scholarly journals Using Thermally Crosslinkable Hole Transporting Layer to Improve Interface Characteristics for Perovskite CsPbBr3 Quantum-Dot Light-Emitting Diodes

Polymers ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 2243
Author(s):  
Chun-Cheng Lin ◽  
Shao-Yang Yeh ◽  
Wei-Lun Huang ◽  
You-Xun Xu ◽  
Yan-Siang Huang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spin Coating ◽  
Light Emitting Diodes ◽  
Coating Process ◽  
Chemical Bonds ◽  
Light Emitting ◽  
Maximum Current Density ◽  
Interface Characteristics ◽  
Maximum Current ◽  
Hole Transporting

In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr3 quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m2, the maximum current density (J) of 41.98 mA/cm2, the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.

scholarly journals Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes

2019 ◽  
Vol 9 (21) ◽  
pp. 4539 ◽  
Author(s):  
Seongkeun Oh ◽  
Jiwan Kim
Keyword(s):  
Quantum Dot ◽  
Spin Coating ◽  
Light Emitting Diodes ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Coating Process ◽  
Inverted Structure ◽  
Light Emitting ◽  
Spin Coating Process ◽  
Ito Glass

The present work shows the effect of the ZnO layer morphology on inverted quantum dot light-emitting diodes (QLEDs) using different spin-coating processes. In the inverted structure of ITO/ZnO/QDs/CBP/MoO3/Al, ZnO nanoparticles were used as the electron transport layer. The utilization of a two-step spin-coating process to deposit a ZnO layer on a patterned ITO glass substrate resulted in an increase in the surface roughness of the ZnO layer and a decrease in the luminance of the QLEDs. However, the current efficiency of the device was enhanced by more than two-fold due to the reduced current density. Optimization of the ZnO spin-coating process can efficiently improve the optical and electrical properties of QLEDs.

An Efficient Hole Transporting Polymer for Quantum Dot Light‐Emitting Diodes

2021 ◽  
pp. 2100731
Author(s):  
Wenhai Wu ◽  
Zhao Chen ◽  
Yunfeng Zhan ◽  
Bochen Liu ◽  
Weidong Song ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Hole Transporting

scholarly journals Improvement in hole transporting ability and device performance of quantum dot light emitting diodes

2020 ◽  
Vol 2 (1) ◽  
pp. 401-407
Author(s):  
Pei-Chieh Chiu ◽  
Sheng-Hsiung Yang
Keyword(s):  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Device Performance ◽  
Light Emitting ◽  
Hole Transporting

A new additive BYK-P105 was blended with PEDOT:PSS as the HTL to improve the device performance of QLEDs.

High-efficiency quantum dot light-emitting diodes employing lithium salt doped poly(9-vinlycarbazole) as a hole-transporting layer

2017 ◽  
Vol 5 (22) ◽  
pp. 5372-5377 ◽  
Author(s):  
Ying-Li Shi ◽  
Feng Liang ◽  
Yun Hu ◽  
Xue-Dong Wang ◽  
Zhao-Kui Wang ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Lithium Salt ◽  
Light Emitting ◽  
Hole Transporting

The maximum external quantum efficiency of the device is 11.46% using PVK doped Li-TFSI as the hole-transporting layer.

Quantum-dot light-emitting diodes with a perfluorinated ionomer-doped copper-nickel oxide hole transporting layer

Nanoscale ◽  
2018 ◽  
Vol 10 (15) ◽  
pp. 7281-7290 ◽  
Author(s):  
Hyo-Min Kim ◽  
Jeonggi Kim ◽  
Jin Jang
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Nickel Oxide ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Copper Nickel ◽  
Hole Transporting

Herein, we report all solution-processed green quantum-dot light-emitting diodes (G-QLEDs) by introducing a perfluorinated ionomer (PFI, Nafion 117) into quantum dots (QDs) to improve hole injection.

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