scholarly journals Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 942
Author(s):  
Wei Lin ◽  
Maojun Wang ◽  
Haozhe Sun ◽  
Bing Xie ◽  
Cheng P. Wen ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Carbon Doping ◽  
High Electron ◽  
Induced Current ◽  
Power Devices ◽  
Device Structure ◽  
Carbon Doped ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
State Stress

Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced current collapse effect. Two-dimensional transient simulation was carried out to show the successful suppression of buffer-induced current collapse in the SCPG-HEMTs compared with conventional HEMTs. The mechanism of suppressing dynamic on-resistance degradation by ejecting holes from the SCPG into the high resistive buffer layer after off-state stress is illustrated based on energy band diagrams. This paper contributes an innovative device structure to potentially solve the buffer-induced degradation of the dynamic on-resistance in GaN power devices.

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

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