Elucidating the Effect of Etching Time Key-Parameter toward Optically and Electrically-Active Silicon Nanowires

In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity have been fabricated through a facile, reliable, and cost-effective metal assisted chemical etching method. After introducing an itemized elucidation of the fabrication process, the effect of varying etching time on morphological, structural, optical, and electrical properties of SiNWs was analysed. The NWs length increased with increasing etching time, whereas the wires filling ratio decreased. The broadband photoluminescence (PL) emission was originated from self-generated silicon nanocrystallites (SiNCs) and their size were derived through an analytical model. FTIR spectroscopy confirms that the PL deterioration for extended time is owing to the restriction of excitation volume and therefore reduction of effective light-emitting crystallites. These SiNWs are very effective in reducing the reflectance to 9–15% in comparison with Si wafer. I–V characteristics revealed that the rectifying behaviour and the diode parameters calculated from conventional thermionic emission and Cheung’s model depend on the geometry of SiNWs. We deduce that judicious control of etching time or otherwise SiNWs’ length is the key to ensure better optical and electrical properties of SiNWs. Our findings demonstrate that shorter SiNWs are much more optically and electrically active which is auspicious for the use in optoelectronic devices and solar cells applications.

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Electrical Properties of Silicon Nanowires Schottky Barriers Prepared by MACE at Different Etching Time

10.21203/rs.3.rs-185736/v1 ◽

2021 ◽

Author(s):

Ahlem Rouis ◽

Neila Hizem ◽

Mohamed Hassen ◽

Adel kalboussi

Keyword(s):

Electrical Properties ◽

Silicon Nanowires ◽

Thermionic Emission ◽

Electrical Characterization ◽

Tunneling Current ◽

Electrical Measurement ◽

Schottky Barriers ◽

Etching Time ◽

Current Voltage ◽

Thermionic Field Emission

Abstract This article focused on the electrical characterization of silicon nanowires Schottky barriers following structural analysis of nanowires grown on p-type silicon by Metal (Ag) Assisted Chemical Etching (MACE) method distinguished by their different etching time (5min, 10min, 25min). The SiNWs are well aligned and distributed almost uniformly over the surface of a silicon wafer. In order to enable electrical measurement on the silicon nanowires device, Schottky barriers were performed by depositing Al on the vertically aligned SiNWs arrays. The electrical properties of the resulting Al/SiNWs diodes were characterized by current voltage (I-V) and capacity voltage (C-V) measurements. Unlike the conventional Schottky diode, symmetrical current-voltage (I-V) characteristics have been observed with a rectification ratio < 4. The metal-semiconductor-metal (M-S-M) model was used to analyze the (I-V) characteristics by including two Schottky barriers at the interface between metal and SiNWs. The electron transport behavior is explained by the thermionic field emission method (TFE) which added the effect of the tunneling current compared to the conventional thermionic emission theory. The capacitance-voltage C-V characteristics of SiNWs depend on the bias voltage showing that the samples have an obvious space charge region. Symmetric behavior also appears in the C –V curves that confirm the MSM model.

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Ultrathin Silicon Nanowires for Optical and Electrical Nitrogen Dioxide Detection

Nanomaterials ◽

10.3390/nano11071767 ◽

2021 ◽

Vol 11 (7) ◽

pp. 1767

Author(s):

Dario Morganti ◽

Antonio Alessio Leonardi ◽

Maria José Lo Faro ◽

Gianluca Leonardi ◽

Gabriele Salvato ◽

...

Keyword(s):

Nitrogen Dioxide ◽

Silicon Nanowires ◽

Technological Progress ◽

Low Cost ◽

Cost Effective ◽

Fast Response ◽

Small Concentration ◽

Optical And Electrical Properties ◽

Light Emitting ◽

Nanostructured Sensors

The ever-stronger attention paid to enhancing safety in the workplace has led to novel sensor development and improvement. Despite the technological progress, nanostructured sensors are not being commercially transferred due to expensive and non-microelectronic compatible materials and processing approaches. In this paper, the realization of a cost-effective sensor based on ultrathin silicon nanowires (Si NWs) for the detection of nitrogen dioxide (NO2) is reported. A modification of the metal-assisted chemical etching method allows light-emitting silicon nanowires to be obtained through a fast, low-cost, and industrially compatible approach. NO2 is a well-known dangerous gas that, even with a small concentration of 3 ppm, represents a serious hazard for human health. We exploit the particular optical and electrical properties of these Si NWs to reveal low NO2 concentrations through their photoluminescence (PL) and resistance variations reaching 2 ppm of NO2. Indeed, these Si NWs offer a fast response and reversibility with both electrical and optical transductions. Despite the macro contacts affecting the electrical transduction, the sensing performances are of high interest for further developments. These promising performances coupled with the scalable Si NW synthesis could unfold opportunities for smaller sized and better performing sensors reaching the market for environmental monitoring.

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