ICP Etching of 4H-SiC Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 825-828 ◽  
Author(s):  
Jerome Biscarrat ◽  
Jean François Michaud ◽  
Emmanuel Collard ◽  
Daniel Alquier
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Effective Technique ◽  
Working Pressure ◽  
Inductively Coupled ◽  
Icp Etching ◽  
High Etch Rate ◽  
The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

2013 ◽  
Vol 721 ◽  
pp. 346-349
Author(s):  
Zhi Qin Zhong ◽  
Cheng Tao Yang ◽  
Guo Jun Zhang ◽  
Shu Ya Wang ◽  
Li Ping Dai
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
High Etch Rate ◽  
Ar Gas

Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

scholarly journals Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 638
Author(s):  
Lihao Wang ◽  
Meijie Liu ◽  
Junyuan Zhao ◽  
Jicong Zhao ◽  
Yinfang Zhu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Etch Depth ◽  
Wafer Level ◽  
Small Surface ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Batch Fabrication

This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 μm, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing.

Fabrication of SiC Nanopillars by Inductively Coupled SF6/O2 Plasma

2012 ◽  
Vol 711 ◽  
pp. 66-69 ◽  
Author(s):  
Ji Hoon Choi ◽  
Laurence Latu-Romain ◽  
Florian Dhalluin ◽  
Thierry Chevolleau ◽  
Bassem Salem ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etch Rate ◽  
High Selectivity ◽  
Nanometer Scale ◽  
Etch Depth ◽  
Fabrication Technique ◽  
Top Down ◽  
Inductively Coupled ◽  
High Anisotropy ◽  
High Etch Rate

A top-down fabrication technique for nanometer scale silicon carbide (SiC) pillars has been demonstrated by using inductively coupled SF6/O2 plasma etching. At optimal etching conditions, the obtained SiC nanopillars exhibit high anisotropy features (aspect ratio ~ 6.5) with high etch depth (>7 μm). The etch characteristics of SiC nanopillars under these conditions show a high etch rate (550 nm/min) and a high selectivity (over 60 for Ni).

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