scholarly journals Chemical Solution Deposition of BaxSr1-xTiO3 Thin Films for Energy Storage Applications

Proceedings ◽  
2020 ◽  
Vol 56 (1) ◽  
pp. 9
Author(s):  
Federica Benes ◽  
Mirela Dragomir ◽  
Barbara Malič ◽  
Marco Deluca
Keyword(s):  
Thin Films ◽  
Crystal Growth ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Annealing Conditions ◽  
Different Temperatures ◽  
Energy Storage Applications ◽  
Xrd Techniques

Highly textured Ba0.5Sr0.5TiO3 and Ba0.6Sr0.4TiO3 thin films have been successfully processed using chemical solution deposition (CSD) techniques and annealed at different temperatures to investigate the influence on crystal growth. Microstructure and texture have been evaluated using SEM and XRD techniques. The films showed a homogeneous thickness of ~120 nm and the grain growth seemed to be highly influenced by the annealing temperature. Moreover, by tuning the deposition and annealing conditions, an almost epitaxial growth of Ba0.6Sr0.4TiO3 on the platinized silicon substrate has been achieved. Nevertheless, the samples showed severe cracking due to the strain imposed by the substrate or due to the growing direction.

Annealing temperature effects on (111)-oriented BiFeO3 thin films deposited on Pt/Ti/SiO2/Si by chemical solution deposition

2015 ◽  
Vol 3 (41) ◽  
pp. 10742-10747 ◽  
Author(s):  
Linghua Jin ◽  
Xianwu Tang ◽  
Dongpo Song ◽  
Renhuai Wei ◽  
Jie Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effects ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Multiferroic Material ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

As the most-studied multiferroic material, (111)-oriented BiFeO3 (BFO) thin films are desirable due to the highest polarization in the (111) plane.

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32738-32743 ◽  
Author(s):  
Xianwu Tang ◽  
Ling Hu ◽  
Jie Yang ◽  
Li Chen ◽  
Jianming Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Introducing a La0.5Sr0.5TiO3 buffer layer is beneficial for the microstructures and properties of BiFeO3 thin films on metallic tapes.

Effect of annealing temperature on the thermal transformation to cobalt oxide of thin films obtained via chemical solution deposition

2020 ◽  
Vol 107 ◽  
pp. 104825 ◽  
Author(s):  
M. Martínez-Gil ◽  
D. Cabrera-German ◽  
M.I. Pintor-Monroy ◽  
J.A. García-Valenzuela ◽  
M. Cota-Leal ◽  
...  
Keyword(s):  
Thin Films ◽  
Cobalt Oxide ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Thermal Transformation ◽  
Chemical Solution ◽  
Solution Deposition

(Pb, Sm)TiO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING A Bi2Ti2O7 BUFFER LAYER

2004 ◽  
Vol 11 (02) ◽  
pp. 211-215
Author(s):  
CHANGHONG YANG ◽  
ZHUO WANG ◽  
XIUFENG CHENG ◽  
HONGXIA LI ◽  
JIANRU HAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Hysteresis Curve ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
X Ray ◽  
Atomic Force ◽  
Clockwise Hysteresis

A thin-film bilayer structure consisting of polycrystalline Pb 0.85 Sm 0.1 TiO 3 and preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution deposition technique. Thin films were deposited by spin-coating. The structural properties of the films were examined by X-ray diffraction. The surface morphology and quality were studied by using an atomic force microscope. The films exhibit a good insulating property and resistance to breakdown. The clockwise hysteresis curve is referred to as polarization type switching, and the memory window is about 3.5 V. The accumulation capacitance and dielectric loss decrease with the increased annealing temperature. The ( Pb, Sm ) TiO 3/ Bi 2 Ti 2 O 7 films in the "on" and "off" states are relatively stable.

scholarly journals KAJIAN SIFAT OPTIK FILM TIPIS BST DIDADAH NIOBIUM DAN TANTALUM

2016 ◽  
Vol 1 (1) ◽  
pp. 9
Author(s):  
Farida Huriawati ◽  
Irzaman Irzaman
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Electronic Circuit ◽  
Rotation Velocity ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Barium Strontium

<p><em>In this research thin films of Barium Strontium Titanate (BST) has been synthesis with different compositions Ba<sub>0,5</sub>Sr<sub>0,5</sub>TiO<sub>3</sub> and Ba<sub>0,25</sub>Sr<sub>0,75</sub>TiO<sub>3</sub> which doped by Nb<sub>2</sub>O<sub>5</sub> (Niobium) and Ta<sub>2</sub>O<sub>5</sub> (Tantalum) on Si (100) type-p substrate. Thin films were produced by chemical solution deposition technique (CSD) and spin coating technique with annealing temperature at 850<sup>o</sup>C, 900<sup>o</sup>C dan 950<sup>o</sup>C. Rotation velocity at 3000 rpm and time of rotation is 30 seconds. Characterization of Films is optic Characterization (absorbance ana reflectance). From the Characterizations were obtained BNST thin film with 5% doping and anneling temperature at 850<sup>0</sup>C as photodiode light sensor which applied in electronic circuit. </em></p>

scholarly journals Chemical Solution Deposition of La-Substituted BiFe0.5Sc0.5O3 Perovskite Thin Films on Different Substrates

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 307
Author(s):  
Diana Griesiute ◽  
Dovydas Karoblis ◽  
Lina Mikoliunaite ◽  
Aleksej Zarkov ◽  
Andrei N. Salak ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Cost Effective ◽  
Deposition Process ◽  
Stability Study ◽  
Fused Silica ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Optimal Annealing Temperature ◽  
Xrd Patterns

In the present work, polycrystalline Bi0.67La0.33Fe0.5Sc0.5O3 thin films were synthesized using a simple and cost-effective chemical solution deposition process employing the spin coating technique. In order to check the feasibility of the fabrication of thin films on various types of substrates, the films were deposited on Pt-coated silicon, silicon, sapphire, corundum, fused silica and glass. Based on the results of thermogravimetric analysis of precursor and thermal stability study, it was determined that the optimal annealing temperature for the formation of perovskite structure is 600 °C. It was observed that the relative intensity of the pseudocubic peaks (001)p and (011)p in the XRD patterns is influenced by the nature of substrates, suggesting that the formed crystallites have some preferred orientation. Roughness of the films was determined to be dependent on the nature of the substrate.

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