scholarly journals Analysis and Pareto Frontier Based Tradeoff Design of an Integrated Magnetic Structure for a CLLC Resonant Converter

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1756
Author(s):  
Gang Wang ◽  
Qiyu Hu ◽  
Chunyu Xu ◽  
Bin Zhao ◽  
Xiaobao Su

This paper proposes an integrated magnetic structure for a CLLC resonant converter. With the proposed integrated magnetic structure, two resonant inductances and the transformer are integrated into one magnetic core, which improves the power density of the CLLC resonant converter. In the proposed integrated magnetic structure, two resonant inductances are decoupled with the transformer and can be adjusted by the number of turns in each inductance. Furthermore, two resonant inductances are coupled to reduce the number of turns in each inductance. As a result, the conduction loss can be reduced. The trade-off design of the integrated magnetic structure is carried out based on the Pareto optimization procedure. With the Pareto optimization procedure, both high efficiency and high-power density can be achieved. The proposed integrated magnetic structure is validated by theoretical analysis, simulations, and experiments.

2021 ◽  
Vol 11 (23) ◽  
pp. 11350
Author(s):  
Seyed Abolfazl Mortazavizadeh ◽  
Simone Palazzo ◽  
Arturo Amendola ◽  
Enzo De Santis ◽  
Dario Di Ruzza ◽  
...  

Soft switching for both primary and secondary side devices is available by using LLC converters. This resonant converter is an ideal candidate for today’s high frequency, high efficiency, and high power density applications like adapters, Uninterrupted Power Supplies (UPS), Solid State Transformers (SST), electric vehicle battery chargers, renewable energy systems, servers, and telecom systems. Using Gallium-Nitride (GaN)-based power switches in this converter merits more and more switching frequency, power density, and efficiency. Therefore, the present paper focused on GaN-based LLC resonant converters. The converter structure, operation regions, design steps, and drive system are described precisely. Then its losses are discussed, and the magnets and inductance characteristics are investigated. After that, various interleaved topologies, as a solution to improve power density and decrease current ripples, have been discussed. Also, some challenges and concerns related to GaN-based LLC converters have been reviewed. Commercially available power transistors based on various technologies, i.e., GaN HEMT, Silicon (Si) MOSFET, and Silicon Carbide (SiC) have been compared. Finally, the LLC resonant converter has been simulated by taking advantage of LTspice and GaN HEMT merits, as compared with Si MOSFETs.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rohith Mittapally ◽  
Byungjun Lee ◽  
Linxiao Zhu ◽  
Amin Reihani ◽  
Ju Won Lim ◽  
...  

AbstractThermophotovoltaic approaches that take advantage of near-field evanescent modes are being actively explored due to their potential for high-power density and high-efficiency energy conversion. However, progress towards functional near-field thermophotovoltaic devices has been limited by challenges in creating thermally robust planar emitters and photovoltaic cells designed for near-field thermal radiation. Here, we demonstrate record power densities of ~5 kW/m2 at an efficiency of 6.8%, where the efficiency of the system is defined as the ratio of the electrical power output of the PV cell to the radiative heat transfer from the emitter to the PV cell. This was accomplished by developing novel emitter devices that can sustain temperatures as high as 1270 K and positioning them into the near-field (<100 nm) of custom-fabricated InGaAs-based thin film photovoltaic cells. In addition to demonstrating efficient heat-to-electricity conversion at high power density, we report the performance of thermophotovoltaic devices across a range of emitter temperatures (~800 K–1270 K) and gap sizes (70 nm–7 µm). The methods and insights achieved in this work represent a critical step towards understanding the fundamental principles of harvesting thermal energy in the near-field.


2011 ◽  
Vol 4 (5) ◽  
pp. 052104 ◽  
Author(s):  
Di Liu ◽  
Yongqiang Ning ◽  
Yugang Zeng ◽  
Li Qin ◽  
Yun Liu ◽  
...  

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