1) ◽  
pp. 7-12 ◽  
Author(s):  
H. -U. Daniel ◽  
M. Steiner ◽  
H. Walther
Keyword(s):  
Laser Light ◽  
Point Contact ◽  
Metal Insulator ◽  
Metal Insulator Metal ◽  
Visible Laser

Comprehensive Methodology for ReRAM and Selector Design Guideline of Cross-point Array

2015 ◽  
Author(s):  
Sangheon Lee ◽  
Sooeun Lee ◽  
Kibong Moon ◽  
Jaehyuk Park ◽  
Byungsub Kim ◽  
...  
Keyword(s):  
Design Guideline ◽  
Cross Point

The Effect of Disk Warpage/Skew on the Deflection and Vibration of a Flexible Disk Spinning Above a Baseplate and in Contact With a Point-Head

1997 ◽  
Vol 119 (1) ◽  
pp. 64-70 ◽  
Author(s):  
R. Y. Wu ◽  
G. G. Adams
Keyword(s):  
Film Thickness ◽  
Rotational Speed ◽  
Numerical Solutions ◽  
Point Contact ◽  
Angle Variation ◽  
Coupled Equations ◽  
Close Proximity ◽  
Small Change ◽  
Flexible Disk ◽  
Air Film

A flexible disk, with small initial warpage/skew, is spinning in close proximity to a stationary baseplate. The partial differential equation for the disk deflection is coupled to the Reynolds equation of the stabilizing air-film. Disk warpage/skew produces a small change in the deflection which rotates with the disk. These deflections are obtained by linearizing the coupled equations about the axisymmetric configuration corresponding to a perfect disk. Numerical solutions are obtained and compared for different values of rotational speed and air-film thickness. The results show that among the three skewed/warped disks modeled, the skewed disk (i.e., the plane of the disk is skewed with respect to its axis of rotation) produces the largest deflection change (axial runout). With the effect of a point-contact head included, the existence of disk warpage/skew causes the head to produce a spatially-fixed harmonically varying force. The total disk motion is determined by superposition of the deflection pattern fixed on the disk and the space-fixed head-induced vibration. The disk pitch angle variation at the head is obtained and the results are compared for various values of the rotational speed and air-film thickness.

Metal-insulator-metal point-contact diodes as a rectifier for rectenna

2010 ◽  
Author(s):  
Prakash Periasamy ◽  
Jeremy D. Bergeson ◽  
Philip A. Parilla ◽  
David S. Ginley ◽  
Ryan P. O'Hayre
Keyword(s):  
Point Contact ◽  
Metal Insulator ◽  
Metal Insulator Metal
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