scholarly journals Photonic Cavity Effects for Enhanced Efficiency in Layered Perovskite-Based Light-Emitting Diodes

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 2947
Author(s):  
Lyuye Lin ◽  
Remo Proietti Zaccaria ◽  
Denis Garoli ◽  
Roman Krahne

Layered architectures for light-emitting diodes (LEDs) are the standard approach for solution-processable materials such as metal-halide perovskites. Upon designing the composition and thicknesses of the layers forming the LED, the primary focus is typically on the optimization of charge injection and balance. However, this approach only considers the process until electrons and holes recombine to generate photons, while for achieving optimized LED performance, the generated light must also be efficiently outcoupled. Our work focuses on the latter aspect. We assume efficient photon generation and analyze the effects of the geometrical configuration together with the dipole orientation, mimicking the light emission, on the main characteristics defining the LED, such as the Purcell effect and the outcoupling efficiency. We find that in-plane dipoles result in significantly increased outcoupling efficiency. Furthermore, the mismatch in refractive index among the layers and their different thicknesses can be tuned to maximize the Purcell effect and minimize internal losses. The combined optimization of dipole orientation and layer thicknesses can improve the efficiency of the LED up to a factor 10, hence highlighting the importance of considering also the photonic properties of the LED structures if the objective is to maximize the LED performance.

2010 ◽  
Vol 22 (28) ◽  
pp. 3062-3066 ◽  
Author(s):  
Sang-Il Park ◽  
An-Phong Le ◽  
Jian Wu ◽  
Yonggang Huang ◽  
Xiuling Li ◽  
...  

2019 ◽  
Vol 33 (08) ◽  
pp. 1950088
Author(s):  
Sipan Yang ◽  
Miao He ◽  
Jianchang Yan ◽  
Kunhua Wen ◽  
Junxi Wang ◽  
...  

Through the silicon modulation-doping (MD) growth method, the electrical performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) is improved by replacing the commonly uniform-doped (UD) method of n-AlGaN layer. The electroluminescence characterisic measurements demonstrate the MD growth method could effectively enhance the light emission intensity. Both the forward voltage and reverse leakage current of the MD samples are obviously reduced compared to those of the UD sample. Due to the existence of periodic Si-MD superlattices in n-AlGaN layers, which may behave like a series of capacitors, the built-in electric fields are formed. Both the measured capacitance–voltage (C–V) characteristics, and related photoluminescence (PL) intensity with the Si-MD growth method are enhanced. In detail, the effects of these capacitors can enhance the peak internal capacitance up to 370 pF in the MD sample, whereas the UD sample is only 180 pF. The results also mean that with better current spreading ability in the MD sample, the MD processes can effectively enhance the efficiency and reliability of DUV-LEDs. Thus, the investigations of the Si-MD growth methods may be useful for improving the electrical performance of DUV-LEDs in future works. Meanwhile, this investigation may partly suggest the minor crystalline quality improvements in the epi-layers succeeding the MD n-AlGaN layer.


2007 ◽  
Vol 91 (5) ◽  
pp. 051117 ◽  
Author(s):  
Martin F. Schubert ◽  
Sameer Chhajed ◽  
Jong Kyu Kim ◽  
E. Fred Schubert ◽  
Jaehee Cho

APL Materials ◽  
2020 ◽  
Vol 8 (4) ◽  
pp. 040901 ◽  
Author(s):  
Bo Sun ◽  
Ying Xu ◽  
Yonghua Chen ◽  
Wei Huang

2006 ◽  
Vol 18 (19) ◽  
pp. 2029-2031 ◽  
Author(s):  
C.-T. Lee ◽  
U.-Z. Yang ◽  
C.-S. Lee ◽  
P.-S. Chen

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