scholarly journals Progresses in Synthesis and Application of SiC Films: From CVD to ALD and from MEMS to NEMS

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 799 ◽  
Author(s):  
Mariana Fraga ◽  
Rodrigo Pessoa
Keyword(s):  
Low Temperature ◽  
Low Cost ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Nanoelectromechanical Systems ◽  
Large Area ◽  
Scientific Publications ◽  
Continuous Growth ◽  
Layer Deposition ◽  
Sic Films

A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

scholarly journals Growth of 3C-SiC Films on Si (111) and Sapphire (0001) Substrates by MOCVD

2012 ◽  
Vol 15 (1) ◽  
pp. 25 ◽  
Author(s):  
R. Beisenov ◽  
R. Ebrahim ◽  
Z.A. Mansurov ◽  
S.Zh. Tokmoldin ◽  
B.Z. Mansurov ◽  
...  
Keyword(s):  
Surface Composition ◽  
Low Cost ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Large Area ◽  
Afm Analysis ◽  
Gas Detector ◽  
Metal Organic ◽  
Alternative Processes ◽  
Sic Films

Thick silicon carbide films were grown on sapphire (0001) and silicon (111) substrates using metal organic chemical vapor deposition (MOCVD). Diethylmethylsilane (DEMS) has been used as a single precursor, which contain Si and C atoms in the same molecule, without any carrier or bubbler gas. Atomic structure, surface composition and morphology have been investigated by XRD, AES, SEM and AFM analysis. SiC films of 5-7 micron thickness were grown at a rate of ~ 40 nm/min on sapphire (0001) and Si (111) substrates. The films grown at low temperature (850 ºC and 900 ºC) on both substrates show crystalline 3C-SiC in the (111) orientation. XRD results show that the orientation of the crystal structure does not depend of the substrate orientation AFM pictures of SiC films grown on sapphire (0001) exhibit more crystalline order as compared to films grown on the Si (111) substrates. AES of the grown films shows that in both cases the Si peak intensity is greater than that of carbon. This work shows promise for the development of alternative processes for developing low cost, large area substrates for application to IIInitrides LED and UV photodetector fabrication and also for gas detector application.

Low-temperature plasma enhanced atomic layer deposition of large area HfS2 nanocrystal thin films

2020 ◽  
Vol 29 (3) ◽  
pp. 038102 ◽  
Author(s):  
Ailing Chang ◽  
Yichen Mao ◽  
Zhiwei Huang ◽  
Haiyang Hong ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Plasma ◽  
Large Area ◽  
Temperature Plasma ◽  
Layer Deposition

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

2007 ◽  
Vol 124-126 ◽  
pp. 247-250 ◽  
Author(s):  
Won Jun Lee ◽  
Min Ho Chun ◽  
Kwang Su Cheong ◽  
Kwang Chol Park ◽  
Chong Ook Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Sio2 Films ◽  
Layer Deposition ◽  
Better Than

SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.

scholarly journals Synthesis of few-layer 2H-MoSe2 thin films with wafer-level homogeneity for high-performance photodetector

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1959-1969 ◽  
Author(s):  
Tian-Jun Dai ◽  
Yu-Chen Liu ◽  
Xu-Dong Fan ◽  
Xing-Zhao Liu ◽  
Dan Xie ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
Deep Understanding ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Fast Response ◽  
Wafer Level ◽  
Large Area ◽  
Carrier Recombination ◽  
Layer Deposition

AbstractThe unique structural and physical properties of two-dimensional (2D) atomic layer semiconductors render them promising candidates for electronic or optoelectronic devices. However, the lack of efficient and stable approaches to synthesize large-area thin films with excellent uniformity hinders their realistic applications. In this work, we reported a method involving atomic layer deposition and a chemical vapor deposition chamber to produce few-layer 2H-MoSe2 thin films with wafer-level uniformity. The reduction of MoO3 was found indispensable for the successful synthesis of MoSe2 films due to the low vaporization temperature. Moreover, a metal-semiconductor-metal photodetector (PD) was fabricated and investigated systematically. We extracted an ultrahigh photoresponsivity approaching 101 A/W with concomitantly high external quantum efficiency up to 19,668% due to the produced gain arising from the holes trapped at the metal/MoSe2 interface, the band tail state contribution, and the photogating effect. A fast response time of 22 ms was observed and attributed to effective nonequilibrium carrier recombination. Additionally, the ultrahigh photoresponsivity and low dark current that originated from Schottky barrier resulted in a record-high specific detectivity of up to 2×1013 Jones for 2D MoSe2/MoS2 PDs. Our findings revealed a pathway for the development of high-performance PDs based on 2D MoSe2 that are inexpensive, large area, and suitable for mass production and contribute to a deep understanding of the photoconductivity mechanisms in atomically thin MoSe2. We anticipate that these results are generalizable to other layer semiconductors as well.

Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS2: large area, thickness control and tuneable morphology

Nanoscale ◽  
2018 ◽  
Vol 10 (18) ◽  
pp. 8615-8627 ◽  
Author(s):  
Akhil Sharma ◽  
Marcel A. Verheijen ◽  
Longfei Wu ◽  
Saurabh Karwal ◽  
Vincent Vandalon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Process ◽  
Low Temperature Plasma ◽  
Large Area ◽  
High Quality ◽  
Temperature Plasma ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

A low-temperature plasma enhanced atomic layer deposition process is demonstrated to synthesize high quality 2-D MoS2 films with tuneable morphology.

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