Single-Source Thermal Evaporation Growth and the Tuning Surface Passivation Layer Thickness Effect in Enhanced Amplified Spontaneous Emission Properties of CsPb(Br0.5Cl0.5)3 Perovskite Films

High-quality inorganic cesium lead halide perovskite CsPb(Br0.5Cl0.5)3 thin films were successfully achieved through evaporation of the precursors and deposition sequentially by a single-source thermal evaporation system. The different melting points of the precursors were enabled us to evaporate precursors one by one in one trip. The resulting films through its fabrication were smooth and pinhole-free. Furthermore, this technique enabled complete surface coverage by high-quality perovskite crystallization and more moisture stability oppositely of that produce by solution-processed. Then the perovskite films were encapsulated by evaporated a polymethyl methacrylate (PMMA) polymer as a specialized surface passivation approach with various thicknesses. The blue emission, high photoluminescence quantum yield (PLQY), stable, and low threshold of amplified spontaneous emission (ASE) properties of CsPb(Br0.5Cl0.5)3 films in the bulk structure at room temperature were achieved. The effects of the surface-passivation layer and its thickness on the optical response were examined. Detailed analysis of the dependence of ASE properties on the surface passivation layer thickness was performed, and it was determined this achieves performance optimization. The ASE characteristics of bare perovskite thin film were influenced by the incorporation of the PMMA with various thicknesses. The improvement to the surface layer of perovskite thin films compared to that of the bare perovskite thin film was attributed to the combination of thermal evaporation deposition and surface encapsulation. The best results were achieved when using a low PMMA thickness up to 100 nm and reducing the ASE threshold by ~11 μJ/cm2 when compared with free-encapsulation and by ~13 μJ/cm2 when encapsulation occurs at 200 nm or thicker. Compared to the bare CsPb(Br0.5Cl0.5)3, ASE reduced 1.1 times when the PMMA thickness was 100 nm.

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Highly Uniform Large-Area (100 cm2) Perovskite CH3NH3PbI3 Thin-Films Prepared by Single-Source Thermal Evaporation

Coatings ◽

10.3390/coatings8080256 ◽

2018 ◽

Vol 8 (8) ◽

pp. 256 ◽

Cited By ~ 12

Author(s):

Guangxing Liang ◽

Huabin Lan ◽

Ping Fan ◽

Chunfeng Lan ◽

Zhuanghao Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cell ◽

Thermal Evaporation ◽

Perovskite Solar Cell ◽

Stoichiometric Ratio ◽

Single Source ◽

Large Area ◽

Highly Uniform ◽

The Ideal

In this work, we report the reproducible preparation method of highly uniform large-area perovskite CH3NH3PbI3 thin films by scalable single-source thermal evaporation with the area of 100 cm2. The microstructural and optical properties of large-area CH3NH3PbI3 thin films were investigated. The dense, uniform, smooth, high crystallinity of large-area perovskite thin film was obtained. The element ratio of Pb/I was close to the ideal stoichiometric ratio of CH3NH3PbI3 thin film. These films show a favorable bandgap of 1.58 eV, long and balanced carrier-diffusion lengths. The CH3NH3PbI3 thin film perovskite solar cell shows a stable efficiency of 7.73% with almost no hysteresis, indicating a single-source thermal evaporation that is suitable for a large area perovskite solar cell.

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Inorganic and Lead-free CsBi3I10 Thin Film Solar cell Prepared by Single-source Thermal Evaporation

10.21203/rs.3.rs-201822/v1 ◽

2021 ◽

Author(s):

Huabin Lan ◽

Xingye Chen ◽

Ping Fan ◽

Guangxing Liang

Keyword(s):

Thin Film ◽

Thin Films ◽

Solar Cells ◽

Band Gap ◽

Thermal Evaporation ◽

Perovskite Solar Cells ◽

Lead Free ◽

Single Source ◽

Thermal Evaporation Method ◽

Inorganic Lead

Abstract All inorganic lead-free halide perovskites have attracted much attention due to their non-toxic and good band gap. In this paper, we first prepared all inorganic lead-free perovskite CsBi3I10 thin films by single source thermal evaporation deposition. The results show that CsBi3I10 thin films prepared by single source thermal evaporation have layered structure, high purity hexagonal phase and high crystallinity, which are consistent with the theoretical calculation results. The surface of the thin film was compact and uniform, and had high homology with the crystal structure of the evaporation source material. After annealing, the crystallinity of the film was further improved. The band gap of the CsBi3I10 thin film calculated was 1.83 eV, Perovskite solar cells based on CsBi3I10 thin films exhibit an efficiency of up to 0.84%. These results indicate that the proposed single source thermal evaporation method has the potential to prepare high efficiency inorganic lead-free perovskite solar cells.

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Amplified Spontaneous Emission Optimization in Regioregular Poly(3-hexylthiophene) (rrP3HT):poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) Thin Films through Control of the Morphology

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.5b05008 ◽

2015 ◽

Vol 119 (37) ◽

pp. 21620-21625 ◽

Cited By ~ 12

Author(s):

M. Anni ◽

S. Lattante

Keyword(s):

Thin Films ◽

Spontaneous Emission ◽

Amplified Spontaneous Emission ◽

Regioregular Poly

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From radical to triradical thin film processes: the Blatter radical derivatives

Journal of Materials Chemistry C ◽

10.1039/d1tc01541a ◽

2021 ◽

Author(s):

Arrigo Calzolari ◽

Andrzej Rajca ◽

Maria Benedetta Casu

Keyword(s):

Thin Film ◽

Thin Films ◽

Thermal Evaporation ◽

Controlled Environment

We demonstrate the possibility to evaporate Blatter radical derivatives in a controlled environment obtaining thin films that preserve the (poly)radical magnetic character. However, their thermal evaporation is challenging. We analyse...

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Inorganic and lead-free CsBi3I10 thin-film solar cell prepared by single-source thermal evaporation

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05783-z ◽

2021 ◽

Author(s):

Huabin Lan ◽

Xingye Chen ◽

Ping Fan ◽

Guangxing Liang

Keyword(s):

Thin Film ◽

Solar Cell ◽

Thin Film Solar Cell ◽

Thermal Evaporation ◽

Lead Free ◽

Single Source

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Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

MRS Proceedings ◽

10.1557/proc-457-309 ◽

1996 ◽

Vol 457 ◽

Author(s):

R. Banerjee ◽

X. D. Zhang ◽

S. A. Dregia ◽

H. L. Fraser

Keyword(s):

Thin Film ◽

Thin Films ◽

Magnetron Sputtering ◽

Layer Thickness ◽

Thermodynamic Model ◽

Interfacial Reactions ◽

Experimental Results ◽

Structural Transitions ◽

Nanocomposite Thin Film ◽

Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

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