HVPE-GROWN AlGaN/GaN HEMTs

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

Solid-State Electronics ◽

10.1016/j.sse.2013.09.001 ◽

2013 ◽

Vol 89 ◽

pp. 207-211 ◽

Cited By ~ 8

Author(s):

A. Alexewicz ◽

M. Alomari ◽

D. Maier ◽

H. Behmenburg ◽

C. Giesen ◽

...

Keyword(s):

Surface Treatment ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Thermally Stable ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Influence of gate-leakage current on drain current collapse of unpassivated GaN∕AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.1953873 ◽

2005 ◽

Vol 86 (25) ◽

pp. 253511 ◽

Cited By ~ 21

Author(s):

P. Kordoš ◽

J. Bernát ◽

M. Marso ◽

H. Lüth ◽

F. Rampazzo ◽

...

Keyword(s):

Leakage Current ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

Gate Leakage Current ◽

Gate Leakage ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.061001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 061001 ◽

Cited By ~ 7

Author(s):

Masafumi Tajima ◽

Tamotsu Hashizume

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Bias Stress ◽

Electron Mobility Transistors ◽

Current Collapse

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Current collapse suppression by SiO2 passivation in p-GaN/AlGaN/GaN enhancement-mode high electron mobility transistors

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) ◽

10.1109/iciprm.2016.7528613 ◽

2016 ◽

Author(s):

Shin-Yi Ho ◽

Chih-Hao Wang ◽

JianJang Huang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Current Collapse

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Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals ◽

10.3390/cryst10090842 ◽

2020 ◽

Vol 10 (9) ◽

pp. 842 ◽

Cited By ~ 1

Author(s):

Myoung-Jin Kang ◽

Hyun-Seop Kim ◽

Ho-Young Cha ◽

Kwang-Seok Seo

Keyword(s):

Chemical Vapor ◽

Drain Current ◽

High Electron Mobility Transistors ◽

Breakdown Field ◽

High Electron ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Passivation Process ◽

Gan On Si ◽

Sinx Film

We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

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Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.05.002 ◽

2010 ◽

Vol 54 (11) ◽

pp. 1430-1433 ◽

Cited By ~ 7

Author(s):

S. Arulkumaran ◽

G.I. Ng ◽

C.H. Lee ◽

Z.H. Liu ◽

K. Radhakrishnan ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Rf Plasma ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Recent Reliability Progress of GaN HEMT Power Amplifiers

MRS Proceedings ◽

10.1557/opl.2012.908 ◽

2012 ◽

Vol 1432 ◽

Cited By ~ 1

Author(s):

Toshihiro Ohki ◽

Masahito Kanamura ◽

Yoichi Kamada ◽

Kozo Makiyama ◽

Yusuke Inoue ◽

...

Keyword(s):

High Efficiency ◽

High Electron Mobility Transistors ◽

High Electron ◽

Device Structure ◽

Passivation Film ◽

Electron Mobility Transistors ◽

Current Collapse ◽

Specific Device ◽

Gan Hemts ◽

A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

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