scholarly journals Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4498 ◽  
Author(s):  
Xuelei Li ◽  
Xiaofeng Zhao ◽  
Dianzhong Wen
Keyword(s):  
Magnetic Field ◽  
Magnetic Flux ◽  
Silicon On Insulator ◽  
Magnetic Field Sensor ◽  
Circuit Board ◽  
Oxide Semiconductor ◽  
Finite Element Software ◽  
Field Sensor ◽  
Hall Element ◽  
Sensitive Axis

A magnetic field sensor with a new concentrating-conducting magnetic flux structure (CCMFS) is proposed in this paper, using a silicon-on insulator (SOI) Hall element fabricated by complementary metal oxide semiconductor (CMOS) technology as a magnetic sensitive unit. By fixing the CCMFS above the Hall element packaged on a printed circuit board (PCB) based on inner-connect wire bonding technology, a non-magnetized package can subsequently be obtained. To analyze the inner magnetic field vector distribution of the CCMFS, a simulation model was built based on a finite element software, where the CCMFS was processed using Ni-Fe alloys material by a low speed wire-cut electric discharge technology. The test results showed that the measurement of magnetic fields along a sensitive and a non-sensitive axis can be achieved when VDD = 5.0 V at room temperature, with magnetic sensitivities of 122 mV/T and 132 mV/T in a testing range from −30 mT to 30 mT, respectively. This study makes it possible to not only realize the detection of magnetic field, but also to significantly improve the sensitivity of the sensor along a non-sensitive axis.

Designs and Characterizations of Soft Magnetic Flux Guides in a 3-D Magnetic Field Sensor

2012 ◽  
Vol 48 (4) ◽  
pp. 1481-1484 ◽  
Author(s):  
Jue Chen ◽  
Marc C. Wurz ◽  
Alexander Belski ◽  
Lutz Rissing
Keyword(s):  
Magnetic Field ◽  
Magnetic Flux ◽  
Magnetic Field Sensor ◽  
Soft Magnetic ◽  
Field Sensor

Effects of Hall Output Probes Shape on Magnetic Characterization of Hall Magnetic Field Sensor Based on MOSFET

2015 ◽  
Vol 645-646 ◽  
pp. 595-599
Author(s):  
Xiao Feng Zhao ◽  
Qian Ru Lin ◽  
Ai Lin Mu ◽  
Dian Zhong Wen ◽  
Hong Quan Zhang
Keyword(s):  
Magnetic Field ◽  
Magnetic Characteristic ◽  
Channel Length ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
High Resistivity ◽  
Length Width ◽  
Field Sensor ◽  
Magnetic Sensitivity ◽  
The Magnetic Field

This paper presents the effects of Hall output probes shape on the magnetic characteristic of magnetic field sensors with Hall output probes, which is based on metal-oxide-semiconductor field effect transistor (MOSFET). The Hall sensor chips are fabricated on <100> silicon substrates with high resistivity by using CMOS technology. Experiment results show that, when drain-source voltage VDS=5.0 V, the magnetic sensitivity of the magnetic field sensor with the concave Hall output probes and channel length-width ratios of 160 μm/80 μm, 320 μm/80 μm and 480 μm/80 μm are 53.3 mV/T, 32.54 mV/T and 20.32 mV/T, respectively. At the same condition, the magnetic sensitivity of the magnetic field sensor with convex Hall output probes and the channel length-width ratio of 160 μm/80 μm is 76.8 mV/T.

scholarly journals Development of a High-Performance Magnetic Field Sensor and Its Application to a Magnetic Field Visualization System Using the Augmented Reality Technique

2019 ◽  
Vol 2019 ◽  
pp. 1-9
Author(s):  
Hisahide Nakamura ◽  
Yukio Mizuno ◽  
Shrinathan Esakimuthu Pandarakone
Keyword(s):  
Magnetic Field ◽  
Augmented Reality ◽  
Magnetic Flux ◽  
Flux Density ◽  
High Performance ◽  
Magnetic Field Sensor ◽  
Magnetic Flux Density ◽  
Visualization System ◽  
Field Sensor ◽  
The Magnetic Field

Two- or three-dimensional visualization of magnetic flux density distribution around sources is quite informative for understanding the field environment intuitively. Measurement of magnetic flux density, as well as positioning of measuring points in space, has to be performed in a short time because temporal variation in the source current results in different field environments. It is also valuable to obtain the frequency spectrum of the magnetic field simultaneously at the time of field measurement, especially for sources generating high-frequency components like inverter-driven equipment. This paper develops a high-performance magnetic field sensor which satisfies the above requirements. And, as an application of it, the magnetic field visualization system using the augmented reality (AR) technique is proposed by combining two sensors: one is a magnetic field sensor described above, and the other is a Kinect sensor which has a skeleton tracking function as position determination.

An Integrated Pressure and Magnetic Field Sensor Based on Piezoresistance Effect

2015 ◽  
Vol 645-646 ◽  
pp. 610-615
Author(s):  
Tong Wu ◽  
Xiao Feng Zhao ◽  
Xiang Hong Yang ◽  
Dian Zhong Wen ◽  
Gang Li
Keyword(s):  
Magnetic Field ◽  
Metal Oxide ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Cmos Technology ◽  
External Pressure ◽  
Metal Oxide Semiconductor ◽  
Magnetic Field Sensor ◽  
Oxide Semiconductor ◽  
Field Sensor

An integrated pressure and magnetic field sensor based on piezoresistance effect is proposedin this paper. The integrated sensor is composed of a C-type silicon cup, ferromagnetic materialand Wheatstone bridge constructed by four metal oxide semiconductor field effect transistors(MOSFETs) channel resistances as piezoresistances. Based on the piezoresistance effect of channelresistances, the measurement to the external pressure P and magnetic field B can be achieved by thesensor. Through using complementary metal oxide semiconductor (CMOS) technology and microelectromechnicalsystem (MEMS) technology, the sensor chip was designed and fabricated on <100>orientation silicon substrates, locating the ferromagnetic material on its squared silicon membranecenter. The experimental results show that when supply voltage of the sensor is 2.0 V, the pressuresensitivity of sensor is 0.39 mV/kPa (B=0 T), and the magnetic field sensitivity of sensor is 1.48 mV/T(P=0 kPa).

Magnetic Field Sensor Based on a Single Josephson Junction With a Multilayer Ferromagnet/Normal Metal Barrier

2021 ◽  
Vol 31 (5) ◽  
pp. 1-5
Author(s):  
Ivan P. Nevirkovets ◽  
Mikhail A. Belogolovskii ◽  
Oleg A. Mukhanov ◽  
John B. Ketterson
Keyword(s):  
Magnetic Field ◽  
Josephson Junction ◽  
Normal Metal ◽  
Magnetic Field Sensor ◽  
Field Sensor ◽  
Metal Barrier

Test bench for calibration of magnetic field sensor prototypes for COMPASS-U tokamak

2021 ◽  
Vol 168 ◽  
pp. 112467
Author(s):  
Andre Torres ◽  
Karel Kovarik ◽  
Tomas Markovic ◽  
Jiri Adamek ◽  
Ivan Duran ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Test Bench ◽  
Magnetic Field Sensor ◽  
Field Sensor

High-sensitivity fiber optic magnetic field sensor based on lossy mode resonance and hollow core-offset structure

2021 ◽  
pp. 1-12
Author(s):  
Xue-Peng Jin ◽  
Hong-Zhi Sun ◽  
Shuo-Wei Jin ◽  
Wan-Ming Zhao ◽  
Jing-Ren Tang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fiber Optic ◽  
High Sensitivity ◽  
Magnetic Field Sensor ◽  
Hollow Core ◽  
Field Sensor
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