scholarly journals Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire

2021 ◽  
Vol 11 (20) ◽  
pp. 9419
Author(s):  
Sergey Lazarev ◽  
Young Yong Kim ◽  
Luca Gelisio ◽  
Zhaoxia Bi ◽  
Ali Nowzari ◽  
...  
Keyword(s):  
Applied Voltage ◽  
Strain Field ◽  
Structural Changes ◽  
Piezoelectric Properties ◽  
Semiconductor Nanowires ◽  
High Importance ◽  
Gan Nanowires ◽  
Metallic Contacts ◽  
Gan Nanowire ◽  
Different Diameters

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires.

scholarly journals Structural Changes in a Single GaN Nanowire under Applied Voltage Bias

Nano Letters ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 5446-5452 ◽  
Author(s):  
Sergey Lazarev ◽  
Dmitry Dzhigaev ◽  
Zhaoxia Bi ◽  
Ali Nowzari ◽  
Young Yong Kim ◽  
...  
Keyword(s):  
Applied Voltage ◽  
Structural Changes ◽  
Voltage Bias ◽  
Gan Nanowire

scholarly journals Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale ◽  
2016 ◽  
Vol 8 (10) ◽  
pp. 5682-5687 ◽  
Author(s):  
Changyi Li ◽  
Sheng Liu ◽  
Ting. S. Luk ◽  
Jeffrey J. Figiel ◽  
Igal Brener ◽  
...  
Keyword(s):  
Shape Control ◽  
Intrinsic Polarization ◽  
Cross Sectional ◽  
Polarization Control ◽  
Gan Nanowires ◽  
Linearly Polarized ◽  
Gan Nanowire ◽  
Sectional Shape ◽  
Nanowire Lasers

We demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control.

Study on the Piezoelectric Behavior and Structural Changes of Strontium Doped PZT Ceramics

2016 ◽  
Vol 869 ◽  
pp. 13-18
Author(s):  
Margarete Soares da Silva ◽  
Lucas L. Silva ◽  
Eliane F. Souza ◽  
Elson Longo ◽  
Maria A. Zaghete ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Room Temperature ◽  
Structural Changes ◽  
Piezoelectric Properties ◽  
Lead Zirconate ◽  
Strontium Content ◽  
Pzt Ceramics ◽  
Ceramic Samples ◽  
Piezoelectric Behavior ◽  
Piezoelectric Devices

Some piezoelectric properties of lead zirconate titanate PbZr0.53Ti0.47O3 ceramic samples sintered at 1100oC for 3 hours has been investigated in this work and compared to the strontium modification at 0.2, 0.4, and 0.6 mol%. Polarization versus Electric Field curve and d33 and Kp piezoelectric parameters was taken at room temperature in order to investigate the correlation with phase amount and lattice parameters of crystalline phases calculated through Rietveld refinement. The results indicated the lead substitution with 0.4 mol% of strontium enhances the d33 and Kp piezoelectric parameters, but there is no systematic variation of the piezoelectric properties with strontium content. By the other hand, tetragonal phase seems plays an important rule on piezoelectric devices operating near the room temperature and some correlations could be found.

Effects of Barium Substitution on the Structure and Properties of PSZT Piezoelectric Ceramics

2010 ◽  
Vol 650 ◽  
pp. 103-108
Author(s):  
Yu Hua Feng ◽  
Tie Zheng Pan ◽  
Xiang Qian Shen ◽  
Hao Jie Song ◽  
Li Ping Guo
Keyword(s):  
Curie Temperature ◽  
Structural Changes ◽  
Piezoelectric Properties ◽  
Relative Dielectric Constant ◽  
Piezoelectric Ceramics ◽  
X Ray Diffraction ◽  
Piezoelectric Strain ◽  
High Dielectric ◽  
Dielectric And Piezoelectric Properties ◽  
Piezoelectric Strain Constant

Piezoelectric ceramics with appropriate curie temperatures and high dielectric and piezoelectric performances are attractive for formations of ceramic/polymer piezoelectric composites. The PSZT ceramics with compositions of 0.98Pb1.0-xBaxTi0.48Zr0.52O3-0.02PbSbO3 (x=0.14~0.24) have been prepared by a conventional solid reaction process. The ceramic structures are analyzed by X-ray diffraction and the barium substitution leads to structural changes of the tetragonal and rhombohedral phases which constitute the perovskite PSZT ceramics, and lattice distortions. The curie temperature almost linearly decreases from 226 °C to 141 °C corresponding the barium content increases from 0.14 to 0.24 in the ceramics. The dielectric and piezoelectric properties are largely influenced by the barium substitution and when the barium content at vicinity of 0.22, the piezoelectric strain constant d33 exhibits a dramatic change. It is found that as the barium content around 0.22, the PSZT ceramic specimen is characterized with a low curie temperature Tc=156 °C, and satisfied dielectric and piezoelectric properties with the relative dielectric constant εr=5873, dielectric loss factor tanδ=0.0387, piezoelectric strain constant d33=578 pC/N.

Characteristics of Dielectrophoretically Aligned UV-Blue GaN Nanowire LEDs

2008 ◽  
Vol 8 (1) ◽  
pp. 268-273 ◽  
Author(s):  
Tae-Hong Kim ◽  
Seung-Yong Lee ◽  
Hyung-Gu Kim ◽  
Sang-Hoon Kim ◽  
Chang-Hee Hong ◽  
...  
Keyword(s):  
Metal Layer ◽  
Forward Bias ◽  
Blue Emission ◽  
Carrier Injection ◽  
Electrical And Optical Properties ◽  
High Brightness ◽  
Light Emitting ◽  
Gan Nanowires ◽  
Sharp Turn ◽  
Gan Nanowire

This is a report on the characteristics of UV-blue light emitting diodes (LEDs) containing homojunction gallium nitride (GaN) nanowires (NWs). These LEDs were prepared by the dielectrophoresis assisted assembly deposition (DAAD) method. The incorporation of an additional silicon dioxide (SiO2) and a Au capping metal layer was found to improve the electrical and optical properties of the DAAD-prepared GaN NW LEDs. These LEDs exhibited a parasitic series resistance of 120–180 kΩ with a sharp turn-on forward voltage of 3.4–4.0 V and had as low as ∼7 × 10−7 A of leakage current for a reverse bias of −10 V. Typical electroluminescence (EL) spectra, observed from these LEDs under a forward bias, had a broad ultraviolet (UV)-blue emission with a wavelength of 388–422 nm. These LEDs could be seen with the naked eye. We concluded that the high-brightness EL spectra resulted from the enhancement of the carrier injection due to the size effect of the n-GaN nanowires on the p-GaN substrate.

A highly sensitive label-free electrochemical immunosensor based on an aligned GaN nanowires array/polydopamine heterointerface modified with Au nanoparticles

2019 ◽  
Vol 7 (9) ◽  
pp. 1442-1449 ◽  
Author(s):  
Qingyun Liu ◽  
Taotao Yang ◽  
Yongqin Ye ◽  
Ping Chen ◽  
Xiaoning Ren ◽  
...  
Keyword(s):  
Au Nanoparticles ◽  
Nanowire Array ◽  
Electrochemical Immunosensor ◽  
Label Free ◽  
Array Configuration ◽  
Gan Nanowires ◽  
Nanowire Surface ◽  
Highly Sensitive ◽  
Gan Nanowire ◽  
Nanowires Array

Taking advantage of a nanowire array configuration and a semiconductor/polymer heterointerface, a highly sensitive label-free electrochemical immunosensor was developed through integration of polydopamine on an aligned GaN nanowire surface.

Characterization of GaN nanowires and light-emitting devices based on a GaN nanowire-PVK nanocomposite

2003 ◽  
Vol 135-136 ◽  
pp. 743-744 ◽  
Author(s):  
M. Kim ◽  
B.-H. Jeon ◽  
J.-Y. Kim ◽  
J.-H. Choi
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Gan Nanowires ◽  
Gan Nanowire

Recombination Dynamics of Surface-Related Excitonic States in Single ZnO Nanowires

2008 ◽  
Vol 8 (1) ◽  
pp. 228-232 ◽  
Author(s):  
Tobias Voss ◽  
Lars Wischmeier
Keyword(s):  
Low Temperatures ◽  
Optical Spectra ◽  
Semiconductor Nanowires ◽  
Emission Lines ◽  
Time Resolved ◽  
Photoluminescence Studies ◽  
Different Diameters ◽  
Excitonic States ◽  
Time Resolved Photoluminescence ◽  
Recombination Dynamics

With decreasing diameter the influence of surface-related effects becomes increasingly important for an understanding of the optical properties of semiconductor nanowires. We present time integrated and time resolved photoluminescence studies of single zincoxide nanowires with different diameters. We analyze the changes in the optical spectra for wires with different surface-to-volume ratios, present optical spectra of single wires at different excitation densities, and study the time-resolved dynamics of the surface related and donor-bound exciton related emission lines for a single nanowire at low temperatures.

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