scholarly journals Investigation of Metastable Low Dimensional Halometallates

Molecules ◽  
2022 ◽  
Vol 27 (1) ◽  
pp. 280
Author(s):  
Navindra Keerthisinghe ◽  
Matthew S. Christian ◽  
Anna A. Berseneva ◽  
Gregory Morrison ◽  
Vladislav V. Klepov ◽  
...  

The solvothermal synthesis, structure determination and optical characterization of five new metastable halometallate compounds, [1,10-phenH][Pb3.5I8] (1), [1,10-phenH2][Pb5I12]·(H2O) (2), [1,10-phen][Pb2I4] (3), [1,10-phen]2[Pb5Br10] (4) and [1,10-phenH][SbI4]·(H2O) (5), are reported. The materials exhibit rich structural diversity and exhibit structural dimensionalities that include 1D chains, 2D sheets and 3D frameworks. The optical spectra of these materials are consistent with bandgaps ranging from 2.70 to 3.44 eV. We show that the optical behavior depends on the structural dimensionality of the reported materials, which are potential candidates for semiconductor applications.

2007 ◽  
Vol 106 (2-3) ◽  
pp. 296-300 ◽  
Author(s):  
Li Zhang ◽  
Jing Liang ◽  
Shengjie Peng ◽  
Yunhui Shi ◽  
Jun Chen

2006 ◽  
Vol 940 ◽  
Author(s):  
Joan Carvajal ◽  
Magdalena Aguilo ◽  
Francesc Diaz ◽  
J. Carlos Rojo

ABSTRACTEr-doped GaN rod-shaped low-dimensional structures have been synthesized on the surface of a silicon (001) substrate by the direct reaction of Ga, NH3 and Er using a catalyst-assisted chemical vapor deposition technique. The low-dimensional nanostructures were characterized spectrocopically analyzing the hypersensitive 4G11/2 and 2H11/2 bands of Er3+ located at 375 and 425 nm, respectively. Green and near-infrared (IR) emission produced by these Er-doped GaN low-dimensional structures has been observed under excitation at 488 and 543 nm in a confocal microscope.


2019 ◽  
Vol 74 (2) ◽  
pp. 191-195
Author(s):  
Luqman Ali ◽  
Seokjae Bang ◽  
Yong Joong Lee ◽  
Clare Chisu Byeon

2000 ◽  
Vol 5 (S1) ◽  
pp. 747-753
Author(s):  
E. Dogheche ◽  
B. Belgacem ◽  
D. Remiens ◽  
P. Ruterana ◽  
F. Omnes

An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.


1999 ◽  
Vol 595 ◽  
Author(s):  
E. Dogheche ◽  
B. Belgacem ◽  
D. Remiens ◽  
P. Ruterana ◽  
F. Omnes

AbstractAn optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.


2020 ◽  
Vol 12 (4) ◽  
pp. 04022-1-04022-4
Author(s):  
Piyush Patel ◽  
◽  
S. M. Vyas ◽  
Vimal Patel ◽  
Himanshu Pavagadhi ◽  
...  

2014 ◽  
Vol 01 (999) ◽  
pp. 1-1
Author(s):  
Wei Zhu ◽  
Qihui Shen ◽  
Xinjian Bao ◽  
Xiao Bai ◽  
Tingting Li ◽  
...  

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