scholarly journals Route to Intelligent Imaging Reconstruction via Terahertz Nonlinear Ghost Imaging

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 521
Author(s):  
Juan S. Totero Gongora ◽  
Luana Olivieri ◽  
Luke Peters ◽  
Jacob Tunesi ◽  
Vittorio Cecconi ◽  
...  

Terahertz (THz) imaging is a rapidly emerging field, thanks to many potential applications in diagnostics, manufacturing, medicine and material characterisation. However, the relatively coarse resolution stemming from the large wavelength limits the deployment of THz imaging in micro- and nano-technologies, keeping its potential benefits out-of-reach in many practical scenarios and devices. In this context, single-pixel techniques are a promising alternative to imaging arrays, in particular when targeting subwavelength resolutions. In this work, we discuss the key advantages and practical challenges in the implementation of time-resolved nonlinear ghost imaging (TIMING), an imaging technique combining nonlinear THz generation with time-resolved time-domain spectroscopy detection. We numerically demonstrate the high-resolution reconstruction of semi-transparent samples, and we show how the Walsh–Hadamard reconstruction scheme can be optimised to significantly reduce the reconstruction time. We also discuss how, in sharp contrast with traditional intensity-based ghost imaging, the field detection at the heart of TIMING enables high-fidelity image reconstruction via low numerical-aperture detection. Even more striking—and to the best of our knowledge, an issue never tackled before—the general concept of “resolution” of the imaging system as the “smallest feature discernible” appears to be not well suited to describing the fidelity limits of nonlinear ghost-imaging systems. Our results suggest that the drop in reconstruction accuracy stemming from non-ideal detection conditions is complex and not driven by the attenuation of high-frequency spatial components (i.e., blurring) as in standard imaging. On the technological side, we further show how achieving efficient optical-to-terahertz conversion in extremely short propagation lengths is crucial regarding imaging performance, and we propose low-bandgap semiconductors as a practical framework to obtain THz emission from quasi-2D structures, i.e., structure in which the interaction occurs on a deeply subwavelength scale. Our results establish a comprehensive theoretical and experimental framework for the development of a new generation of terahertz hyperspectral imaging devices.

2021 ◽  
Vol 22 (9) ◽  
pp. 4803
Author(s):  
Eduardo Gomez ◽  
Ichiro Hisaki ◽  
Abderrazzak Douhal

Hydrogen-bonded organic frameworks (HOFs) are the focus of intense scientific research due their potential applications in science and technology. Here, we report on the synthesis, characterization, and photobehavior of a new HOF (T12F-1(124TCB)) based on a dehydrobenzoannulene derivative containing fluorine atoms (T12F-COOH). This HOF exhibits a 2D porous sheet, which is hexagonally networked via H-bonds between the carboxylic groups, and has an interlayers distance (4.3 Å) that is longer than that of a typical π–π interaction. The presence of the fluorine atoms in the DBA molecular units largely increases the emission quantum yield in DMF (0.33, T12F-COOH) when compared to the parent compound (0.02, T12-COOH). The time-resolved dynamics of T12F-COOH in DMF is governed by the emission from a locally excited state (S1, ~ 0.4 ns), a charge-transfer state (S1(CT), ~ 2 ns), and a room temperature emissive triplet state (T1, ~ 20 ns), in addition to a non-emissive triplet structure with a charge-transfer character (T1(CT), τ = 0.75 µs). We also report on the results using T12F-ester. Interestingly, FLIM experiments on single crystals unravel that the emission lifetimes of the crystalline HOF are almost twice those of the amorphous ones or the solid T12F-ester sample. This shows the relevance of the H-bonds in the photodynamics of the HOF and provides a strong basis for further development and study of HOFs based on DBAs for potential applications in photonics.


2014 ◽  
Vol 70 (a1) ◽  
pp. C776-C776 ◽  
Author(s):  
Elzbieta Trzop ◽  
Bertrand Fournier ◽  
Katarzyna Jarzembska ◽  
Jesse Sokolow ◽  
Radoslaw Kaminski ◽  
...  

Thanks to their potential applications as light-emitting devices, chemical sensors and dye-sensitized solar cells, heteroleptic copper (I) complexes have been extensively studied. Cu(DPPE)(DMP)·PF6(dppe= 1,2-bis(diphenylphosphino)ethane; dmp = 2,9-dimethyl-1,10-phenanthroline) crystallizes in the monoclinic system, P21/c, with two independent molecules in the asymmetric unit. Previous studies on this system [1,2] show strong temperature-dependent emission. The complex was studied at 90K under 355nm laser excitation. At this temperature, the luminescence decay for Cu(DPPE)(DMP)·PF6is biexponential with lifetimes of ~3μs and ~28μs. Two time-resolved X-ray diffraction techniques were applied for studies: (1) a Laue technique at BioCARS ID-14 beamline at the Advanced Photon Source, and (2) monochromatic diffraction at a newly constructed in-house pump-probe monochromatic facility at the University at Buffalo. Structural changes determined with the two methods are in qualitative agreement; discrepancies in position of the Cu and P atoms were observed. The molecular distortions were smaller than those determined at 16K in the earlier synchrotron study by Vorontsov et al. [2]. Photodeformation maps (see Figure below), in which the increase in temperature on photoexcitation has been eliminated, clearly illustrate the photoinduced atomic shifts for both data sets. Results will be compared with those obtained for other studied heteroleptic copper (I) complexes, for instance Cu[(1,10-phenanthroline-N,N′) bis(triphenylphosphine)]·BF4[3]. The in-house pump-probe facility is discussed by Radoslaw Kaminski at this meeting. Research funded by the National Science Foundation (CHE1213223). BioCARS Sector 14 at APS is supported by NIH (RR007707). The Advanced Photon Source is funded by the Office of Basic Energy Sciences, U.S. Department of Energy, (W-31-109-ENG-38). KNJ is supported by the Polish Ministry of Science and Higher Education through the "Mobility Plus" program.


MRS Bulletin ◽  
1997 ◽  
Vol 22 (6) ◽  
pp. 31-38 ◽  
Author(s):  
Yang Yang

Electroluminescence (EL) is the emission of light generated from the radiative recombination of electrons and holes electrically injected into a luminescent semiconductor. Conventional EL devices are made of inorganic direct-bandgap semiconductors, such as GaAs and InGaAs. Recently EL devices based on conjugated organic small molecules and polymers have attracted increasing attention due to easy fabrication of large areas, unlimited choice of colors, and mechanical flexibility. Potential applications of these organic/polymeric EL devices include backlights for displays, alphanumeric displays, and high-density information displays.Electroluminescence from an organic material was first demonstrated in the 1960s on anthracene crystals by Pope et al. at New York University. Subsequently several other groups also observed this phenomenon in organic crystals and thin films. These organic EL devices had high operating voltages and low quantum efficiency. Consequently they did not attract much attention. In 1987 a breakthrough was made by Tang and VanSlyke at Eastman Kodak who found that by using multilayers of sublimated organic molecules, the operating voltage of the organic EL devices was dramatically reduced and the quantum efficiency was significantly enhanced. This discovery touched off a flurry of research activity, especially in Japan. The Japanese researchers, as welt as the group at Kodak, have since improved the device efficiency and lifetime to meet commercial requirements. This progress is reviewed by Tsutsui in this issue.


2014 ◽  
Vol 486 ◽  
pp. 012027 ◽  
Author(s):  
Artem N Perov ◽  
Kirill I Zaytsev ◽  
Irina N Fokina ◽  
Valeriy E Karasik ◽  
Egor V Yakovlev ◽  
...  
Keyword(s):  

2017 ◽  
Vol 62 (5) ◽  
pp. 1905-1919 ◽  
Author(s):  
K-W Jee ◽  
R Zhang ◽  
E H Bentefour ◽  
P J Doolan ◽  
E Cascio ◽  
...  

1993 ◽  
Vol 07 (06) ◽  
pp. 331-353 ◽  
Author(s):  
C. CHIA ◽  
OTTO F. SANKEY ◽  
K. T. TSEN

We present a comprehensive theory for time-resolved Raman scattering from non-equilibrium electrons in direct bandgap semiconductors. Specifically, we include (1) the effects of probing with ultrashort laser pulse: (2) the effects of finite carrier collision time; (3) the effects of band structure; and (4) the effects of damping in the optical transition, in the calculations of Raman scattering cross section. Both elastic and inelastic scattering processes are taken into account in formulating the effects of carrier collision time. The effects of damping in the optical transitions have to be considered for the experimental condition of probing with above-bandgap laser excitations even if under some circumstances they do not drastically change the lineshape of the single-particle-scattering spectrum due to spin-density fluctuations.


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