scholarly journals Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6950
Author(s):  
Paweł Węgierek ◽  
Justyna Pastuszak
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Band Gap ◽  
Energy Levels ◽  
Silicon Crystal ◽  
Photovoltaic Cells ◽  
Intermediate Energy ◽  
Additional Energy ◽  
Energy Value ◽  
Neon Ion

The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of r = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels DE = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

scholarly journals Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

Energies ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 6708
Author(s):  
Paweł Węgierek ◽  
Justyna Pastuszak ◽  
Kamil Dziadosz ◽  
Marcin Turek
Keyword(s):  
Electrical Properties ◽  
Energy Gap ◽  
Energy Levels ◽  
Silicon Crystal ◽  
Photovoltaic Cells ◽  
Photovoltaic Cell ◽  
Additional Energy ◽  
Influence Of Substrate ◽  
Substrate Doping ◽  
Different Doses

The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne+ ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples Ta = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap Eg, it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

scholarly journals Effects of Au Nanoparticle Addition to Hole Transfer Layer in Organic Photovoltaic Cells Based on Phthalocyanines and Fullerene

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Akihiko Nagata ◽  
Takeo Oku ◽  
Tsuyoshi Akiyama ◽  
Atsushi Suzuki ◽  
Yasuhiro Yamasaki ◽  
...  
Keyword(s):  
Energy Levels ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Au Nanoparticle ◽  
Molecular Orbital Calculations ◽  
Organic Photovoltaic Cells ◽  
Transfer Layer ◽  
Hole Transfer ◽  
Transmission Electron ◽  
Conversion Efficiencies

Phthalocyanines/fullerene organic photovoltaic cells were fabricated and characterized. Effects of Au nanoparticle addition to a hole transfer layer were also investigated, and power conversion efficiencies of the photovoltaic cells were improved after blending the Au nanoparticle into PEDOT:PSS. Nanostructures of the Au nanoparticles were investigated by transmission electron microscopy and X-ray diffraction. Energy levels of molecules were calculated by molecular orbital calculations, and the nanostructures and electronic property were discussed.

scholarly journals Application of quinoline derivatives in third-generation photovoltaics

2021 ◽  
Author(s):  
Gabriela Lewinska ◽  
Jerzy Sanetra ◽  
Konstanty W. Marszalek
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Photovoltaic Cells ◽  
Third Generation ◽  
Quinoline Derivatives ◽  
Emission Layer ◽  
Light Emitting ◽  
Photovoltaic Applications ◽  
Architecture And Design

AbstractAmong many chemical compounds synthesized for third-generation photovoltaic applications, quinoline derivatives have recently gained popularity. This work reviews the latest developments in the quinoline derivatives (metal complexes) for applications in the photovoltaic cells. Their properties for photovoltaic applications are detailed: absorption spectra, energy levels, and other achievements presented by the authors. We have also outlined various methods for testing the compounds for application. Finally, we present the implementation of quinoline derivatives in photovoltaic cells. Their architecture and design are described, and also, the performance for polymer solar cells and dye-synthesized solar cells was highlighted. We have described their performance and characteristics. We have also pointed out other, non-photovoltaic applications for quinoline derivatives. It has been demonstrated and described that quinoline derivatives are good materials for the emission layer of organic light-emitting diodes (OLEDs) and are also used in transistors. The compounds are also being considered as materials for biomedical applications.

Above-Band-Gap Voltage from Oriented Bismuth Ferrite Ceramic Photovoltaic Cells

2021 ◽  
Author(s):  
Kun Yao Liang ◽  
Ye Feng Wang ◽  
Zhou Yang ◽  
Shi Peng Zhang ◽  
Shi Yao Jia ◽  
...  
Keyword(s):  
Band Gap ◽  
Bismuth Ferrite ◽  
Photovoltaic Cells

Defect annihilation-mediated enhanced activation energy of GaAs 0.979 N 0.021 -capped InAs/GaAs quantum dots by H − ion implantation

2017 ◽  
Vol 639 ◽  
pp. 73-77 ◽  
Author(s):  
Mahitosh Biswas ◽  
Sandeep Singh ◽  
Akshay Balgarkashi ◽  
Roshan L. Makkar ◽  
Anuj Bhatnagar ◽  
...  
Keyword(s):  
Activation Energy ◽  
Quantum Dots ◽  
Ion Implantation

High photovoltage achieved in low band gap polymer solar cells by adjusting energy levels of a polymer with the LUMOs of fullerene derivatives

2008 ◽  
Vol 18 (45) ◽  
pp. 5468 ◽  
Author(s):  
Fengling Zhang ◽  
Johan Bijleveld ◽  
Erik Perzon ◽  
Kristofer Tvingstedt ◽  
Sophie Barrau ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Low Band Gap ◽  
Fullerene Derivatives ◽  
Low Band Gap Polymer

scholarly journals Solution of Q-Deformed D-Dimensional Klein-Gordon Equation Kratzer Potential using Hypergeometric Method

2019 ◽  
Vol 9 (2) ◽  
pp. 163
Author(s):  
Suparmi Suparmi ◽  
Dyah Ayu Dianawati ◽  
Cari Cari
Keyword(s):  
Gordon Equation ◽  
Energy Levels ◽  
Spin Symmetry ◽  
Relativistic Energy ◽  
Dimensional Parameter ◽  
Energy Value ◽  
Quantum Numbers ◽  
Klein Gordon ◽  
Dimensional Parameters ◽  
Klein Gordon Equation

The Q-deformed D-dimensional Klein Gordon equation with Kratzer potential is solved by using Hypergeometric method in the case of exact spin symmetry. The linear radial momentum of D-dimensional Klein Gordon equation is disturbed by the presence of the quadratic radial posisiton. The Klein-Gordon D-dimensional equation is reduced to one-dimensional Schrodinger like equation with variable substitution. The solution of the D-dimensional Klein-Gordon equation is determined in the form of a general equation of the Hypergeometry function using the Kratzer potential variable and the quantum deformation variable. From this equation, relativistic energy and wave function are determined. In addition, the relativistic energy equation can be used to calculate numerical energy levels for diatomic particles (CO, NO, O2) using Matlab R2013a software. The results obtained show that the q-deformed quantum parameters, quantum numbers and dimensions affect the value of relativistic energy for zero-pin particles. The value of energy increases with increasing value of quantum number n, q-deformed parameters, and d-dimensional parameters. Of the three parameters, q-deformed parameter is the most dominant to give change in energy value; the increasing q-deformed parameter causes the energy value increases significantly compared to the d-dimensional parameter and quantum numbers n.

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