scholarly journals A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Electronics ◽  
2019 ◽  
Vol 8 (3) ◽  
pp. 266
Author(s):  
Ruirui Dang ◽  
Lijie Yang ◽  
Zhihao Lv ◽  
Chunyi Song ◽  
Zhiwei Xu
Keyword(s):  
Parameter Extraction ◽  
New Method ◽  
Small Signal ◽  
Gate Bias ◽  
Large Signal ◽  
S Parameter ◽  
Proposed Model ◽  
Measurement Results ◽  
Parasitic Parameter ◽  
Signal Models

Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

scholarly journals Silicon Carbide BJT Oscillator Design Using S-Parameters

2019 ◽  
Vol 963 ◽  
pp. 674-678
Author(s):  
Muhammad Waqar Hussain ◽  
Hossein Elahipanah ◽  
Saul Rodriguez ◽  
Bengt Gunnar Malm ◽  
Ana Rusu
Keyword(s):  
Room Temperature ◽  
Design Method ◽  
Model Fitting ◽  
Simulation Models ◽  
Parameter Extraction ◽  
Extraction Process ◽  
Large Signal ◽  
S Parameter ◽  
Wafer Probing ◽  
Modelling Effort

Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 0C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 243-251 ◽  
Author(s):  
Tom K. Johansen ◽  
Matthias Rudolph ◽  
Thomas Jensen ◽  
Tomas Kraemer ◽  
Nils Weimann ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Parameter Extraction ◽  
Small Signal ◽  
Current Crowding ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Starting Point ◽  
Equivalent Circuit Parameters

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

Inaln/GaN HEMT Small-Signal Parameter Extraction

2013 ◽  
Vol 690-693 ◽  
pp. 564-568
Author(s):  
Xiao Wei Zhang ◽  
Peng Xu ◽  
Ke Jin Jia ◽  
Zhi Hong Feng ◽  
Zheng Ping Zhao
Keyword(s):  
Parameter Extraction ◽  
Test Structure ◽  
Parameter Method ◽  
Small Signal ◽  
Signal Parameter ◽  
Parasitic Inductance ◽  
Intrinsic Parameters ◽  
Gan Hemt ◽  
S Parameter ◽  
Device Technology

We use S-Parameter Methodto extract device parameter of InAlN/GaN HEMT in this paper. We find thatparasitic capacitance and parasitic inductance can be extracted in traditionaltest structure method, but do nothing about parasitic resistor. Cold parameter methodcan extract parasitic resistor efficiently, but there is greater error inparasitic capacitance and parasitic inductance extraction. We propose a methodwhich combines test structure method and cold parameter method to extract parasitic parameteraccurately. We can acquire intrinsic parameters through getting rid ofparasitism parameters, and can fitting test outcome satisfactorily. It canreflect accurately the physical characteristics of GaN HEMT devices, and givesfeedback and guidance to device technology at the same time.

Equivalent circuits for averaged description of DC-DC switch-mode power converters based on separation of variables approach

2013 ◽  
Vol 61 (3) ◽  
pp. 711-723 ◽  
Author(s):  
W. Janke
Keyword(s):  
Power Converters ◽  
Circuit Simulation ◽  
Separation Of Variables ◽  
Equivalent Circuits ◽  
Small Signal ◽  
Large Signal ◽  
Dc Power ◽  
Measurement Results ◽  
Switch Mode ◽  
Averaged Models

Abstract Large-signal and small-signal averaged models of basic switch-mode DC-DC power converters: BUCK (step-down) and BOOST (step-up) are presented. Models are derived with the separation of variables approach and have the form of equivalent circuits, suitable for a circuit simulation. Apart from equivalent circuits, small-signal transmittances of converters for CCM and DCM modes are discussed. Parasitic resistances of all components of converters are taken into account. A few examples of simulations and measurement results of selected converter characteristics are also presented. It is shown, that neglecting parasitic resistances (often met in works of other authors) may lead to serious errors in an averaged description of converters.

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