scholarly journals Ferromagnetic Resonance Studies in Magnetic Nanosystems

2021 ◽  
Vol 7 (9) ◽  
pp. 126
Author(s):  
David S. Schmool ◽  
Daniel Markó ◽  
Ko-Wei Lin ◽  
Aurelio Hierro-Rodríguez ◽  
Carlos Quirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Magnetic Layer ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetization Dynamics ◽  
Microwave Spectrometer ◽  
Depth Analysis ◽  
Ferromagnetic Layers ◽  
Recent Developments ◽  
Magnetic Spin

Ferromagnetic resonance is a powerful method for the study of all classes of magnetic materials. The experimental technique has been used for many decades and is based on the excitation of a magnetic spin system via a microwave (or rf) field. While earlier methods were based on the use of a microwave spectrometer, more recent developments have seen the widespread use of the vector network analyzer (VNA), which provides a more versatile measurement system at almost comparable sensitivity. While the former is based on a fixed frequency of excitation, the VNA enables frequency-dependent measurements, allowing more in-depth analysis. We have applied this technique to the study of nanostructured thin films or nanodots and coupled magnetic layer systems comprised of exchange-coupled ferromagnetic layers with in-plane and perpendicular magnetic anisotropies. In the first system, we have investigated the magnetization dynamics in Co/Ag bilayers and nanodots. In the second system, we have studied Permalloy (Ni80Fe20, hereafter Py) thin films coupled via an intervening Al layer of varying thickness to a NdCo film which has perpendicular magnetic anisotropy.

Investigations of the Magnetic Perpendicular Exchange Bias in L10 FePt/NiO Bilayer Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (47-48) ◽  
pp. 2893-2898
Author(s):  
Zachary B. Leuty ◽  
Robert A. Mayanovic
Keyword(s):  
Thin Films ◽  
Exchange Bias ◽  
Giant Magnetoresistance ◽  
Magnetic Layer ◽  
Ferromagnetic Layer ◽  
Random Access ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetic Sensors ◽  
Magnetic Storage ◽  
Cross Sectional

ABSTRACTWe report on the exploration of perpendicular exchange bias in iron platinum/nickel oxide (FePt/NiO) bilayer thin films grown using pulsed laser deposition (PLD) on MgO (100) substrates. Exchange bias is an important property for giant magnetoresistance, and, as such has promise for applications in spin valves, magnetic sensors and magnetic random access memory. The magnetic L10 phase of FePt is known for having high perpendicular magnetic anisotropy, tunable coercivity/grain size and large magnetic storage density. The FePt layer was first deposited directly on MgO, followed by the deposition of the NiO layer on top of the FePt layer. The coercivity of the L10 FePt layer was tuned during growth to form a hard or soft magnetic layer. The FePt/NiO thin films grown for this study exhibit perpendicular exchange bias at 5K, as quantified using our SQUID measurements. XRD confirms parallel plane ordering between the MgO (200), FePt (002) and NiO (111) atomic planes while cross sectional TEM confirms the epitaxial growth of L10-FePt(001)<100>//MgO(100)<001> and the preferential growth of NiO on top of the FePt. Films of only FePt were grown to examine the surface architecture of the ferromagnetic layer and thus the interface of the FePt/NiO bilayer. The results from our XRD, TEM and magnetometry characterization of the FePt films and FePt/NiO bilayer thin films will be discussed.

scholarly journals Magnetization Dynamics and Damping for L10-FePd Thin Films with Perpendicular Magnetic Anisotropy

2015 ◽  
Vol 39 (2) ◽  
pp. 57-61 ◽  
Author(s):  
S. Iihama ◽  
M. Khan ◽  
H. Naganuma ◽  
M. Oogane ◽  
T. Miyazaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Magnetization Dynamics

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Effect of strain-induced anisotropy on magnetization dynamics in Y3Fe5O12 films recrystallized on a lattice-mismatched substrate

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Adam Krysztofik ◽  
Sevgi Özoğlu ◽  
Robert D. McMichael ◽  
Emerson Coy
Keyword(s):  
Dispersion Model ◽  
Perpendicular Magnetic Anisotropy ◽  
Negative Slope ◽  
Recrystallization Process ◽  
Induced Anisotropy ◽  
Magnetization Dynamics ◽  
Unexpected Formation ◽  
Lattice Matched ◽  
Ferromagnetic Resonance Linewidth ◽  
Lattice Mismatched Substrate

AbstractWe report on the correlation of structural and magnetic properties of Y3Fe5O12 (YIG) films deposited on Y3Al5O12 substrates using pulsed laser deposition. The recrystallization process leads to an unexpected formation of interfacial tensile strain and consequently strain-induced anisotropy contributing to the perpendicular magnetic anisotropy. The ferromagnetic resonance linewidth of YIG is significantly increased in comparison to a film on a lattice-matched Gd3Ga5O12 substrate. Notably, the linewidth dependency on frequency has a negative slope. The linewidth behavior is explained with the proposed anisotropy dispersion model.

scholarly journals Buffer layer engineering of L10 FePd thin films with large perpendicular magnetic anisotropy

AIP Advances ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 025106
Author(s):  
Xinjun Wang ◽  
Sergiy Krylyuk ◽  
Daniel Josell ◽  
Delin Zhang ◽  
Deyuan Lyu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Perpendicular Magnetic Anisotropy

scholarly journals Fabrication and broadband ferromagnetic resonance studies of freestanding polycrystalline yttrium iron garnet thin films

APL Materials ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 061105
Author(s):  
Lei Zhang ◽  
Dainan Zhang ◽  
Lichuan Jin ◽  
Bo Liu ◽  
Hao Meng ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Yttrium Iron Garnet ◽  
Yttrium Iron ◽  
Iron Garnet

scholarly journals Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnet

2017 ◽  
Vol 1 (7) ◽  
Author(s):  
Irene Lucas ◽  
Pilar Jiménez-Cavero ◽  
J. M. Vila-Fungueiriño ◽  
Cesar Magén ◽  
Soraya Sangiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferromagnetic Resonance ◽  
Yttrium Iron Garnet ◽  
Epitaxial Thin Films ◽  
Chemical Solution ◽  
Solution Synthesis ◽  
Yttrium Iron ◽  
Iron Garnet

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

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