scholarly journals Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Membranes ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 848
Author(s):  
Chong-Rong Huang ◽  
Hsien-Chin Chiu ◽  
Chia-Hao Liu ◽  
Hsiang-Chun Wang ◽  
Hsuan-Ling Kao ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
High Heat ◽  
Organic Chemical ◽  
High Electron ◽  
Characteristic Analysis ◽  
Gan Hemt ◽  
Metal Organic ◽  
Source Current

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal conductivity of the QST substrate. Thermal imaging analysis indicated that the temperature variation of the GaN on the QST device was 4.5 °C and that of the GaN on the Si device was 9.2 °C at a drain-to-source current (IDS) of 300 mA/mm following 50 s of operation. Compared with the GaN HEMT on the Si device, the GaN on the QST device exhibited a lower IDS degradation at high temperatures (17.5% at 400 K). The QST substrate is suitable for employment in different temperature environments because of its high thermal stability.

Epitaxial Growth of InAlN/GaN Heterostructures on Silicon Substrates in a Single Wafer Rotating Disk MOCVD Reactor

MRS Advances ◽  
2017 ◽  
Vol 2 (5) ◽  
pp. 329-334 ◽  
Author(s):  
Jing Lu ◽  
Jie Su ◽  
Ronald Arif ◽  
George D. Papasouliotis ◽  
Ajit Paranjpe
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Rotating Disk ◽  
High Electron Mobility Transistor ◽  
Xrd Analysis ◽  
Structural Quality ◽  
Organic Chemical ◽  
High Electron ◽  
Mocvd Reactor ◽  
Metal Organic

ABSTRACTInAlN films and InAlN/GaN high electron mobility transistor (HEMT) structures were demonstrated on 150mm <111> Si using Veeco’s Propel single wafer metal-organic chemical vapor deposition (MOCVD) system. Smooth surfaces with root mean square (rms) roughness of 0.68 nm were observed in a 5x5 μm2 atomic force microscope (AFM) scan. X-ray diffraction (XRD) analysis shows well-defined layer peaks and fringes, indicating good structural quality and abrupt layer interfaces. Thickness uniformity of InAlN is 0.87%, 1σ, for a 7-point XRD measurement across the 150 mm wafer. Secondary ion mass spectrometry (SIMS) analysis confirms the uniform indium depth profile and the presence of abrupt layer interfaces. Negligible Ga (< 100 ppm, atomic) incorporation was detected in the InAlN bulk film. Film sheet resistance of 230Ω/sq, charge of 2.1×1013/cm2, and mobility of 1270 cm2/V.s were measured on a prototypical InAlN/GaN HEMT structure comprising a 10 nm-thick, 17% indium, InAlN barrier.

MOCVD of GaN-based HEMT structures on 8 inch silicon substrates

2015 ◽  
Vol 1736 ◽  
Author(s):  
Oleg Laboutin ◽  
Chien-Fong Lo ◽  
Chen-Kai Kao ◽  
Kevin O’Connor ◽  
Wayne Johnson ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Ex Situ ◽  
Organic Chemical ◽  
Silicon Substrates ◽  
High Electron ◽  
High Electron Mobility ◽  
Metal Organic ◽  
Device Properties

ABSTRACTMetal organic chemical vapor deposition, as well as material and basic device properties of nitride-based high electron mobility transistor structures on (111) silicon substrates varying in diameter from 4 to 8 inch were studied using in-situ and ex-situ characterization techniques. All substrates used for the growth of the nitride structures in this study were of SEMI standard thicknesses. The total thickness of the nitride structures was in the range of 1.5 – 5 µm. It is reported that nitride structures can be grown on 4, 6 and 8 inch diameter substrates with very similar post-growth wafer shape, material and device characteristics. It is also shown that their crystal quality, 2DEG transport properties and isolation blocking voltages can be improved by increasing nitride structure thickness while maintaining post-growth wafer bow and warp less than 50 µm. The maximum thickness of nitride structures that can be successfully grown on 8 inch diameter SEMI standard substrates seems to be limited to about 4.5 µm due to plastic deformation of Si. Blocking voltages of more than 700 V were achieved using 4.5 µm thick nitride-based high electron mobility transistor structures grown on 8 inch Si substrate.

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