A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond
2008 ◽
Vol 600-603
◽
pp. 453-456
Keyword(s):
Group Iv
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The boron diffusion in three kinds of group IV semiconductors: silicon, silicon carbide and synthetic diamond has been studied by secondary ion mass spectrometry. Ion implantation of 300 keV, 11B-ions to a dose of 21014 cm-2 has been performed. The samples are subsequently annealed at temperatures ranging from 800 to 1650 °C for 5 minutes up to 8 hours. In silicon and silicon carbide, the boron diffusion is attributed to a transient process and the level of out-diffusion is correlated to intrinsic carrier concentration. No transient, out-diffused, boron tail is revealed in diamond at these temperatures.
2014 ◽
Vol 778-780
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pp. 575-578
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1994 ◽
Vol 12
(4)
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pp. 2263
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2005 ◽
Vol 237-240
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pp. 998-1003