scholarly journals DLC-Based Coatings Obtained by Low-Frequency Plasma-Enhanced Chemical Vapor Deposition (LFPECVD) in Cyclohexane, Principle and Examples

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1225
Author(s):  
Frederic Sanchette ◽  
Mohamed El Garah ◽  
Sofiane Achache ◽  
Frederic Schuster ◽  
Caroline Chouquet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Short Review ◽  
Active Electrode ◽  
Rf Discharges ◽  
Frequency Plasma ◽  
Vapor Deposition Technique ◽  
Carbon Based

The LFPECVD (Low-Frequency Plasma-Enhanced Chemical Vapor Deposition) technique is now used on an industrial scale for the deposition of carbon-based coatings for several applications. This short review recalled the main principles of LFPECVD and provided examples of DLC-based films. The main differences between low-frequency (LF) and radio-frequency (RF) discharges were also recalled here and examples of deposition and characterization of carbon-based films were proposed. The influence of the bias voltage or the temperature of the active electrode on the deposition rate and the structure of a-C: H films obtained in cyclohexane/hydrogen mixtures was first discussed. Next, the properties of carbon-based films doped with silicon were described and, finally, it was shown that multilayer architectures make it possible to reduce the stresses without altering their tribological properties.

Silicon-germanium films deposited by low-frequency plasma-enhanced chemical vapor deposition: Effect of H2 and Ar dilution

2006 ◽  
Vol 21 (1) ◽  
pp. 88-104 ◽  
Author(s):  
A. Kosarev ◽  
A. Torres ◽  
Y. Hernandez ◽  
R. Ambrosio ◽  
C. Zuniga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Relative Rate ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Optical Measurements ◽  
Conduction Band Edge ◽  
Frequency Plasma

We have studied structure and electrical properties of Si1−YGeY:H films deposited by low-frequency plasma-enhanced chemical vapor deposition over the entire composition range from Y = 0 to Y = 1. The deposition rate of the films and their structural and electrical properties were measured for various ratios of the germane/silane feed gases and with and without dilution by Ar and by H2. Structure and composition was studied by Auger electron spectroscopy (AES), secondary ion mass spectroscopy (SIMS), and Fourier transform infrared (FTIR) spectroscopy. Surface morphology was characterized by atomic force microscopy (AFM). We found that the deposition rate increased with Y, maximizing at Y = 1 without dilution. The relative rate of Ge and Si incorporation is affected by dilution. Hydrogen preferentially bonds to silicon. Hydrogen content decreases for increasing Y. In addition, optical measurements showed that as Y goes for 0 to 1, the Fermi level moves from mid gap to the conduction band edge; i.e., the films become more n-type. No correlation was found between the pre-exponential and the activation energy of conductivity. The behavior of the conductivity γ-factor suggests a local minimum in the density of states at E ≈ 0.33 eV for the films grown with or without H-dilution and E ≈ 0.25 eV for the films with Ar dilution.

Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition

1998 ◽  
Vol 83 (1) ◽  
pp. 554-560 ◽  
Author(s):  
Tomoyo Yamaguchi ◽  
Naoshi Sakamoto ◽  
Mitsuo Shimozuma ◽  
Masaki Yoshino ◽  
Hiroaki Tagashira
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Particle Formation ◽  
Film Deposition ◽  
Frequency Plasma
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