Bulk vertical micromachining of single-crystal sapphire using inductively coupled plasma etching for x-ray resonant cavities

2014 ◽  
Vol 25 (1) ◽  
pp. 015016 ◽  
Author(s):  
P-C Chen ◽  
P-T Lin ◽  
D G Mikolas ◽  
Y-W Tsai ◽  
Y-L Wang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Resonant Cavities ◽  
X Ray ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Single Crystal Sapphire

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

Estimation of Inductively Coupled Plasma Etching Damage of Boron-Doped Diamond Using X-Ray Photoelectron Spectroscopy

2017 ◽  
Vol 214 (11) ◽  
pp. 1700233 ◽  
Author(s):  
Yukako Kato ◽  
Hiroyuki Kawashima ◽  
Toshiharu Makino ◽  
Masahiko Ogura ◽  
Aboulaye Traoré ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Boron Doped Diamond ◽  
X Ray ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Boron Doped

Interplay of Defects, Microstructures, and Surface Stoichiometry during Plasma Processing of GaN

2002 ◽  
Vol 722 ◽  
Author(s):  
A. Ramam ◽  
S. Tripathy ◽  
S.J. Chua
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
X Ray ◽  
Force Microscopy ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Atomic Force ◽  
Etched Surface ◽  
Mg Doped

AbstractWe have investigated optical properties of dry etched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.

Inductively coupled plasma etching for delineation of InAs/GaSb pixels

2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled
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