scholarly journals Measurement Uncertainty Propagation through Basic Photovoltaic Cell Models

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1029 ◽  
Author(s):  
Ivan Tolić ◽  
Mario Primorac ◽  
Kruno Miličević

This paper presents measurement uncertainty propagation through four basic photovoltaic cell models: One-diode model without resistances, with one resistance and with two resistances and two-diode model with two resistances. The expressions for the output current of all photovoltaic cell models is presented as a function of global irradiance G and temperature T. Next, the expressions for all fill factor parameters: short-circuit current, open-circuit voltage, current and voltage at the maximum power point, depending on the global irradiance G and temperature T are derived as well. For each parameter, Monte Carlo simulations to calculate the measurement uncertainty of the parameter are performed and the results were used as input values for the calculation of measurement uncertainty of fill factor. Practical calculations are performed in laboratory for renewable energy sources located on 45°32′ N and 18°44′ E. Final fill factor calculations are compared for three different module technologies.

Author(s):  
Suhad Hassan Mohsen ◽  
Luma Hafedh Abed Oneizah ◽  
Warood Kream Alaarage

In this work, a solar and flash center was created by combining two organic dyes, erythrosine and rhodamine, with completely different concentrations. Throughout the spectra of fluorescence (F) and absorbance (A), the quantitative efficiency of the dye mixture was determined. It was manufactured from a panel of epoxy containing a mixture of the two dyes using open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and solar cell efficiency (η). It was found that a 1 mm thickness of the panel works best in increasing the efficiency of the photovoltaic cell.


2013 ◽  
Vol 665 ◽  
pp. 330-335 ◽  
Author(s):  
Ripal Parmar ◽  
Dipak Sahay ◽  
R.J. Pathak ◽  
R.K. Shah

The solar cells have been used as most promising device to convert light energy into electrical energy. In this paper authors have attempted to fabricate Photoelectrochemical solar cell with semiconductor electrode using TMDCs. The Photoelectrochemical solar cells are the solar cells which convert the solar energy into electrical energy. The photoelectrochemical cells are clean and inexhaustible sources of energy. The photoelectrochemical solar cells are fabricated using WSe2crystal and electrolyte solution of 0.025M I2, 0.5M NaI, 0.5M Na2SO4. Here the WSe2crystals were grown by direct vapour transport technique. In our investigations the solar cell parameters like short circuit current (Isc) and Open circuit voltage (Voc) were measured and from that Fill factor (F.F.) and photoconversion efficiency (η) are investigated. The results obtained shows that the value of efficiency and fill factor of solar cell varies with the illumination intensities.


Author(s):  
Nur Shakina Mohd Shariff ◽  
Puteri Sarah Mohamad Saad ◽  
Mohamad Rusop Mahmood

There has been an increasing interest towards organic solar cells after the discovery of conjugated polymer and bulk-heterojunction concept. Eventhough organic solar cells are less expensive than inorganic solar cells but the power conversion energy is still considered low. The main objective of this research is to investigate the effect of the P3HT’s thickness and concentration towards the efficiency of the P3HT:Graphene solar cells. A simulation software that is specialize for photovoltaic called SCAPS is used in this research to simulate the effect on the solar cells. The solar cell’s structure will be drawn inside the simulation and the parameters for each layers is inserted. The result such as the open circuit voltage (Voc), short circuit current density (Jsc), fill factor (FF), efficiency (η), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristic will be calculated by the software and all the results will be put into one graph.


2012 ◽  
Vol 550-553 ◽  
pp. 476-479
Author(s):  
Ai Fen Wang

The three photovoltaic cells with two different anode buffer layer on the basis of Pentacene/C60 as active layer was fabicated, the effect and mechanism of anode buffer layer on performance of organic photovoltaic cell are explored. The experimental result shows transition metal oxide inserted between organic active layer and ITO could increase short circuit current and open-circuit voltage,power conversion efficiency is increased to 107%,so it is effective anode buffer material.


2021 ◽  
Vol 21 (3) ◽  
pp. 1659-1666
Author(s):  
Chia-Hsun Chen ◽  
Jiun Haw Lee ◽  
Chien-Liang Lin ◽  
Tien-Lung Chiu

A nanostructured molybdenum trioxide (MoO3) layer was successfully fabricated utilizing various deposition rates, employed as an anodic buffer layer to separate the active layer from a silver anode and modifying the anodic surface to facilitate hole transportation for top-incident organic photovoltaic (TIOPV) devices. The deposition rate and thickness of the MoO3 layer were crucial parameters for determining the surface morphology and work function, and the internal optical field distribution, respectively. These factors affected the performance of the devices in terms of their open-circuit voltage (VOC), short-circuit current density (JSC), and fill factor (FF). The baseline TIOPV device without a buffer layer had a power conversion efficiency (PCE) of only 0.47%. By contrast, with a smooth 20-nm MoO3 buffer layer fabricated using a deposition rate of 1 Å/s (which prevented problems caused by the Ag anode), another fabricated TIOPV device had substantially higher VOC, JSC and FF values, which improved the PCE by a factor of 6.2 to 2.92%. When an additional 5-nm nanostructured MoO3 layer was deposited at a deposition rate of 0.5 Å/s, the most efficient TIOPV device had an even greater PCE, a factor of 7.5 times higher at 3.53%.


2008 ◽  
Vol 1101 ◽  
Author(s):  
Chang-Wei Liu ◽  
Zingway Pei ◽  
Shu-Tong Chang ◽  
Ren-Yui Ho ◽  
Min-Wei Ho ◽  
...  

AbstractOne of the parameters that limit the efficiency of a thin film solar cell, especially the a-Si and the nc-Si solar cell is the cell thickness. Although thicker film can absorb most of the sun light, the optical generated carriers will recombination through the numerous gap states in the film that obtained lower short circuit current and fill factor. In the controversy, thinner film could not absorb enough sun light that also limit the short circuit current. In this works, we utilize nanowire structure to solve the conflict between the light absorption and the carrier transport. The designed structure has ZnO:Al nanowire array on the substrate. The p-i-n a-Si solar cell structure is grown along the surface of each ZnO: Al nanowire sequentially. Under sunlight illumination, the light is absorbed in the axis direction of the nanowire. However, the carrier transport is along the radial direction of the solar cell. Therefore, the long nanowire could absorb most of the solar light. In the mean time, the thickness of the solar cell still is thin enough for photo-generated carrier transport. The dependence of short circuit current, open circuit voltage and fill factor to the length, diameter and density of ZnO:Al nanowires were simulated.


2005 ◽  
Vol 12 (03) ◽  
pp. 343-350 ◽  
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO

The successful deposition of boron ( B )-doped p-type ( p-C:B ) and phosphorous ( P )-doped n-type ( n-C:P ) carbon ( C ) films, and fabrication of p-C:B on silicon ( Si ) substrate ( p-C:B/n-Si ) and n-C:P/p-Si cells by the technique of pulsed laser deposition (PLD) using graphite target is reported. The cells' performances are represented in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm2, 25°C). The open circuit voltage (V oc ) and short circuit current density (J sc ) for p-C:B/n-Si are observed to vary from 230–250 mV and 1.5–2.2 mA/cm2, respectively, and to vary from 215–265 mV and 7.5–10.5 mA/cm2, respectively, for n-C:P/p-Si cells. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 Bwt% shows highest energy conversion efficiency, η = 0.20%, and fill factor, FF = 45%, while, the n-C:P/p-Si cell with the amount of P by 7 Pwt% shows highest energy conversion efficiency, η = 1.14%, and fill factor, FF = 41%. The quantum efficiencies (QE) of the p-C:B/n-Si and n-C:P/p-Si cells are observed to improve with Bwt% and Pwt%, respectively. The contributions of QE are suggested to be due to photon absorption by carbon layer in the lower wavelength region (below 750 nm) and Si substrates in the higher wavelength region. The dependence of B and P content on the electrical and optical properties of the deposited films, and the photovoltaic characteristics of the respective p-C:B/n-Si and n-C:P/p-Si heterojunction photovoltaic cells, are discussed.


2005 ◽  
Vol 12 (01) ◽  
pp. 19-25 ◽  
Author(s):  
M. RUSOP ◽  
M. ADACHI ◽  
T. SOGA ◽  
T. JIMBO

Phosphorus-doped amorphous carbon (n-C:P) films were grown by r. f.-power-assisted plasma-enhanced chemical vapor deposition at room temperature using a novel solid red phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density, open circuit current voltage, fill factor and conversion efficiency along with the spectral response are reported for the fabricated carbon-based n-C:P/p-Si heterojunction solar cell that was measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm 2, 25°C). The maximum of open-circuit voltage (V oc ) and short-circuit current density (J sc ) for the cells are observed to be approximately 236 V and 7.34, mAcm 2 respectively for the n-C:P/p-Si cell grown at lower r. f. power of 100 W. The highest energy conversion efficiency (η) and fill factor (FF) were found to be approximately 0.84% and 49%, respectively. We have observed that the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.


2014 ◽  
Vol 665 ◽  
pp. 111-114 ◽  
Author(s):  
Ying Huang ◽  
Xiao Ming Shen ◽  
Xiao Feng Wei

In this paper, InAlN/Si single-heterojunction solar cells have been theoretically simulated based on wxAMPS software. The photovoltaic parameters, such as open circuit voltage, short circuit current, fill factor and conversion efficiency were investigated with changing the indium content and thickness of n-InAlN layer. Simulation results show that the optimum efficiency of InAlN/Si solar cells is 23.1% under AM 1.5G spectral illuminations, with the indium content and thickness of n-InAlN layer are 0.65 and 600nm, respectively. The simulation would contribute to design and fabricate high efficiency InAlN/Si solar cells in experiment.


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