scholarly journals Efficient Light Management in a Monolithic Tandem Perovskite/Silicon Solar Cell by Using a Hybrid Metasurface

Nanomaterials ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 791 ◽  
Author(s):  
Mahmoud H. Elshorbagy ◽  
Braulio García-Cámara ◽  
Eduardo López-Fraguas ◽  
Ricardo Vergaz
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Back Contact ◽  
Light Management ◽  
Promising Solution ◽  
Conversion Efficiencies

Solar energy is now dealing with the challenge of overcoming the Shockley–Queisser limit of single bandgap solar cells. Multilayer solar cells are a promising solution as the so-called third generation of solar cells. The combination of materials with different bandgap energies in multijunction cells enables power conversion efficiencies up to 30% at reasonable costs. However, interfaces between different layers are critical due to optical losses. In this work, we propose a hybrid metasurface in a monolithic perovskite-silicon solar cell. The design takes advantage of light management to optimize the absorption in the perovskite, as well as an efficient light guiding towards the silicon subcell. Furthermore, we have also included the effect of a textured back contact. The optimum proposal provides an enhancement of the matched short-circuit current density of a 20.5% respect to the used planar reference.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

scholarly journals Donor-π-Conjugated Spacer-Acceptor Dye-Sensitized Solid-State Solar Cell Using CuI as the Hole Collector

2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
D. N. Liyanage ◽  
K. D. M. S. P. K. Kumarasinghe ◽  
G. R. A. Kumara ◽  
A. C. A. Jayasundera ◽  
K. Tennakone ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Solid State ◽  
Short Circuit ◽  
Electrical Power ◽  
Short Circuit Current ◽  
Liquid Electrolyte ◽  
Short Circuit Current Density ◽  
Dye Sensitized ◽  
Type Semiconductor

Dye-sensitized solid-state solar cells (DSSCs) replacing the liquid electrolyte with a p-type semiconductor have been extensively examined to solve the practical problems associated with wet-type solar cells. Here, we report the fabrication of a solid-state solar cell using copper iodide (CuI) as the hole conductor and alkyl-functionalized carbazole dye (MK-2) as the sensitizer. A DSSC sensitized with MK-2 showed a solar-to-electrical power conversion efficiency of 3.33% with a Voc of 496 mV and a Jsc of 16.14 mA cm-2 under AM 1.5 simulated sunlight. The long alkyl chains act as a barrier for charge recombination, and the strong accepting and donating abilities of the cyanoacrylic and carbazole groups, respectively, enhance the absorption of light at a longer wavelength, increasing the short-circuit current density. The efficiency recorded in this work is higher than similar DSSCs based on other hole collectors.

Preparation of the Three Main Layers of CdS/CdTe Thin Film Solar Cells Using a Single Vacuum System

2011 ◽  
Vol 378-379 ◽  
pp. 601-605 ◽  
Author(s):  
Saleh N. Alamri ◽  
M. S. Benghanem ◽  
A. A. Joraid
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fused Silica ◽  
Vacuum System ◽  
Cdte Thin Film

This study investigates the preparation of the three main layers of a CdS/CdTe thin film solar cell using a single vacuum system. A Close Space Sublimation System was constructed to deposit CdS, CdTe and CdCl2 solar cell layers. Two hot plates were used to heat the source and the substrate. Three fused silica melting dishes were used as containers for the sources. The properties of the deposited CdS and CdTe films were determined via Atomic force microscopy, scanning electron microscopy, X-ray diffraction and optical transmission spectroscopy. An J-V characterization of the fabricated CdS/CdTe solar cells was performed under solar radiation. The short-circuit current density, Jsc, the open-circuit voltage, Voc, fill factor, FF and conversion efficiency, η, were measured and yielded values of 27 mA/cm2, 0.619 V, 58% and 9.8%, respectively.

Enhanced Light Absorption in a-Si:H Layers of Solar Cells by Applying Tco/Metal Back Contacts

1993 ◽  
Vol 297 ◽  
Author(s):  
G. Tao ◽  
B.S. Girwar ◽  
G.E.N. Landweer ◽  
M. Zeman ◽  
J.W. Metselaar
Keyword(s):  
Solar Cells ◽  
Metal Layer ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Back Contact ◽  
Flat Substrate ◽  
Metal Layers ◽  
Metal Back

The optimization of the back contact reflectivity for thin film a-Si:H solar cells has been performed. The results of optical calculations show that a-Si:H/TCO/Metal interfaces with a proper TCO thickness reflect much more than their a-Si:H/Metal counterparts. We compared solar cells which were deposited on a flat substrate with different back contacts. The back contacts consisted of a metal layer (aluminum, silver/aluminum) or combined TCO/metal layers (TCO/Al, TCO/Ag/Al). The same was done with solar cells which were deposited on a textured substrate. The solar cells with a TCO/metal back contact showed not only a significantly increased short-circuit current density but also an increase in the spectral response. The cells with TCO/Ag/Al back contact showed the best result.

scholarly journals Novel Photonic Crystal Based Polycrystalline CdTe/Silicon Solar Cells

2020 ◽  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Photonic Crystal ◽  
Conversion Efficiency ◽  
Current Density ◽  
Cell Structure ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Silicon Solar Cells

In this paper, a novel photonic crystal (PhC) polycrystalline CdTe/Silicon solar cells are theoretically explained that increase their short circuit current density and conversion efficiency. The proposed structure consist of a polycrystalline CdTe/Silicon solar cell that a photonic crystal is formed in the upper cell. The optical confinement is achieved by means of photonic crystal that can adjust the propagation and distribution of photons in solar cells. For validation of modeling, the electrical properties of the experimentally-fabricated based CdS/CdTe solar cell is modeled and compared that there is good agreement between the modeling results and experimental results from the litterature. The results of this study showed that the solar cell efficiency is increased by about 25% compared to the reference cell by using photonic crystal. The open circuit voltage, short circuit current density, fill factor and conversion efficiency of proposed solar cell structure are 1.01 V, 40.7 mA/cm2, 0.95 and 27% under global AM 1.5 conditions, respectively. Furthermore, the influence of carrier lifetime variation in the absorber layer of proposed solar cell on the electrical characteristics was theoretically considered and investigated.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

A Comparative Study between Silicon Germanium and Germanium Solar Cells by Numerical Simulation

2015 ◽  
Vol 761 ◽  
pp. 341-346 ◽  
Author(s):  
Ahmad Aizan Zulkefle ◽  
Maslan Zainon ◽  
Zaihasraf Zakaria ◽  
Mohd Ariff Mat Hanafiah ◽  
Nurul Huda Abdul Razak ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Fill Factor ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cell Modeling ◽  
Modeling Software

This paper presents the performance between silicon germanium (SiGe) and crystalline germanium (Ge) solar cells in terms of their simulated open circuit voltage, short circuit current density, fill factor and efficiency. The PC1D solar cell modeling software has been used to simulate and analyze the performance for both solar cells, and the total thickness is limited to 1μm of both SiGe and Ge solar cells. The Si0.1Ge0.9 thickness is varied from 10nm to 100nm to examine the effect of Si0.1Ge0.9 thickness on SiGe solar cell. The result of simulation exhibits the SiGe solar cell give a better performance compared to Ge solar cell. The efficiency of 9.74% (VOC = 0.48V, JSC = 27.86mA/cm2, FF =0.73) is achieved with Si0.1Ge0.9 layer of 0.1μm in thickness whilst 2.73% (VOC = 0.20V, JSC = 27.31mA/cm2, FF =0.50) efficiency is obtained from Ge solar cell.

Bifacial microcrystalline silicon solar cells with improved performance due to μc-SiOx:H doped layers

2014 ◽  
Vol 92 (7/8) ◽  
pp. 913-916 ◽  
Author(s):  
V. Smirnov ◽  
A. Lambertz ◽  
F. Finger
Keyword(s):  
Solar Cells ◽  
Silicon Oxide ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Microcrystalline Silicon ◽  
Improved Performance ◽  
Conversion Efficiencies ◽  
Insight Into

We present the development and application of n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) in semitransparent bifacial microcrystalline silicon (μc-Si:H) solar cells. Semitransparent bifacial solar cells are of interest for a number of technical applications like building integration or concentrator devices, but also can offer new insight into solar cell properties due to the possibility to illuminate the cell from both sides. Appropriately selected μc-SiOx:H n-layers with low refractive index and high optical band gap allow the reduction of the reflection of the cells and improve short circuit current density (JSC) and conversion efficiencies. The quality of n-type μc-SiOx:H window layers is demonstrated in solar cells with highly reflective ZnO/Ag contacts. High JSC values of 24.8 mA/cm2 and efficiencies of 9.5% are obtained for 1 μm thick solar cells.

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