Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar (
          
            
              
                11
                
                  2
                  ¯
                
                2
              
            
          
        ) and Non-Polar (
          
            
              
                11
                
                  2
                  ¯
                
                0
              
            
          
        ) GaN Nanorods

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

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ICP Dry Etching of III-V Nitrides

MRS Proceedings ◽

10.1557/proc-468-393 ◽

1997 ◽

Vol 468 ◽

Cited By ~ 5

Author(s):

C. B. Vartuli ◽

J. W. Lee ◽

J. D. MacKenzie ◽

S. M. Donovan ◽

C. R. Abernathy ◽

...

Keyword(s):

Plasma Etching ◽

Inductively Coupled Plasma ◽

Dry Etching ◽

Rf Power ◽

Inductively Coupled Plasma Etching ◽

Inductively Coupled ◽

Dc Bias ◽

Etch Rates ◽

Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

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Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Micromachines ◽

10.3390/mi11070638 ◽

2020 ◽

Vol 11 (7) ◽

pp. 638

Author(s):

Lihao Wang ◽

Meijie Liu ◽

Junyuan Zhao ◽

Jicong Zhao ◽

Yinfang Zhu ◽

...

Keyword(s):

Plasma Etching ◽

Inductively Coupled Plasma ◽

Large Scale ◽

Etch Depth ◽

Wafer Level ◽

Small Surface ◽

Inductively Coupled Plasma Etching ◽

Inductively Coupled ◽

Icp Etching ◽

Batch Fabrication

This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 μm, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing.

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ICP Etching of 4H-SiC Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.825 ◽

2013 ◽

Vol 740-742 ◽

pp. 825-828 ◽

Cited By ~ 5

Author(s):

Jerome Biscarrat ◽

Jean François Michaud ◽

Emmanuel Collard ◽

Daniel Alquier

Keyword(s):

Process Parameters ◽

Plasma Etching ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Effective Technique ◽

Working Pressure ◽

Inductively Coupled ◽

Icp Etching ◽

High Etch Rate ◽

The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

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Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

Journal of Micromechanics and Microengineering ◽

10.1088/0960-1317/25/1/015016 ◽

2014 ◽

Vol 25 (1) ◽

pp. 015016 ◽

Cited By ~ 4

Author(s):

P-C Chen ◽

P-T Lin ◽

D G Mikolas ◽

Y-W Tsai ◽

Y-L Wang ◽

...

Keyword(s):

Single Crystal ◽

Plasma Etching ◽

Inductively Coupled Plasma ◽

Resonant Cavities ◽

X Ray ◽

Inductively Coupled Plasma Etching ◽

Inductively Coupled ◽

Single Crystal Sapphire

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Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.721.346 ◽

2013 ◽

Vol 721 ◽

pp. 346-349

Author(s):

Zhi Qin Zhong ◽

Cheng Tao Yang ◽

Guo Jun Zhang ◽

Shu Ya Wang ◽

Li Ping Dai

Keyword(s):

Process Parameters ◽

Plasma Etching ◽

Inductively Coupled Plasma ◽

Etch Rate ◽

Dry Etching ◽

Rf Power ◽

Inductively Coupled Plasma Etching ◽

Inductively Coupled ◽

High Etch Rate ◽

Ar Gas

Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

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