scholarly journals ZnO@TiO2 Core Shell Nanorod Arrays with Tailored Structural, Electrical, and Optical Properties for Photovoltaic Application

Molecules ◽  
2019 ◽  
Vol 24 (21) ◽  
pp. 3965 ◽  
Author(s):  
Ivana Panžić ◽  
Krunoslav Juraić ◽  
Nikša Krstulović ◽  
Ana Šantić ◽  
Domagoj Belić ◽  
...  
Keyword(s):  
Optical Properties ◽  
Zno Nanorods ◽  
Chemical Deposition ◽  
Electrical And Optical Properties ◽  
Preparation Methods ◽  
Nanostructured Tio2 ◽  
Photovoltaic Application ◽  
Visible Part ◽  
Structure Morphology ◽  
Tio2 Shell

ZnO has prominent electron transport and optical properties, beneficial for photovoltaic application, but its surface is prone to the formation of defects. To overcome this problem, we deposited nanostructured TiO2 thin film on ZnO nanorods to form a stable shell. ZnO nanorods synthesized by wet-chemistry are single crystals. Three different procedures for deposition of TiO2 were applied. The influence of preparation methods and parameters on the structure, morphology, electrical and optical properties were studied. Nanostructured TiO2 shells show different morphologies dependent on deposition methods: (1) separated nanoparticles (by pulsed laser deposition (PLD) in Ar), (2) a layer with nonhomogeneous thickness (by PLD in vacuum or DC reactive magnetron sputtering), and (3) a homogenous thin layer along the nanorods (by chemical deposition). Based on the structural study, we chose the preparation parameters to obtain an anatase structure of the TiO2 shell. Impedance spectroscopy shows pure electron conductivity that was considerably better in all the ZnO@TiO2 than in bare ZnO nanorods or TiO2 layers. The best conductivity among the studied samples and the lowest activation energy was observed for the sample with a chemically deposited TiO2 shell. Higher transparency in the visible part of spectrum was achieved for the sample with a homogenous TiO2 layer along the nanorods, then in the samples with a layer of varying thickness.

Electrical and optical properties of graphite/ZnO nanorods heterojunctions

Carbon ◽  
2014 ◽  
Vol 77 ◽  
pp. 1011-1019 ◽  
Author(s):  
R. Yatskiv ◽  
V.V. Brus ◽  
M. Verde ◽  
J. Grym ◽  
P. Gladkov
Keyword(s):  
Optical Properties ◽  
Zno Nanorods ◽  
Electrical And Optical Properties

Morphological, Electrical and Optical Properties of Al-Doped Zinc Oxide Nanorods

2015 ◽  
Vol 1110 ◽  
pp. 218-221 ◽  
Author(s):  
R.R. Kothawale ◽  
R.M. Mohite
Keyword(s):  
Zinc Oxide ◽  
Optical Properties ◽  
Zno Nanorods ◽  
Resistivity Measurement ◽  
Xrd Analysis ◽  
Zinc Oxide Nanorods ◽  
Electrical Resistivity Measurement ◽  
Potential Candidate ◽  
Electrical And Optical Properties ◽  
Oxide Nanorods

We have studied the structural, electrical and optical properties of Al-doped Zinc Oxide (ZnO) nanostructures deposited on glass substrate by chemical bath deposition method. Scanning electrom microscope images clearly reveal that AZO nanorods were successfully grown. The XRD analysis indicates that polycrystalline nature of ZnO nanorods. The calculated grain size is about 84 nm. Electrical resistivity measurement study showes the minimum d.c. resistivity of 3.216×10-4 Ω.cm was obtained for the AZO films sintered at 300°C. It gives AZO can be adopted as a transparant conductive oxide (TCO) material. Optical transmission spectra showes that more than 80% transmission and 3.47 eV optical band gap of harvested AZO films. It is a potential candidate for ligth emitting diodes (LEDs), photonic crystals, TCO and photovoltaic application.

scholarly journals Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

2000 ◽  
Vol 5 (S1) ◽  
pp. 131-137 ◽  
Author(s):  
T. Paskova ◽  
S. Tungasmita ◽  
E. Valcheva ◽  
E.B. Svedberg ◽  
B. Arnaudov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapour Phase ◽  
Free Carrier ◽  
Buffer Layers ◽  
Electrical And Optical Properties ◽  
Homoepitaxial Growth ◽  
Si Doping ◽  
Structure Morphology ◽  
Film Substrate

We report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN ‘template’. Additionally the effect of Si doping of the GaN buffer layers on the HVPEGaN properties was analysed.

Electrical and Luminescent Properties of Size Controlled ZnO Nanorods

2006 ◽  
Vol 510-511 ◽  
pp. 946-949 ◽  
Author(s):  
Jae Young Park ◽  
Chang Won Oh ◽  
Ju Jin Kim ◽  
Sang Sub Kim
Keyword(s):  
Optical Properties ◽  
Electrical Transport ◽  
Metalorganic Chemical Vapor Deposition ◽  
Zno Nanorods ◽  
Chemical Vapor ◽  
Luminescent Properties ◽  
Photoluminescent Property ◽  
Electrical And Optical Properties ◽  
Precursor Ratio ◽  
Size Controlled

Well-aligned ZnO nanorods were synthesized using metalorganic chemical vapor deposition. Their size was controlled by adjusting the O/Zn precursor ratio. The electrical transport and optical properties of the size-controlled nanorods were investigated. The elelctron concentration and electron mobility in the nanorods are not sensitive to the change of the precursor ratio. In addition, the photoluminescent property is nearly the same regardless of their different sizes. These results suggest that altering the precursor ratio is a way of fabricating size-controlled ZnO nanorods with quite consistent electrical and optical properties.

Hydride Vapour Phase Homoepitaxial Growth of GaN on MOCVD-Grown ‘Templates’

1999 ◽  
Vol 595 ◽  
Author(s):  
T. Paskova ◽  
S. Tungasmita ◽  
E. Valcheva ◽  
E.B. Svedberg ◽  
B. Arnaudov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapour Phase ◽  
Free Carrier ◽  
Buffer Layers ◽  
Electrical And Optical Properties ◽  
Homoepitaxial Growth ◽  
Si Doping ◽  
Structure Morphology ◽  
Film Substrate

AbstractWe report on an improved quality of thick HVPE-GaN grown on MOCVD-GaN ‘template’ layers compared to the material grown directly on sapphire. The film-substrate interface revealed by cathodoluminescence measurements shows an absence of highly doped columnar structures which are typically present in thick HVPE-GaN films grown directly on sapphire. This improved structure results in a reduction of two orders of magnitude of the free carrier concentration from Hall measurements. It was found that the structure, morphology, electrical and optical properties of homoepitaxial thick GaN layers grown by HVPE were strongly influenced by the properties of the MOCVD-GaN ‘template’. Additionally the effect of Si doping of the GaN buffer layers on the HVPEGaN properties was analysed.

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe
Keyword(s):  
Optical Properties ◽  
Electrical And Optical Properties
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