scholarly journals Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1736 ◽  
Author(s):  
George Christian ◽  
Menno Kappers ◽  
Fabien Massabuau ◽  
Colin Humphreys ◽  
Rachel Oliver ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Thermionic Emission ◽  
Radiative Recombination Rate ◽  
Quantum Well Structures ◽  
Si Doped

In this paper we report on the optical properties of a series of InGaN polar quantum well structures where the number of wells was 1, 3, 5, 7, 10 and 15 and which were grown with the inclusion of an InGaN Si-doped underlayer. When the number of quantum wells is low then the room temperature internal quantum efficiency can be dominated by thermionic emission from the wells. This can occur because the radiative recombination rate in InGaN polar quantum wells can be low due to the built-in electric field across the quantum well which allows the thermionic emission process to compete effectively at room temperature limiting the internal quantum efficiency. In the structures that we discuss here, the radiative recombination rate is increased due to the effects of the Si-doped underlayer which reduces the electric field across the quantum wells. This results in the effect of thermionic emission being largely eliminated to such an extent that the internal quantum efficiency at room temperature is independent of the number of quantum wells.

Efficient Luminescence from {11.2} InGaN/GaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
Mitsuru Funato ◽  
Koji Nishizuka ◽  
Yoichi Kawakami ◽  
Yukio Narukawa ◽  
Takashi Mukai
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Room Temperature ◽  
Internal Quantum Efficiency ◽  
Multiple Quantum ◽  
Photoluminescence Intensity ◽  
Growth Technique ◽  
Recombination Lifetime ◽  
Piezoelectric Fields

ABSTRACTInGaN/GaN multiple quantum wells (MQWs) with [0001], <11.2>, and <11.0> orientations have been fabricated by means of the re-growth technique on patterned GaN templates with striped geometry, normal planes of which are (0001) and {11.0}, on sapphire (0001) substrates. It was found that photoluminescence intensity of the {11.2} QW is the strongest among the three QWs, and its internal quantum efficiency was estimated to be as large as about 40% at room temperature. The radiative recombination lifetime of the {11.2} QW was about 0.39 ns at 14 K, which was 3.8 times shorter than that of conventional c-oriented QWs emitting at a similar wavelength. These findings are well explained by the high internal quantum efficiency in the {11.2} QW owing to the suppression of piezoelectric fields.

scholarly journals Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles

AIP Advances ◽  
2015 ◽  
Vol 5 (9) ◽  
pp. 097169 ◽  
Author(s):  
Daisuke Iida ◽  
Ahmed Fadil ◽  
Yuntian Chen ◽  
Yiyu Ou ◽  
Oleksii Kopylov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Ag Nanoparticles ◽  
Internal Quantum Efficiency ◽  
Efficiency Enhancement ◽  
Quantum Well Structures

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

Optical evaluation of pretreated InGaN quantum well structures

2003 ◽  
Vol 798 ◽  
Author(s):  
T. Böttcher ◽  
F. Bertram ◽  
P. Bergman ◽  
A. Ueta ◽  
J. Christen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Growth Direction ◽  
Wetting Layer ◽  
Quantum Well Structures ◽  
Room Temperature Photoluminescence ◽  
Decay Times ◽  
Wavelength Distribution ◽  
Ingan Quantum Wells

ABSTRACTIn order to optimize the quantum efficiency of InGaN quantum wells, different MOVPE growth sequences are compared using photo- and electroluminescence. In one study, the surface was pretreated with trimethylindium (TMIn) prior to the well deposition. In another study, growth interruptions were performed after the quantum well deposition to desorb segregated indium. In both cases, the room-temperature photoluminescence (PL) intensity is strongly enhanced. For the samples grown with TMIn preflow the wavelength distribution in low-temperature cathodoluminescence (CL) wavelength mappings is narrowed, which can be attributed to more homogeneous quantum wells. Furthermore, the decay times of the radiative recombination increase both at RT and 2K. A reason for this could be an improved indium profile along the growth direction or a more homogeneous In wetting layer due to the pre-wetted surface.

scholarly journals Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

2016 ◽  
Vol 13 (5-6) ◽  
pp. 248-251 ◽  
Author(s):  
George M. Christian ◽  
Simon Hammersley ◽  
Matthew J. Davies ◽  
Philip Dawson ◽  
Menno J. Kappers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Room Temperature ◽  
Quantum Well Structures

Impact of carrier diffusion on internal quantum efficiency of InGaN quantum well structures

2022 ◽  
Author(s):  
Kazimieras Nomeika ◽  
Žydrūnas Podlipskas ◽  
Mariamija Nikitina ◽  
Saulius nargelas ◽  
Gintautas Tamulaitis ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Large Set ◽  
Carrier Diffusion ◽  
Quantum Well Structures

Internal quantum efficiency (IQE) is studied in a large set of polar and non-polar InGaN/GaN quantum well structures, 57 samples in total. In search for universal factors limiting IQE, the...

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