scholarly journals Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode

Nanomaterials ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 1639 ◽  
Author(s):  
Chun-Yu Lee ◽  
Ya-Pei Kuo ◽  
Peng-Yu Chen ◽  
Hsieh-Hsing Lu ◽  
Ming Yi Lin
Keyword(s):  
Annealing Temperature ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Performance Measurements ◽  
Charge Balance ◽  
Light Emitting ◽  
Annealing Temperatures ◽  
Single Carrier ◽  
Maximum Current ◽  
Mg Doped

In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 °C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure.

Electron-irradiated n+-Si as hole injection tunable anode of organic light-emitting diode

2012 ◽  
Vol 110 (1) ◽  
pp. 95-99 ◽  
Author(s):  
Y. Z. Li ◽  
Z. L. Wang ◽  
Y. Z. Wang ◽  
H. Luo ◽  
W. J. Xu ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light

Mg-doped ZnO nanostructures for efficient Organic Light Emitting Diode

Vacuum ◽  
2019 ◽  
Vol 166 ◽  
pp. 370-376 ◽  
Author(s):  
Payal Manzhi ◽  
Reena Kumari ◽  
Md.B. Alam ◽  
G.R. Umapathy ◽  
Richa Krishna ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Zno Nanostructures ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Doped Zno ◽  
Mg Doped

scholarly journals Use of Hybrid PEDOT:PSS/Metal Sulfide Quantum Dots for a Hole Injection Layer in Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes

2021 ◽  
Vol 9 ◽  
Author(s):  
Wenqing Zhu ◽  
Kuangyu Ding ◽  
Chen Yi ◽  
Ruilin Chen ◽  
Bin Wei ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Metal Sulfide ◽  
Molybdenum Sulfide ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Highly Efficient ◽  
Organic Light

In this study, we have synthesized the molybdenum sulfide quantum dots (MoS2 QDs) and zinc sulfide quantum dots (ZnS QDs) and demonstrated a highly efficient green phosphorescent organic light-emitting diode (OLED) with hybrid poly (3,4-ethylenedioxythiophene)/poly (styrenesulfonate) (PEDOT:PSS)/QDs hole injection layer (HIL). The electroluminescent properties of PEDOT:PSS and hybrid HIL based devices were explored. An optimized OLED based on the PEDOT:PSS/MoS2 QDs HIL exhibited maximum current efficiency (CE) of 72.7 cd A−1, which shows a 28.2% enhancement as compared to counterpart with single PEDOT:PSS HIL. The higher device performance of OLED with hybrid HIL can be attributed to the enhanced hole injection capacity and balanced charge carrier transportation in the OLED devices. The above analysis illustrates an alternative way to fabricate the high efficiency OLEDs with sulfide quantum dots as a HIL.

scholarly journals Luminous Efficiency Improvement of OLED by Thickness Variation of Organic Materials

2019 ◽  
Vol 8 (6) ◽  
pp. 4379-4382
Keyword(s):  
Light Emitting Diode ◽  
Luminous Efficiency ◽  
Hole Injection ◽  
Thickness Variation ◽  
Emission Layer ◽  
New Approach ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Interfaces ◽  
Different Thickness

Organic light emitting diode is a Solid state lighting devices, the charge transporters must be infused from the anode and cathode yet the execution, lifetime, effectiveness and solidness of these devices are normally administered by the correct thickness of the material layers and terminal/organic interfaces at the anode contacts. In this paper we exhibit a new approach using different thickness of organic material of emissive layer and hole injection layer in OLED. We could enhance the effectiveness of doping materials by framing exciplex improved OLED devices and concentrate their execution enhancement by utilizing different thickness. In this work different thickness of emission layer, ETL layer and HIL is taken and maximum luminous efficiency of different devices were observed

Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer

2014 ◽  
Vol 23 (2) ◽  
pp. 028502 ◽  
Author(s):  
Xiao-Peng Yu ◽  
Guang-Han Fan ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
Yao Xiao ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer

Polymer Layer Ordering of Polyaniline Derivatives in Pled Devices: Surface Adsorption and Characterization

1997 ◽  
Vol 488 ◽  
Author(s):  
R. C. Advincula ◽  
W. Knoll ◽  
C. W. Frank ◽  
D. Roitman ◽  
R. Moon ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Deposition Process ◽  
Film Structure ◽  
Hole Injection ◽  
Polyelectrolyte Adsorption ◽  
Light Emitting ◽  
Linear Behavior ◽  
Structure Morphology ◽  
Vis Spectroscopy ◽  
Oppositely Charged

AbstractThe fabrication and characterization of polyaniline (PANI) derivatives deposited on ITO coated glass is investigated as possible hole injection layers for MEH-PPV based polymer light emitting diode (PLED) devices. This involved multilayer ordering by the alternate polyelectrolyte adsorption of polyaniline and sulfonated poyaniline with an oppositely charged polyelectrolyte from solution. A combination of spectroscopic and microscopic techniques was utilized to determine the layer ordering, film structure, morphology, and homogeneity. The deposition process generally showed a linear behavior for all pairs as shown by ellipsometry and UV-vis spectroscopy. However, surface plasmon spectroscopy (SPS) and AFM revealed that thicker films are accompanied by increased surface roughness regardless of concentration. Comparison in performance was made between bare ITO and PANI or SPANI coated devices. Initial investigations of PLED performance showed significant improvements in lifetime and efficiency compared to bare ITO.

The role of poly(3,4-ethylenedioxythiophene):poly(styrenesulphonate) as a hole injection layer in a blue-emitting polymer light-emitting diode

2008 ◽  
Vol 104 (10) ◽  
pp. 104506 ◽  
Author(s):  
Sebastian Bange ◽  
Andriy Kuksov ◽  
Dieter Neher ◽  
Antje Vollmer ◽  
Norbert Koch ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Polymer Light Emitting Diode

Single-Carrier Devices for the Understanding of the Voltage Drift in Organic Light Emitting Diodes

2011 ◽  
Vol 1359 ◽  
Author(s):  
J. Boizot ◽  
V. Gohri ◽  
H. Doyeux
Keyword(s):  
Light Emitting Diodes ◽  
Low Voltage ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Constant Current ◽  
Light Emitting ◽  
Single Carrier ◽  
Organic Light ◽  
Voltage Drift

ABSTRACTThe aim of this study is to analyze and mitigate the voltage drift phenomenon observed in top-emitting organic light emitting diodes (OLED) when driven at constant current. An operating device may experience voltage increase over time due to factors such as interface or bulk material degradation, charge accumulation and formation of trap states. Single-carrier devices were fabricated to understand the contribution to voltage drift from each of these causes. Doping in electron injection layer (4, 7-diphenyl-1,10-phenanthroline or Bphen) and hole injection layer (2,2’,7,7’-tetra(N,N-di-tolyl)amino-spiro-bifluorene or Spiro-TTB) were optimized to obtain ohmic injection contacts. Devices with tris(8-hydroxy-quinoline) aluminium (Alq3) degrade significantly with holes injection and undergo high voltage increase in lifetime test measurements. On the contrary, devices with N,N’-di(naphtalen-1-y1)-N,N’-diphenyl-benzidine (NPB) exhibit an ambipolar charge transport behavior and low voltage drift under both hole and electron injection.

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