scholarly journals Trends in Performance Limits of the HOT Infrared Photodetectors

2021 ◽  
Vol 11 (2) ◽  
pp. 501
Author(s):  
Antoni Rogalski ◽  
Piotr Martyniuk ◽  
Małgorzata Kopytko ◽  
Weida Hu
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Focal Plane Arrays ◽  
Cryogenic Cooling ◽  
Performance Limits ◽  
Photon Detectors ◽  
Long Wavelength ◽  
Thermal Detectors ◽  
Thermal Imagers ◽  
Multispectral Detection

The cryogenic cooling of infrared (IR) photon detectors optimized for the mid- (MWIR, 3–5 µm) and long wavelength (LWIR, 8–14 µm) range is required to reach high performance. This is a major obstacle for more extensive use of IR technology. Focal plane arrays (FPAs) based on thermal detectors are presently used in staring thermal imagers operating at room temperature. However, their performance is modest; thermal detectors exhibit slow response, and the multispectral detection is difficult to reach. Initial efforts to develop high operating temperature (HOT) photodetectors were focused on HgCdTe photoconductors and photoelectromagnetic detectors. The technological efforts have been lately directed on advanced heterojunction photovoltaic HgCdTe detectors. This paper presents the several approaches to increase the photon-detectors room-temperature performance. Various kinds of materials are considered: HgCdTe, type-II AIIIBV superlattices, two-dimensional materials and colloidal quantum dots.

HOT infrared photodetectors

2013 ◽  
Vol 21 (2) ◽  
Author(s):  
P. Martyniuk ◽  
A. Rogalski
Keyword(s):  
Operating Temperature ◽  
Focal Plane Arrays ◽  
Ternary Alloys ◽  
Thermal Detector ◽  
Photon Detectors ◽  
Thermal Imagers ◽  
Hot Detectors ◽  
Hgcdte Photodetectors ◽  
Multispectral Detection ◽  
Detector Materials

AbstractAt present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection.Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

High-Performance Long-Wavelength Infrared HgCdTe Focal Plane Arrays Fabricated on CdSeTe Compliant Si Substrates

2010 ◽  
Vol 57 (4) ◽  
pp. 782-787 ◽  
Author(s):  
Priyalal S. Wijewarnasuriya ◽  
Yuanping Chen ◽  
Gregory Brill ◽  
Bahram Zandi ◽  
Nibir K. Dhar
Keyword(s):  
Focal Plane ◽  
High Performance ◽  
Focal Plane Arrays ◽  
Long Wavelength ◽  
Si Substrates ◽  
Long Wavelength Infrared

scholarly journals Sub-terahertz and terahertz generation in long-wavelength quantum cascade lasers

Nanophotonics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 2235-2241 ◽  
Author(s):  
Kazuue Fujita ◽  
Shohei Hayashi ◽  
Akio Ito ◽  
Masahiro Hitaka ◽  
Tatsuo Dougakiuchi
Keyword(s):  
Quantum Cascade Laser ◽  
High Performance ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Frequency Range ◽  
Long Wavelength ◽  
Quantum Cascade ◽  
Peak Output Power ◽  
Electrically Pumped ◽  
Cascade Lasers

AbstractTerahertz quantum cascade laser sources with intra-cavity non-linear frequency mixing are the first room-temperature electrically pumped monolithic semiconductor sources that operate in the 1.2–5.9 THz spectral range. However, high performance in low-frequency range is difficult because converted terahertz waves suffer from significantly high absorption in waveguides. Here, we report a sub-terahertz electrically pumped monolithic semiconductor laser. This sub-terahertz source is based on a high-performance, long-wavelength (λ ≈ 13.7 μm) quantum cascade laser in which high-efficiency terahertz generation occurs. The device produces peak output power of 11 μW within the 615–788 GHz frequency range at room temperature. Additionally, a source emitting at 1.5 THz provides peak output power of 287 μW at 110 K. The generated terahertz radiation of <2 THz is mostly attributable to the optical rectification process in long-wavelength infrared quantum cascade lasers.

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Star-shaped arylacetylene resins derived from silicon

2020 ◽  
Vol 40 (8) ◽  
pp. 676-684
Author(s):  
Niping Dai ◽  
Junkun Tang ◽  
Manping Ma ◽  
Xiaotian Liu ◽  
Chuan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Mechanical Test ◽  
Flexural Modulus ◽  
Mechanical Analysis ◽  
Reinforced Composites ◽  
Scanning Calorimetry ◽  
Chemical Structures ◽  
Structures And Properties ◽  
High Performance Resin

AbstractStar-shaped arylacetylene resins, tris(3-ethynyl-phenylethynyl)methylsilane, tris(3-ethynyl-phenylethynyl) phenylsilane, and tris (3-ethynyl-phenylethynyl) silane (TEPHS), were synthesized through Grignard reaction between 1,3-diethynylbenzene and three types of trichlorinated silanes. The chemical structures and properties of the resins were characterized by means of nuclear magnetic resonance, fourier-transform infrared spectroscopy, Haake torque rheomoter, differential scanning calorimetry, dynamic mechanical analysis, mechanical test, and thermogravimetric analysis. The results show that the melt viscosity at 120 °C is lower than 150 mPa⋅s, and the processing windows are as wide as 60 °C for the resins. The resins cure at the temperature as low as 150 °C. The good processabilities make the resins to be suitable for resin transfer molding. The cured resins exhibit high flexural modulus and excellent heat-resistance. The flexural modulus of the cured TEPHS at room temperature arrives at as high as 10.9 GPa. Its temperature of 5% weight loss (Td5) is up to 697 °C in nitrogen. The resins show the potential for application in fiber-reinforced composites as high-performance resin in the field of aviation and aerospace.

scholarly journals Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1692
Author(s):  
Emmanuel K. Ampadu ◽  
Jungdong Kim ◽  
Eunsoon Oh
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Photovoltaic Device ◽  
Photovoltaic Devices ◽  
Temperature Spectrum ◽  
Terahertz Region ◽  
Room Temperature Spectrum ◽  
Ftir Spectrometer ◽  
Titanium Substrates ◽  
Deposition Conditions

We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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