scholarly journals Evaluation of SnS:Cu Thin Film Properties Obtained by USP Technique to Implement It as an Absorbent Layer in Solar Cells Using SCAPS

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 754
Author(s):  
Sergio Rodríguez-Castro ◽  
Carlos Álvarez-Macías ◽  
Michel Rivero ◽  
Lizbeth Salgado-Conrado ◽  
Rodrigo Loera-Palomo ◽  
...  

Tin sulfide doped with copper (SnS:Cu) thin films were deposited on glass substrates by the ultrasonic spray pyrolysis (USP) technique at different concentration ratios (y = [Cu]/[Sn] = 0% (undoped), 2%, 5% and 10%). The aim of this work is to analyze the effect of copper on structural, morphological, and optoelectronic properties of SnS:Cu and discuss their possible application as an absorber layer in a solar cell structure proposed which is simulated using SCAPS software. X-ray diffraction (XRD) reveals an orthorhombic structure in the undoped sample and a cubic structure in doped ones. Raman spectroscopy suggests a possible unit cell size change due to the addition of Cu. Scanning electron microscopy (SEM) shows growth in grain density with an increasing y. Image analysis based on second-order features was used to discuss grain distribution. UV-VIS spectroscopy helps to find an increase of bandgap for the doped samples when copper concentration increases, going from 1.82 eV in the doped film y = 2% to 2.2 eV in the 10% doped samples. A value of 3.51 eV was found for the undoped sample y = 0%. A rise in both carrier concentration and mobility but a decrease in resistivity when y is increased was observed through the Hall–Van der Pauw technique. Simulations by SCAPS helped conclude that considering the material thickness, the SnS:Cu compound can be an alternative for implementation in the manufacturing of solar cells as an absorber layer since it is possible to obtain the optoelectronic properties necessary using the UPS economical technique.

2016 ◽  
Vol 24 (06) ◽  
pp. 1750073 ◽  
Author(s):  
I. S. AMIRI ◽  
H. AHMAD ◽  
M. M. ARIANNEJAD ◽  
M. F. ISMAIL ◽  
K. THAMBIRATNAM ◽  
...  

This work examines the performance of the Cu2SnS3 (CTS) solar cells using the solar cell capacitance simulator (SCAPS) approach. The performance of the CTS solar cell was evaluated in terms of [Formula: see text], [Formula: see text], fill factor and efficiency. The structural parameter variation of CTS solar cell has been studied in terms of buffer and absorber layer thickness, bandgap, effect of temperature on total efficiency of the solar cell. Increasing the thickness of the CdS buffer layer decreases the efficiency of the simulated solar cell. A significant increase in the efficiency of the solar cell to 20.36% was obtained with a simulated buffer layer thickness to 10[Formula: see text]nm. In terms of the CTS absorber layer thickness, the efficiency of the solar cell increases by increasing the thickness of absorber layer. By setting the thickness of CTS to 4.0[Formula: see text][Formula: see text]m, the efficiency obtained is 20.36%. It is observed that an increase in the bandgap can enhance the efficiency of the solar cell. In the performed simulation, an 0.9[Formula: see text]eV bandgap resulted in a 11.58% cell efficiency and a 1.25[Formula: see text]eV bandgap resulted in 21.96% cell efficiency. In terms of temperature, the efficiency of 20.36% was obtained at 300[Formula: see text]K, and as the temperature increases, cell efficiency will decrease.


Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 548 ◽  
Author(s):  
Dongho Lee ◽  
JungYup Yang

Copper Zinc Tin Sulfide (C2ZTS4) solar cells have become a fascinating research topic due to several advantages of the C2ZTS4 absorber layer, such as having non-toxic and abundantly available components. Superstrate structured C2ZTS4 solar cells were fabricated on the top of a fluorine-doped tin oxide (FTO) substrate with a spray pyrolysis method from the window layer to the absorber layer. Titanium dioxide (TiO2) and indium sulfide (In2S3) were used as the window and buffer layer, respectively. The source materials for the C2ZTS4 and buffer layers were all aqueous-based solutions. The metallic component ratio, Cu/(Zn + Sn), and the sulfur concentration in the solutions were systematically investigated. The optimum ratio of Cu/(Zn + Sn) in the film is about 0.785, while 0.18 M thiourea in the solution is the best condition for high performance. The C2ZTS4 layers deposited at lower temperatures (<360 °C) yielded a low quality resulting in low current density (JSC). On the other hand, the C2ZTS4 layers deposited at high temperature (~400 °C) showed a low fill factor (FF) without degradation of the open-circuit voltage (VOC) and JSC due to the junction degradation and high contact resistance between the absorber layer and metal contact. The best cell efficiency, VOC, JSC, and fill factor achieved were 3.34%, 383 mV, 24.6 mA/cm2, and 37.7%, respectively.


Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1508
Author(s):  
Ana C. Piñón Reyes ◽  
Roberto C. Ambrosio Lázaro ◽  
Karim Monfil Leyva ◽  
José A. Luna López ◽  
Javier Flores Méndez ◽  
...  

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 389
Author(s):  
Mohammad Aminul Islam ◽  
Yasmin Abdu Wahab ◽  
Mayeen Uddin Khandaker ◽  
Abdullah Alsubaie ◽  
Abdulraheem SA Almalki ◽  
...  

Copper oxide (CuxO) films are considered to be an attractive hole-transporting material (HTM) in the inverted planar heterojunction perovskite solar cells due to their unique optoelectronic properties, including intrinsic p-type conductivity, high mobility, low-thermal emittance, and energy band level matching with the perovskite (PS) material. In this study, the potential of reactive sputtered CuxO thin films with a thickness of around 100 nm has been extensively investigated as a promising HTM for effective and stable perovskite solar cells. The as-deposited and annealed films have been characterized by using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Photoluminescence (PL), UV-Vis spectroscopy, and Hall-effect measurement techniques. The significant change in structural and optoelectronic properties has been observed as an impact of the thermal annealing process. The phase conversion from Cu2O to CuO, including grain size increment, was observed upon thermal annealing. The transmittance and optical bandgap were found to vary with the films’ crystallographic transformation. The predominant p-type conductivity and optimum annealing time for higher mobility have been confirmed from the Hall measurement. Films’ optoelectrical properties were implemented in the complete perovskite solar cell for numerical analysis. The simulation results show that a 40 min annealed CuxO film yields the highest efficiency of 22.56% with a maximum open-circuit voltage of 1.06 V.


2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.


2021 ◽  
Vol 91 ◽  
pp. 106077
Author(s):  
Faiza Jan Iftikhar ◽  
Qamar Wali ◽  
Shengyuan Yang ◽  
Yaseen Iqbal ◽  
Rajan Jose ◽  
...  

2021 ◽  
Author(s):  
Varun Ojha ◽  
Giorgio Jansen ◽  
Andrea Patanè ◽  
Antonino La Magna ◽  
Vittorio Romano ◽  
...  

AbstractWe propose a two-stage multi-objective optimization framework for full scheme solar cell structure design and characterization, cost minimization and quantum efficiency maximization. We evaluated structures of 15 different cell designs simulated by varying material types and photodiode doping strategies. At first, non-dominated sorting genetic algorithm II (NSGA-II) produced Pareto-optimal-solutions sets for respective cell designs. Then, on investigating quantum efficiencies of all cell designs produced by NSGA-II, we applied a new multi-objective optimization algorithm II (OptIA-II) to discover the Pareto fronts of select (three) best cell designs. Our designed OptIA-II algorithm improved the quantum efficiencies of all select cell designs and reduced their fabrication costs. We observed that the cell design comprising an optimally doped zinc-oxide-based transparent conductive oxide (TCO) layer and rough silver back reflector (BR) offered a quantum efficiency ($$Q_e$$ Q e ) of 0.6031. Overall, this paper provides a full characterization of cell structure designs. It derives relationship between quantum efficiency, $$Q_e$$ Q e of a cell with its TCO layer’s doping methods and TCO and BR layer’s material types. Our solar cells design characterization enables us to perform a cost-benefit analysis of solar cells usage in real-world applications.


RSC Advances ◽  
2021 ◽  
Vol 11 (44) ◽  
pp. 27570-27582
Author(s):  
Sabir Ali Siddique ◽  
Muhammad Arshad ◽  
Sabiha Naveed ◽  
Muhammad Yasir Mehboob ◽  
Muhammad Adnan ◽  
...  

We used a quantum chemical approach to investigate the optoelectronic properties of dyes T1–T5 for dye-sensitized solar cells using DFT and TD-DFT computation. The newly designed molecules exhibited outstanding photovoltaic and optoelectronic properties.


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