scholarly journals Influence of Carbon Cap on Self-Diffusion in Silicon Carbide

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 752
Author(s):  
Marianne Etzelmüller Bathen ◽  
Margareta Linnarsson ◽  
Misagh Ghezellou ◽  
Jawad Ul Hassan ◽  
Lasse Vines

Self-diffusion of carbon (12C and 13C) and silicon (28Si and 30Si) in 4H silicon carbide has been investigated by utilizing a structure containing an isotope purified 4H-28Si12C epitaxial layer grown on an n-type (0001) 4H-SiC substrate, and finally covered by a carbon capping layer (C-cap). The 13C and 30Si isotope profiles were monitored using secondary ion mass spectrometry (SIMS) following successive heat treatments performed at 2300–2450∘C in Ar atmosphere using an inductively heated furnace. The 30Si profiles show little redistribution within the studied temperature range, with the extracted diffusion lengths for Si being within the error bar for surface roughening during annealing, as determined by profilometer measurements. On the other hand, a significant diffusion of 13C was observed into the isotope purified layer from both the substrate and the C-cap. A diffusivity of D=8.3×106e−10.4/kBT cm2/s for 13C was extracted, in contrast to previous findings that yielded lower both pre-factors and activation energies for C self-diffusion in SiC. The discrepancy between the present measurements and previous theoretical and experimental works is ascribed to the presence of the C-cap, which is responsible for continuous injection of C interstitials during annealing, and thereby suppressing the vacancy mediated diffusion.

1980 ◽  
Vol 15 (3) ◽  
pp. 702-710 ◽  
Author(s):  
R. W. Cahn ◽  
J. E. Evetts ◽  
J. Patterson ◽  
R. E. Somekh ◽  
C. Kenway Jackson

2001 ◽  
Vol 78 (2) ◽  
pp. 231-233 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
S. Hishita

2008 ◽  
Vol 273-276 ◽  
pp. 685-692
Author(s):  
Masashi Uematsu ◽  
Kenzo Ibano ◽  
Kohei M. Itoh

The effect of the SiO2/Si interface on Si self-diffusion in SiO2 during thermal oxidation was investigated using silicon isotopes. Samples with natSiO2/28Si heterostructures were oxidized at 1150 ~ 1250 °C and the 30Si diffusion in 28SiO2 during the thermal oxidation was investigated by secondary ion mass spectrometry (SIMS) measurements. Near the SiO2/Si interface, a significant profile broadening of the 30Si isotope from natSiO2 toward the newly grown 28SiO2 was observed. This 30Si self-diffusivity sharply decreases with oxidation time and hence with increasing distance between 30Si diffusion region and the interface. This distance-dependent 30Si self-diffusion was simulated taking into account the effect of Si species generated at the interface upon oxidation and diffusing into SiO2 to enhance Si self-diffusion. The simulation fits the SIMS profiles and these results indicate that Si species, most likely SiO, are emitted from the SiO2/Si interface upon Si thermal oxidation to release the oxidation-induced stress, as has been predicted by recent theoretical studies. Furthermore, combined with our recent results on O self-diffusion, the diffusion behavior of the emitted SiO near the SiO2/Si interface is discussed.


2008 ◽  
Vol 600-603 ◽  
pp. 453-456
Author(s):  
Margareta K. Linnarsson ◽  
J. Isberg ◽  
Adolf Schöner ◽  
Anders Hallén

The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.


2005 ◽  
Vol 237-240 ◽  
pp. 277-281 ◽  
Author(s):  
Antônio Claret Soares Sabioni ◽  
Antônio Márcio J.M. Daniel ◽  
W.A.A. Macedo ◽  
M.D. Martins ◽  
Anne Marie Huntz ◽  
...  

Iron bulk self-diffusion coefficients were measured in Fe2O3 single crystals using an original methodology based on the utilization of 57Fe stable isotope as iron tracer and depth profiling by secondary ion mass spectrometry (SIMS). The iron self-diffusion coefficients measured along c-axis direction, between 900 and 1100o C, in oxygen atmosphere, can be described by the following Arrhenius relationship: D(cm2/s)= 5.2x106 exp [-510 (kJ/mol)/RT], and are similar to reliable data available in the literature, obtained by means of radioactive techniques.


2006 ◽  
Vol 527-529 ◽  
pp. 629-632 ◽  
Author(s):  
Howard E. Smith ◽  
Bang Hung Tsao ◽  
James D. Scofield

The accuracy of Secondary Ion Mass Spectrometry (SIMS) depth profiles of aluminum (Al) dopant in silicon carbide (SiC) has been investigated. The Al SIMS profile differs in shape depending on whether it was obtained using a cesium (Cs+) or oxygen (O2 +) primary ion beam, and depends in the former case on which secondary ion is followed. The matrix signals indicate that the CsAl+ secondary ion yield changes during the Cs+ depth profile, probably because of the work function lowering due to the previously-implanted Al. These same matrix ion signals are used for a depth-dependent empirical correction to increase the accuracy of the Al concentration profile. The physics of these phenomena and the accuracy of the correction are discussed.


1996 ◽  
Vol 423 ◽  
Author(s):  
M. K. Linnarsson ◽  
J. P. Doyle ◽  
B. G. Svensson

Abstract6H polytype silicon carbide (SiC) samples of n-type have been implanted with 50 keV H+ ions and subsequently annealed at temperatures between 200 °C and 1150 °C. Using depth profiling by secondary ion mass spectrometry motion of hydrogen is observed in the implanted region for temperatures above 700 °C. A diffusion coefficient of ∼10−14 cm2/s is extracted at 800°C with an approximate activation energy of ∼3.5 eV. Hydrogen displays strong interaction with the implantation-induced defects and stable hydrogen-defect complexes are formed. These complexes anneal out at temperatures in excess of 900°C and are tentatively identified as Carbon-Hydrogen centers at a Si vacancy.


Sign in / Sign up

Export Citation Format

Share Document