scholarly journals Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells

Energies ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 6708
Author(s):  
Paweł Węgierek ◽  
Justyna Pastuszak ◽  
Kamil Dziadosz ◽  
Marcin Turek
Keyword(s):  
Electrical Properties ◽  
Energy Gap ◽  
Energy Levels ◽  
Silicon Crystal ◽  
Photovoltaic Cells ◽  
Photovoltaic Cell ◽  
Additional Energy ◽  
Influence Of Substrate ◽  
Substrate Doping ◽  
Different Doses

The main goal of this work was to conduct a comparative analysis of the electrical properties of the silicon implanted with neon ions, depending on the dose of ions and the type of substrate doping, for the possibility of generating additional energy levels by ion implantation in terms of improving the efficiency of photovoltaic cells made on its basis. The article presents the results of research on the capacitance and conductance of silicon samples doped with boron and phosphorus, the structure of which was modified in the implantation process with Ne+ ions with energy E = 100 keV and different doses. The analysis of changes in electrical properties recorded at the annealing temperature of the samples Ta = 298 K, 473 K, 598 K, 673 K, and 873 K, concerned the influence of the test temperature in the range from 203 K to 373 K, as well as the frequency f from 100 Hz to 10 MHz, and voltage U from 0.25 V to 2 V. It was possible to detect intermediate bands in the tested samples and determine their position in the band gap by estimating the activation energy value. By means of implantation, it is possible to modify the width of the silicon energy gap, the value of which directly affects the efficiency of the photovoltaic cell made on its basis. By introducing appropriate defects into the silicon crystal lattice, contributing to a change in the value of the energy gap Eg, it is possible to increase the efficiency of the solar cell. On the basis of the obtained results, it can be seen that the highest activation energies are achieved for samples doped with phosphorus.

scholarly journals Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6950
Author(s):  
Paweł Węgierek ◽  
Justyna Pastuszak
Keyword(s):  
Activation Energy ◽  
Ion Implantation ◽  
Band Gap ◽  
Energy Levels ◽  
Silicon Crystal ◽  
Photovoltaic Cells ◽  
Intermediate Energy ◽  
Additional Energy ◽  
Energy Value ◽  
Neon Ion

The aim of the work is to present the possibility of generating intermediate levels in the band gap of p-type silicon doped with boron by using neon ion implantation in the aspect of improving the efficiency of photovoltaic cells made on its basis. The work contains an analysis of the influence of the dose of neon ions on the activation energy value of additional energy levels. The article presents the results of measurements of the capacitance and conductance of silicon samples with a resistivity of r = 0.4 Ω cm doped with boron, the structure of which was modified in the implantation process with Ne+ ions with the energy E = 100 keV and three different doses of D = 4.0 × 1013 cm−2, 2.2 × 1014 cm−2 and 4.0 × 1014 cm−2, respectively. Activation energies were determined on the basis of Arrhenius curves ln(et(Tp)/Tp2) = f(1/kTp), where Tp is in the range from 200 K to 373 K and represents the sample temperature during the measurements, which were carried out for the frequencies fp in the range from 1 kHz to 10 MHz. In the tested samples, additional energy levels were identified and their position in the semiconductor band gap was determined by estimating the activation energy value. The conducted analysis showed that by introducing appropriate defects in the silicon crystal lattice as a result of neon ion implantation with a specific dose and energy, it is possible to generate additional energy levels DE = 0.46 eV in the semiconductor band gap, the presence of which directly affects the efficiency of photovoltaic cells made on the basis of such a modified material.

Formation of high temperature phase in flash-evaporated SnSe films

1990 ◽  
Vol 48 (4) ◽  
pp. 698-699
Author(s):  
J.P.S. Hanjra
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Energy Gap ◽  
Dominant Role ◽  
Fine Powder ◽  
High Temperature Phase ◽  
Temperature Phase ◽  
Water Mixture ◽  
Flash Evaporation ◽  
Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

scholarly journals Effects of Au Nanoparticle Addition to Hole Transfer Layer in Organic Photovoltaic Cells Based on Phthalocyanines and Fullerene

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
Akihiko Nagata ◽  
Takeo Oku ◽  
Tsuyoshi Akiyama ◽  
Atsushi Suzuki ◽  
Yasuhiro Yamasaki ◽  
...  
Keyword(s):  
Energy Levels ◽  
Photovoltaic Cells ◽  
Organic Photovoltaic ◽  
Au Nanoparticle ◽  
Molecular Orbital Calculations ◽  
Organic Photovoltaic Cells ◽  
Transfer Layer ◽  
Hole Transfer ◽  
Transmission Electron ◽  
Conversion Efficiencies

Phthalocyanines/fullerene organic photovoltaic cells were fabricated and characterized. Effects of Au nanoparticle addition to a hole transfer layer were also investigated, and power conversion efficiencies of the photovoltaic cells were improved after blending the Au nanoparticle into PEDOT:PSS. Nanostructures of the Au nanoparticles were investigated by transmission electron microscopy and X-ray diffraction. Energy levels of molecules were calculated by molecular orbital calculations, and the nanostructures and electronic property were discussed.

scholarly journals Application of quinoline derivatives in third-generation photovoltaics

2021 ◽  
Author(s):  
Gabriela Lewinska ◽  
Jerzy Sanetra ◽  
Konstanty W. Marszalek
Keyword(s):  
Solar Cells ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Photovoltaic Cells ◽  
Third Generation ◽  
Quinoline Derivatives ◽  
Emission Layer ◽  
Light Emitting ◽  
Photovoltaic Applications ◽  
Architecture And Design

AbstractAmong many chemical compounds synthesized for third-generation photovoltaic applications, quinoline derivatives have recently gained popularity. This work reviews the latest developments in the quinoline derivatives (metal complexes) for applications in the photovoltaic cells. Their properties for photovoltaic applications are detailed: absorption spectra, energy levels, and other achievements presented by the authors. We have also outlined various methods for testing the compounds for application. Finally, we present the implementation of quinoline derivatives in photovoltaic cells. Their architecture and design are described, and also, the performance for polymer solar cells and dye-synthesized solar cells was highlighted. We have described their performance and characteristics. We have also pointed out other, non-photovoltaic applications for quinoline derivatives. It has been demonstrated and described that quinoline derivatives are good materials for the emission layer of organic light-emitting diodes (OLEDs) and are also used in transistors. The compounds are also being considered as materials for biomedical applications.

Research on Characteristics of the Photovoltaic Cells Integrated on Chip

2014 ◽  
Vol 525 ◽  
pp. 287-291
Author(s):  
Li Xian Xiao ◽  
Yong Tai He ◽  
Yue Hong Peng ◽  
Jin Hao Liu
Keyword(s):  
Conversion Efficiency ◽  
Doping Concentration ◽  
Photovoltaic Cells ◽  
Influence Factors ◽  
Device Layer ◽  
Fabrication Technology ◽  
Junction Depth ◽  
On Chip ◽  
Substrate Doping ◽  
Emitter Junction

The influence factors of Photovoltaic (PV) cells characteristics integrated on chip were analyzed based on the fabrication process and the structure of the PV cells and CMOS devices. The results show the substrate doping concentration, the emitter doping concentration, the emitter junction depth and the thickness of device layer directly determine the conversion efficiency, open voltage and the light-generated current of photovoltaic cells. In the emitter doping concentration range of 1×1019/cm3 to 1×1021/cm3 and the substrate doping concentration range of 1.0×1015/cm3 to 1.0×1017/cm3, the Photovoltaic cells have batter conversion characteristics. The PV cells were designed based on the analysis results in PC1D, and the conversion efficiency is 9.43%. The Photovoltaic cells and the CMOS devices have batter fabrication technology compatibility integrated on chip.

scholarly journals Application Examples for the Different Measurement Modes of Electrical Properties of the Solar Cells

2014 ◽  
Vol 59 (1) ◽  
pp. 247-252 ◽  
Author(s):  
M. Musztyfaga-Staszuk ◽  
L.A. Dobrzanski ◽  
S. Rusz ◽  
M. Staszuk
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Sheet Resistance ◽  
Cross Sections ◽  
Standard Technique ◽  
Photovoltaic Cell ◽  
Metal Resistance ◽  
Silicon Wafers ◽  
Formation Technique

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

Photovoltaic Cell Test System Based on Dual-Core Processors

2011 ◽  
Vol 121-126 ◽  
pp. 4229-4233
Author(s):  
Ping Chuan Zhang ◽  
Yun Long Kong ◽  
Hang Sen Zhang
Keyword(s):  
High Performance ◽  
Fill Factor ◽  
Photovoltaic Cells ◽  
Photovoltaic Cell ◽  
Test System ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Data Processing Center ◽  
Cell Test ◽  
Dual Core

This paper design an intelligent photovoltaic cell test system. The high performance dual-core 16bits SPCE061A microprocessors are used as control and data processing center. The powerful data operation ability of SPCE061A makes it to carry out software filter for measured data and enhances testing precision. the experiments demonstrated the test system can measure the characteristic parameters of photovoltaic cells: open voltage, current, the fill factor and photoelectric conversion efficiency, draw photovoltaic cells I-V curve, find the best working points , and also have the characteristics of miniaturization and intelligent.

Temperature/Doping-Dependency of the Electrical Properties of the Nickel Doped Copper Oxide Thin Films

2021 ◽  
Vol 16 (2) ◽  
pp. 163-169
Author(s):  
Alaa Y. Mahmoud ◽  
Wafa A. Alghameeti ◽  
Fatmah S. Bahabri
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermal Activation ◽  
Doping Concentration ◽  
Energy Gap ◽  
Cupric Oxide ◽  
Electrical Energy ◽  
Thermal Activation Energy ◽  
Ni Doping

The electrical properties of the Nickel doped cupric oxide Ni-CuO thin films with various doping concentrations of Ni (0, 20, 30, 70, and 80%) are investigated at two different annealing temperatures; 200 and 400 °C. The electrical properties of the films; namely thermal activation energy and electrical energy gap are calculated and compared. We find that for the non-annealed Ni-CuO films, both thermal activation energy and electrical energy gap are decreased by increasing the doping concentration, while for the annealed films, the increase in the Ni doping results in the increase in thermal activation energy and electrical energy gap for most of the Ni-CuO films. We also observe that for a particular concentration, the annealing at 200 °C produces lower thermal activation energy and electrical energy gap than the annealing at 400 °C. We obtained two values of the activation energy varying from -5.52 to -0.51 eV and from 0.49 to 3.36 eV, respectively, for the annealing at 200 and 400 °C. We also obtained two values of the electrical bandgap varying from -11.05 to -1.03 eV and from 0.97 to 6.71 eV, respectively, for the annealing at 200 and 400 °C. It is also noticeable that the increase in the doping concentration reduces the activation energy, and hence the electrical bandgap energies.

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