Synthesis and Optical Characterization of Er-Doped GaN Low-Dimensional Structures

2006 ◽  
Vol 940 ◽  
Author(s):  
Joan Carvajal ◽  
Magdalena Aguilo ◽  
Francesc Diaz ◽  
J. Carlos Rojo
Keyword(s):  
Vapor Deposition ◽  
Near Infrared ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Direct Reaction ◽  
Vapor Deposition Technique ◽  
Low Dimensional ◽  
Er Doped ◽  
Ir Emission

ABSTRACTEr-doped GaN rod-shaped low-dimensional structures have been synthesized on the surface of a silicon (001) substrate by the direct reaction of Ga, NH3 and Er using a catalyst-assisted chemical vapor deposition technique. The low-dimensional nanostructures were characterized spectrocopically analyzing the hypersensitive 4G11/2 and 2H11/2 bands of Er3+ located at 375 and 425 nm, respectively. Green and near-infrared (IR) emission produced by these Er-doped GaN low-dimensional structures has been observed under excitation at 488 and 543 nm in a confocal microscope.

Electrical and optical characterization of SiONC dielectric thin film deposited by polymer-source chemical vapor deposition

2007 ◽  
Vol 101 (8) ◽  
pp. 084107 ◽  
Author(s):  
El Hassane Oulachgar ◽  
Cetin Aktik ◽  
Mihai Scarlete ◽  
Starr Dostie ◽  
Rob Sowerby ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Dielectric Thin Film

GROWTH AND CHARACTERIZATION OF p-Type GaAs LAYERS USING ATOMIC HYDROGEN AS A REAGENT

2001 ◽  
Vol 15 (17n19) ◽  
pp. 809-812 ◽  
Author(s):  
F. SILVA-ANDRADE ◽  
F. CHÁVEZ ◽  
F. TENORIO ◽  
N. MORALES ◽  
J. I. BECERRA PONCE DE LEON ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Conductivity Type ◽  
Technological Field ◽  
Vapor Deposition Technique ◽  
P Type ◽  
Residual Impurities

Atomic hydrogen has been found to have a great number of useful applications in the technological field of semiconducting materials. It has been used as a reagent in the epitaxial growth processes to control the incorporation of residual impurities. Atomic hydrogen can react with GaAs thus producing Ga- and As- hydrogen volatile species in controlled conditions. The atomic hydrogen can be produced in a chemical vapor deposition chamber using a hot tungsten filament. In this work we report the results of a study on GaAs layers grown using the close space vapor deposition technique with atomic hydrogen as a reagent. The conductivity type of the grown layers is closely related to the conductivity type of the GaAs source. We have grown p-type GaAs layers with l×1018 cm-3 hole concentration using GaAs sources with the same acceptor concentration. 10 K photoluminesence measurements were nlade on the source and the epitaxial GaAs layers. The PL spectra revealed that the residual impurities in the GaAs layers were originated from the source. The mirror like appearance of the grown layers as well as their electrical and optical characteristics demonstrate they can be used in the manufacture of GaAs semiconductor devices.

Microstructural and Optical Characterization of GaN Films Grown by PECVD on (0001) Sapphire Substrates

1989 ◽  
Vol 162 ◽  
Author(s):  
T. P. Humphreys ◽  
C. A. Sukow ◽  
R. J. Nemanich ◽  
J. B. Posthill ◽  
R. A. Rudder ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization ◽  
Epitaxial Films ◽  
Optical And Electrical Properties ◽  
Spectroscopy Data ◽  
Sapphire Substrates ◽  
Cubic Gan ◽  
First Time

ABSTRACTEpitaxial GaN films have been grown by plasma-enhanced chemical vapor deposition (PECVD). The growth procedure utilizes a He gas discharge combined with the down-stream introduction of trimethylgallium (TMGa) and nitrogen. Both cubic [1111 and wurtzitic [0001] GaN epitaxial films have been achieved on (0001) sapphire substrates. Differences in substrate growth temperatures are believed to account for the different observed phases. A comparative study pertaining to the microstructural, optical and electrical properties of the α-GaN and β-GaN heteroepitaxial films is presented. Also reported for the first time is the Raman spectroscopy data for cubic GaN.

scholarly journals Synthesis, microstructural and optical characterization of LiNbO3 thin films deposited by aerosol assisted chemical vapor deposition

2014 ◽  
Vol 24 (4) ◽  
pp. 21-26 ◽  
Author(s):  
J. A. Ocón-Arellanes ◽  
J. G. Murillo-Ramírez ◽  
P. Amézaga-Madrid ◽  
M. Miki-Yoshida
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Characterization
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