scholarly journals On the New Oxyarsenides Eu5Zn2As5O and Eu5Cd2As5O

Crystals ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 475
Author(s):  
Gregory Darone ◽  
Sviatoslav Baranets ◽  
Svilen Bobev
Keyword(s):  
Electronic Band Structure ◽  
Charge Balance ◽  
X Ray Diffraction ◽  
Electronic Band ◽  
Cell Parameters ◽  
Pearson Symbol ◽  
Formal Charge ◽  
Valence Electrons ◽  
Metal Flux ◽  
Structure Calculations

The new quaternary phases Eu5Zn2As5O and Eu5Cd2As5O have been synthesized by metal flux reactions and their structures have been established through single-crystal X-ray diffraction. Both compounds crystallize in the centrosymmetric space group Cmcm (No. 63, Z = 4; Pearson symbol oC52), with unit cell parameters a = 4.3457(11) Å, b = 20.897(5) Å, c = 13.571(3) Å; and a = 4.4597(9) Å, b = 21.112(4) Å, c = 13.848(3) Å, for Eu5Zn2As5O and Eu5Cd2As5O, respectively. The crystal structures include one-dimensional double-strands of corner-shared MAs4 tetrahedra (M = Zn, Cd) and As–As bonds that connect the tetrahedra to form pentagonal channels. Four of the five Eu atoms fill the space between the pentagonal channels and one Eu atom is contained within the channels. An isolated oxide anion O2– is located in a tetrahedral hole formed by four Eu cations. Applying the valence rules and the Zintl concept to rationalize the chemical bonding in Eu5M2As5O (M = Zn, Cd) reveals that the valence electrons can be counted as follows: 5 × [Eu2+] + 2 × [M2+] + 3 × [As3–] + 2 × [As2–] + O2–, which suggests an electron-deficient configuration. The presumed h+ hole is confirmed by electronic band structure calculations, where a fully optimized bonding will be attained if an additional valence electron is added to move the Fermi level up to a narrow band gap (Eu5Zn2As5O) or pseudo-gap (Eu5Cd2As5O). In order to achieve such a formal charge balance, and hence, narrow-gap semiconducting behavior in Eu5M2As5O (M = Zn, Cd), europium is theorized to be in a mixed-valent Eu2+/ Eu3+ state.

scholarly journals Antiferromagnetic Ordering and Transport Anomalies in Single-Crystalline CeAgAs2

Materials ◽  
2020 ◽  
Vol 13 (17) ◽  
pp. 3865
Author(s):  
Maria Szlawska ◽  
Daniel Gnida ◽  
Piotr Ruszała ◽  
Maciej J. Winiarski ◽  
Małgorzata Samsel-Czekała ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Electronic Band Structure ◽  
Chemical Vapor ◽  
Chemical Vapor Transport ◽  
Gap Formation ◽  
X Ray Diffraction ◽  
Electronic Band ◽  
Antiferromagnetic Ordering ◽  
Structure Calculations ◽  
Distinct Increase

Single crystals of the ternary cerium arsenide CeAgAs2 were grown by chemical vapor transport. They were studied by means of x-ray diffraction, magnetization, heat capacity and electrical transport measurements. The experimental research was supplemented with electronic band structure calculations. The compound was confirmed to order antiferromagnetically at the Néel temperature of 4.9 K and to undergo metamagnetic transition in a field of 0.5 T at 1.72 K. The electrical resistivity shows distinct increase at low temperatures, which origin is discussed in terms of pseudo-gap formation in the density of states at the Fermi level and quantum corrections to the resistivity in the presence of atom disorder due to crystal structure imperfections.

scholarly journals Synthesis, structural characterization, and electronic structure of the novel Zintl phase Ba2ZnP2

2020 ◽  
Vol 76 (9) ◽  
pp. 869-873
Author(s):  
Adam Balvanz ◽  
Sviatoslav Baranets ◽  
Svilen Bobev
Keyword(s):  
Electronic Band Structure ◽  
Structure Type ◽  
The Novel ◽  
X Ray Diffraction ◽  
Orthorhombic Space Group ◽  
Zintl Phase ◽  
Electronic Band ◽  
Intrinsic Semiconductor ◽  
Valence Electrons ◽  
First Time

The novel Zintl phase dibarium zinc diphosphide (Ba2ZnP2) was synthesized for the first time. This was accomplished using the Pb flux technique, which allowed for the growth of crystals of adequate size for structural determination via single-crystal X-ray diffraction methods. The Ba2ZnP2 compound was determined to crystallize in a body-centered orthorhombic space group, Ibam (No. 72). Formally, this crystallographic arrangement belongs to the K2SiP2 structure type. Therefore, the structure can be best described as infinite [ZnP2]4− polyanionic chains with divalent Ba2+ cations located between the chains. All valence electrons are partitioned, which conforms to the Zintl–Klemm concept and suggests that Ba2ZnP2 is a valence-precise composition. The electronic band structure of this new compound, computed with the aid of the TB–LMTO–ASA code, shows that Ba2ZnP2 is an intrinsic semiconductor with a band gap of ca 0.6 eV.

Crystal structure characterization and electronic structure of a rare-earth-containing Zintl phase in the Yb–Al–Sb family: Yb3AlSb3

2021 ◽  
Vol 77 (6) ◽  
Author(s):  
Rongqing Shang ◽  
An T. Nguyen ◽  
Allan He ◽  
Susan M. Kauzlarich
Keyword(s):  
Crystal Structure ◽  
Electronic Structure ◽  
Rare Earth ◽  
Electronic Structure Calculations ◽  
Structure Characterization ◽  
Charge Balance ◽  
X Ray Diffraction ◽  
Zintl Phase ◽  
X Ray ◽  
Structure Calculations

A rare-earth-containing compound, ytterbium aluminium antimonide, Yb3AlSb3 (Ca3AlAs3-type structure), has been successfully synthesized within the Yb–Al–Sb system through flux methods. According to the Zintl formalism, this structure is nominally made up of (Yb2+)3[(Al1−)(1b – Sb2−)2(2b – Sb1−)], where 1b and 2b indicate 1-bonded and 2-bonded, respectively, and Al is treated as part of the covalent anionic network. The crystal structure features infinite corner-sharing AlSb4 tetrahedra, [AlSb2Sb2/2]6−, with Yb2+ cations residing between the tetrahedra to provide charge balance. Herein, the synthetic conditions, the crystal structure determined from single-crystal X-ray diffraction data, and electronic structure calculations are reported.

Control of Valence States by a Codoping Method in P-Type GaN Materials

1997 ◽  
Vol 468 ◽  
Author(s):  
T. Yamamoto ◽  
H. Katayama-Yoshtoa
Keyword(s):  
Control Method ◽  
Electronic Band Structure ◽  
Ionic Charge ◽  
Electronic Band ◽  
Valence States ◽  
Madelung Energy ◽  
Valence Control ◽  
P Type ◽  
Structure Calculations ◽  
Codoping Method

ABSTRACTWe propose a new valence control method, the “codoping method (using both n- and p-type dopants at the same time)”, for the fabrication of low-resistivity p-type GaN crystals based on the ab-initio electronic band structure calculations. We have clarified that while doping of acceptor dopants, BeGa and MgGa, leads to destabilization of the ionic charge distributions in p-type GaN crystals, doping of Sica or ON give rise to p-type doped GaN with high doping levels due to a large decrease in the Madelung energy. The codoping of the n- and p-type dopants (the ratio of their concentrations is 1:2) leads to stabilization of the ionic charge distribution inp-type GaN crystals due to a decrease in the Madelung energy, to result in an increase in the net carrier densities.

Efficient Discovery of Optimal N-Layered TMDC Hetero-Structures

MRS Advances ◽  
2018 ◽  
Vol 3 (6-7) ◽  
pp. 397-402 ◽  
Author(s):  
Lindsay Bassman ◽  
Pankaj Rajak ◽  
Rajiv K. Kalia ◽  
Aiichiro Nakano ◽  
Fei Sha ◽  
...  
Keyword(s):  
Band Structure ◽  
Physical Properties ◽  
Band Gap ◽  
Electronic Band Structure ◽  
Transport Coefficients ◽  
Optimization Technique ◽  
Bayesian Optimization ◽  
Material Structure ◽  
Electronic Band ◽  
Structure Calculations

ABSTRACTVertical hetero-structures made from stacked monolayers of transition metal dichalcogenides (TMDC) are promising candidates for next-generation optoelectronic and thermoelectric devices. Identification of optimal layered materials for these applications requires the calculation of several physical properties, including electronic band structure and thermal transport coefficients. However, exhaustive screening of the material structure space using ab initio calculations is currently outside the bounds of existing computational resources. Furthermore, the functional form of how the physical properties relate to the structure is unknown, making gradient-based optimization unsuitable. Here, we present a model based on the Bayesian optimization technique to optimize layered TMDC hetero-structures, performing a minimal number of structure calculations. We use the electronic band gap and thermoelectric figure of merit as representative physical properties for optimization. The electronic band structure calculations were performed within the Materials Project framework, while thermoelectric properties were computed with BoltzTraP. With high probability, the Bayesian optimization process is able to discover the optimal hetero-structure after evaluation of only ∼20% of all possible 3-layered structures. In addition, we have used a Gaussian regression model to predict not only the band gap but also the valence band maximum and conduction band minimum energies as a function of the momentum.

Ab Initio Electronic Structure Studies of CuO Multiferroics

2012 ◽  
Vol 488-489 ◽  
pp. 129-132 ◽  
Author(s):  
C. Kanagaraj ◽  
Baskaran Natesan
Keyword(s):  
First Principles ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Metallic State ◽  
Magnetic Ground State ◽  
Electronic Band ◽  
Functional Theory ◽  
High Tc ◽  
Band Structure Calculations ◽  
Structure Calculations

We have performed detailed structural, electronic and magnetic properties of high - TC multiferroic CuO using first principles density functional theory. The total energy results revealed that AFM is the most stable magnetic ground state of CuO. The DOS and electronic band structure calculations show that in the absence of on-site Coulomb interaction (U), AFM structure of CuO heads to a metallic state. However, upon incorporating U in the calculations, a band gap of 1.2 eV is recovered. Furthermore, the Born effective charges calculated on Cu does not show any anomalous character.This suggests that the polarization seen in CuO could be attributed to the spin induced AFM ordering effect.

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