scholarly journals In Situ Encapsulated Pt Nanoparticles Dispersed in Low Temperature Oxygen for Partial Oxidation of Methane to Syngas

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 720 ◽  
Author(s):  
Junwen Wang ◽  
Lichao Ma ◽  
Chuanmin Ding ◽  
Yanan Xue ◽  
Yongkang Zhang ◽  
...  

Highly dispersed ultra-small Pt nanoparticles limited in nanosized silicalite-1 zeolite were prepared by in situ encapsulation strategy using H2PtCl6·6H2O as a precursor and tetrapropylammonium hydroxide as a template. The prepared Pt@S-1 catalyst was characterized by X-ray diffraction (XRD), inductively coupled plasma (ICP), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), N2 adsorption-desorption, CO adsorption, and TGA techniques and exhibited unmatched catalytic activity and sintering resistance in the partial oxidation of methane to syngas. Strikingly, Pt@S-1 catalyst with further reduced size and increased dispersibility of Pt nanoparticles showed enhanced catalytic activity after low-temperature oxygen calcination. However, for Pt/S-1 catalyst, low-temperature oxygen calcination did not improve its catalytic activity.

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.


2009 ◽  
Vol 105 (9) ◽  
pp. 093506 ◽  
Author(s):  
Alessandra Alberti ◽  
Corrado Bongiorno ◽  
Cristian Mocuta ◽  
Till Metzger ◽  
Corrado Spinella ◽  
...  

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.


1995 ◽  
Vol 405 ◽  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone

AbstractWe report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450°C.


2014 ◽  
Vol 16 (34) ◽  
pp. 18176-18184 ◽  
Author(s):  
Farzad Behafarid ◽  
Sudeep Pandey ◽  
Rosa E. Diaz ◽  
Eric A. Stach ◽  
Beatriz Roldan Cuenya

The thermal and chemical stability of micelle-synthesized size-selected Pt nanoparticles (NPs) supported on thin SiO2(20 nm) films was monitoredin situ viatransmission electron microscopy (TEM) under pure hydrogen and pure oxygen environments.


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