scholarly journals X-ray Photoelectron Spectroscopy Analysis of Nitrogen-Doped TiO2 Films Prepared by Reactive-Ion-Beam Sputtering with Various NH3/O2 Gas Mixture Ratios

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 47 ◽  
Author(s):  
Jin-Cherng Hsu ◽  
Yung-Hsin Lin ◽  
Paul W. Wang
Keyword(s):  
Ion Beam ◽  
Photoelectron Spectra ◽  
Gas Mixture ◽  
Tio2 Films ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Doped Tio2 ◽  
X Ray ◽  
Nitrogen Doped ◽  
Beam Sputtering

Nitrogen-doped TiO2 films were prepared by reactive ion-beam sputtering deposition (IBSD) in a mixed atmosphere of NH3 and O2 at a substrate temperature of 400 °C. X-ray photoelectron spectra revealed the presence of six ions, i.e., N3−, N2−, N1−, N+, N2+, and N3+, respectively, in the films. The amorphous films had complex, randomly oriented chemical bonds. The Tauc–Lorentz model was employed to determine the bandgap energy of the amorphous films prepared using different NH3/O2 gas mixing ratios by ellipsometry. In addition, the optical constants of the films were measured. With the increase in the NH3/O2 gas mixture ratio to 3.0, the bandgap of N-doped TiO2 narrowed to ~2.54 eV.

scholarly journals Особенности фазообразования и электронного строения в пленочных композитах Al-=SUB=-1-x-=/SUB=-Si-=SUB=-x-=/SUB=- при магнетронном и ионно-лучевом напылении

2018 ◽  
Vol 60 (5) ◽  
pp. 1005
Author(s):  
В.А. Терехов ◽  
Д.С. Усольцева ◽  
О.В. Сербин ◽  
И.Е. Занин ◽  
Т.В. Куликова ◽  
...  
Keyword(s):  
Solid Solution ◽  
Silicon Nanocrystals ◽  
Ion Beam ◽  
Composite Films ◽  
Photon Radiation ◽  
Ion Beam Sputtering ◽  
Composite Target ◽  
X Ray ◽  
Beam Sputtering ◽  
Cubic System

AbstractThe peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al_0.75Si_0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al_3Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al_3Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm^2 gives rise to the partial decomposition of the Al_3Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.

X-ray scattering study of interfacial roughness correlation in Mo/Si multilayers fabricated by ion beam sputtering

2000 ◽  
Vol 87 (10) ◽  
pp. 7255-7260 ◽  
Author(s):  
A. Ulyanenkov ◽  
R. Matsuo ◽  
K. Omote ◽  
K. Inaba ◽  
J. Harada ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Interfacial Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Beam Sputtering ◽  
Scattering Study ◽  
Ray Scattering

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Nitrogen-doped ZnO prepared by capillaritron reactive ion beam sputtering deposition

2010 ◽  
Vol 256 (13) ◽  
pp. 4153-4156 ◽  
Author(s):  
Liang-Chiun Chao ◽  
Yu-Ren Shih ◽  
Yao-Kai Li ◽  
Jun-Wei Chen ◽  
Jiun-De Wu ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Nitrogen Doped ◽  
Beam Sputtering ◽  
Doped Zno

MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

1985 ◽  
Vol 56 ◽  
Author(s):  
S.M. PROKES ◽  
F. SPAEPEN
Keyword(s):  
Ion Beam ◽  
Wavelength Dependence ◽  
Dangling Bond ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
Effect Of Copper ◽  
Oxygen Impurities ◽  
Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

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