Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device. Within this paper, we investigated the current transport mechanism in GaAsN p-i-n solar cells grown with atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE). We examined the electro-optical and structural properties of a GaAsN solar cell epitaxial structure and correlated the results with temperature-dependent current-voltage measurements and deep level transient spectroscopy findings. The analysis of J-V-T measurements carried out in a wide temperature range allows for the determination of the dominant current transport mechanism in a GaAsN-based solar cell device and assign it a nitrogen interstitial defect, the presence of which was confirmed by DLTFS investigation.

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Current Transport Mechanism of High-Performance Novel GaN MIS Diode

IEEE Electron Device Letters ◽

10.1109/led.2021.3051690 ◽

2021 ◽

Vol 42 (3) ◽

pp. 304-307

Author(s):

Tao Zhang ◽

Yanni Zhang ◽

Jincheng Zhang ◽

Xiangdong Li ◽

Yueguang Lv ◽

...

Keyword(s):

Transport Mechanism ◽

High Performance ◽

Current Transport ◽

Current Transport Mechanism ◽

Mis Diode

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Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

Australian Journal of Physics ◽

10.1071/ph930435 ◽

1993 ◽

Vol 46 (3) ◽

pp. 435

Author(s):

C Jagadish ◽

A Clark ◽

G Li ◽

CA Larson ◽

N Hauser ◽

...

Keyword(s):

Gallium Arsenide ◽

Growth Temperature ◽

Deep Level ◽

Growth Parameters ◽

Low Pressure ◽

Vapour Phase ◽

Growth Conditions ◽

Vapour Phase Epitaxy ◽

Metal Organic ◽

Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

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Temperature dependent current transport mechanism in osmium-doped perovskite yttrium manganite-based heterojunctions

Journal of Applied Physics ◽

10.1063/1.5094129 ◽

2019 ◽

Vol 125 (21) ◽

pp. 214104 ◽

Cited By ~ 4

Author(s):

F. M. Coșkun ◽

O. Polat ◽

M. Coșkun ◽

A. Turut ◽

M. Caglar ◽

...

Keyword(s):

Transport Mechanism ◽

Current Transport ◽

Temperature Dependent ◽

Current Transport Mechanism

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Current-transport mechanism in Au/V-doped PVC+TCNQ/p-Si structures

International Journal of Modern Physics B ◽

10.1142/s0217979215500769 ◽

2015 ◽

Vol 29 (13) ◽

pp. 1550076 ◽

Cited By ~ 3

Author(s):

H. Tecimer ◽

Ö. Vural ◽

A. Kaya ◽

Ş. Altındal

Keyword(s):

Temperature Coefficient ◽

Transport Mechanism ◽

Forward Bias ◽

Thermionic Emission ◽

Negative Temperature ◽

Positive Temperature ◽

Current Transport ◽

Insulator Layer ◽

Zero Bias ◽

Current Transport Mechanism

The forward and reverse bias current–voltage (I–V) characteristics of Au/V-doped polyvinyl chloride+Tetracyanoquino dimethane/porous silicon (PVC+TCNQ/p-Si) structures have been investigated in the temperature range of 160–340 K. The zero bias or apparent barrier height (BH) (Φ ap = Φ Bo ) and ideality factor (n ap = n) were found strongly temperature dependent and the value of n ap decreases, while the Φ ap increases with the increasing temperature. Also, the Φ ap versus T plot shows almost a straight line which has positive temperature coefficient and it is not in agreement with the negative temperature coefficient of ideal diode or forbidden bandgap of Si (α Si = -4.73×10-4 eV/K ). The high value of n cannot be explained only with respect to interfacial insulator layer and interface traps. In order to explain such behavior of Φ ap and n ap with temperature, Φ ap Versus q/2kT plot was drawn and the mean value of (Φ Bo ) and standard deviation (σs) values found from the slope and intercept of this plot as 1.176 eV and 0.152 V, respectively. Thus, the modified ( ln (Io/T2)-(qσs)2/2(kT)2 versus (q/kT) plot gives the Φ Bo and effective Richardson constant A* as 1.115 eV and 31.94 A ⋅(cm⋅K)-2, respectively. This value of A*( = 31.94 A⋅( cm ⋅K)-2) is very close to the theoretical value of 32 A ⋅(cm⋅K)-2 for p-Si. Therefore, the forward bias I–V–T characteristics confirmed that the current-transport mechanism (CTM) in Au/V-doped PVC+TCNQ/p-Si structures can be successfully explained in terms of the thermionic emission (TE) mechanism with a Gaussian distribution (GD) of BHs at around mean BH.

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