scholarly journals Improving Output Power of InGaN Laser Diode Using Asymmetric In0.15Ga0.85N/In0.02Ga0.98N Multiple Quantum Wells

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 875
Author(s):  
Wenjie Wang ◽  
Wuze Xie ◽  
Zejia Deng ◽  
Mingle Liao
Keyword(s):  
Quantum Wells ◽  
Output Power ◽  
Laser Diode ◽  
Barrier Layer ◽  
Threshold Current ◽  
Reference Structure ◽  
Multiple Quantum ◽  
Symmetric Quantum ◽  
Low Threshold ◽  
P Type

Herein, the optical field distribution and electrical property improvements of the InGaN laser diode with an emission wavelength around 416 nm are theoretically investigated by adjusting the relative thickness of the first or last barrier layer in the three In0.15Ga0.85N/In0.02Ga0.98N quantum wells, which is achieved with the simulation program Crosslight. It was found that the thickness of the first or last InGaN barrier has strong effects on the threshold currents and output powers of the laser diodes. The optimal thickness of the first quantum barrier layer (FQB) and last quantum barrier layer (LQB) were found to be 225 nm and 300 nm, respectively. The thickness of LQB layer predominantly affects the output power compared to that of the FQB layer, and the highest output power achieved 3.87 times that of the reference structure (symmetric quantum well), which is attributed to reduced optical absorption loss as well as the reduced vertical electron leakage current leaking from the quantum wells to the p-type region. Our result proves that an appropriate LQB layer thickness is advantageous for achieving low threshold current and high output power lasers.

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modulation Doping ◽  
Doping Effects ◽  
Low Threshold ◽  
Current Densities ◽  
First Time

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

scholarly journals Investigation of the Optimum Mg Doping Concentration in p-Type-Doped Layers of InGaN Blue Laser Diode Structures

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1335
Author(s):  
Chibuzo Onwukaeme ◽  
Han-Youl Ryu
Keyword(s):  
Output Power ◽  
Laser Diode ◽  
Doping Concentration ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Blue Laser ◽  
Electron Blocking Layer ◽  
Mg Doping ◽  
Cladding Layer ◽  
P Type

In GaN-based laser diode (LD) structures, Mg doping in p-type-doped layers has a significant influence on the device performance. As the doping concentration increases, the operation voltage decreases, whereas the output power decreases as a result of increased optical absorption, implying that optimization of the Mg doping concentration is required. In this study, we systematically investigated the effect of the Mg doping concentration in the AlGaN electron-blocking layer (EBL) and the AlGaN p-cladding layer on the output power, forward voltage, and wall-plug efficiency (WPE) of InGaN blue LD structures using numerical simulations. In the optimization of the EBL, an Al composition of 20% and an Mg doping concentration of 3 × 1019 cm−3 exhibited the best performance, with negligible electron leakage and a high WPE. The optimum Mg concentration of the p-AlGaN cladding layer was found to be ~1.5 × 1019 cm−3, where the maximum WPE of 38.6% was obtained for a blue LD with a threshold current density of 1 kA/cm2 and a slope efficiency of 2.1 W/A.

Effects of a prestrained InGaN interlayer on the emission properties of InGaN/GaN multiple quantum wells in a laser diode structure

2013 ◽  
Vol 22 (7) ◽  
pp. 076803 ◽  
Author(s):  
Wen-Yu Cao ◽  
Yong-Fa He ◽  
Zhao Chen ◽  
Wei Yang ◽  
Wei-Min Du ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Emission Properties

Low-threshold-current (~85 mA) of AlGaN-based UV-B laser diode with refractive-index waveguide structure

2021 ◽  
Author(s):  
Shunya Tanaka ◽  
Yuya Ogino ◽  
Kazuki Yamada ◽  
Reo Ogura ◽  
Shohei Teramura ◽  
...  
Keyword(s):  
Refractive Index ◽  
Laser Diode ◽  
Threshold Current ◽  
Waveguide Structure ◽  
Low Threshold

Temperature Dependence of Photoresponse in p-Type GaAs/AlGaAs Multiple Quantum Wells: Theory and Experiment

1999 ◽  
Vol 607 ◽  
Author(s):  
F. Szmulowicz ◽  
A. Shen ◽  
H. C. Liu ◽  
G. J. Brown ◽  
Z. R. Wasilewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependence ◽  
Bound States ◽  
Light Hole ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Long Wavelength ◽  
Hole Level ◽  
Polarization Characteristics ◽  
P Type

AbstractThis paper describes a study of the photoresponse of long-wavelength (LWIR) and mid-infrared (MWIR) p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) as a function of temperature and QWIP parameters. Using an 8x8 envelope-function model (EFA), we designed and calculated the optical absorption of several bound-to-continuum (BC) structures, with the optimum designs corresponding to the second light hole level (LH2) coincident with the top of the well. For the temperature-dependent study, one non-optimized LWIR and one optimized MWIR samples were grown by MBE and their photoresponse and absorption characteristics measured to test the theory. The theory shows that the placement of the LH2 resonance at the top of the well for the optimized sample and the presence of light-hole-like quasi-bound states within the heavy-hole continuum for the nonoptimized sample account for their markedly different thermal and polarization characteristics. In particular, the theory predicts that, for the LWIR sample, the LH-like quasi-bound states should lead to an increased Ppolarized photoresponse as a function of temperature. Our temperature dependent photoresponse measurements corroborate most of the theoretical findings with respect to the long-wavelength threshold, shape, and polarization and temperature dependence of the spectra.

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