scholarly journals Area-Efficient Post-Processing Circuits for Physically Unclonable Function with 2-Mpixel CMOS Image Sensor

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6079
Author(s):  
Shunsuke Okura ◽  
Masanori Aoki ◽  
Tatsuya Oyama ◽  
Masayoshi Shirahata ◽  
Takeshi Fujino ◽  
...  
Keyword(s):  
Circuit Design ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Post Processing ◽  
Verilog Hdl ◽  
Area Overhead ◽  
Pixel Array ◽  
Data Source ◽  
Advanced Post Processing ◽  
Model Circuit

In order to realize image information security starting from the data source, challenge–response (CR) device authentication, based on a Physically Unclonable Function (PUF) with a 2 Mpixel CMOS image sensor (CIS), is studied, in which variation of the transistor in the pixel array is utilized. As each CR pair can be used only once to make the CIS PUF resistant to the modeling attack, CR authentication with CIS can be carried out 4050 times, with basic post-processing to generate the PUF ID. If a larger number of authentications is required, advanced post-processing using Lehmer encoding can be utilized to carry out authentication 14,858 times. According to the PUF performance evaluation, the authentication error rate is less than 0.001 ppm. Furthermore, the area overhead of the CIS chip for the basic and advanced post-processing is only 1% and 2%, respectively, based on a Verilog HDL model circuit design.

A CMOS Image Sensor with a Novel Passive Pixel Array and High Precision Current Amplifier for a Compact Digital X-ray Detector

2020 ◽  
Vol 10 (11) ◽  
pp. 2745-2753
Author(s):  
Jimin Cheon ◽  
Dongmyung Lee ◽  
Hojong Choi
Keyword(s):  
High Precision ◽  
Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Total Power ◽  
Cmos Process ◽  
Current Amplifier ◽  
X Ray ◽  
Total Power Consumption ◽  
Pixel Array

An active pixel sensor (APS) in a digital X-ray detector is the dominant circuitry for a CMOS image sensor (CIS) despite its lower fill factor (FF) compared to that of a passive pixel sensor (PPS). Although the PPS provides higher FF, its overall signal-to-noise ratio (SNR) is lower than that of the APS. The required high resolution and small focal plane can be achieved by reducing the number of transistors and contacts per pixel. We proposed a novel passive pixel array and a high precision current amplifier to improve the dynamic range (DR) without minimizing the sensitivity for diagnostic compact digital X-ray detector applications. The PPS can be an alternative to improve the FF. However, size reduction of the feedback capacitor causes degradation of SNR performance. This paper proposes a novel PPS based on readout and amplification circuits with a high precision current amplifier to minimize performance degradation. The expected result was attained with a 0.35-μm CMOS process parameter with power supply voltage of 3.3 V. The proposed PPS has a saturation signal of 1.5 V, dynamic range of 63.5 dB, and total power consumption of 13.47 mW. Therefore, the proposed PPS readout circuit improves the dynamic range without sacrificing the sensitivity.

Research on Video Information Acquisition Module of OV7620

2011 ◽  
Vol 216 ◽  
pp. 29-33
Author(s):  
Lei Xu ◽  
Wei Lu
Keyword(s):  
Information Acquisition ◽  
Programming Model ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Industrial Applications ◽  
Video Monitor ◽  
Verilog Hdl ◽  
Video Information ◽  
Site Monitoring ◽  
Reliable Source

In order to meet real-time and quick requirements for video information acquiring and processing, this paper introduces a hardware platform based on Altera's Cyclone series EP1C12Q240C8, to descript the driving timing for CMOS image sensor OV7620 with Verilog HDL language to acquire video information. The system uses SCCB programming model, establishes communication between FPGA chip and CMOS image sensor to achieve the control and acquisition of the signal. In order to achieve operational requirements in different environments and needs, the corresponding registers and the controller are set within CMOS image sensor. Experimental results show that the control of the CMOS image sensor OV7620 flexibly provides a stable and reliable source of raw information for video monitor, industrial applications such as on-site monitoring.

Readout circuit design of the retina-like CMOS image sensor

2015 ◽  
Author(s):  
Fengmei Cao ◽  
Shengyu Song ◽  
Tingzhu Bai ◽  
Nan Cao
Keyword(s):  
Circuit Design ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Readout Circuit

Three-dimensional CMOS image sensor with 4x64 pixel array

2004 ◽  
Author(s):  
Omar M. Elkhalili ◽  
Olaf Schrey ◽  
Ralf F. Jeremias ◽  
Peter Mengel ◽  
Martin Petermann ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pixel Array

Pixel circuit design of CMOS image sensor

2000 ◽  
Author(s):  
Wenru Zhang ◽  
Suntao Wu ◽  
Donghui Guo ◽  
Gerard Parr
Keyword(s):  
Circuit Design ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Pixel Circuit

Development of Wafer Level Chip Size Packaging Process and its Application to the CMOS Image Sensor Module for Medical Device

2017 ◽  
Vol 137 (2) ◽  
pp. 48-58
Author(s):  
Noriyuki Fujimori ◽  
Takatoshi Igarashi ◽  
Takahiro Shimohata ◽  
Takuro Suyama ◽  
Kazuhiro Yoshida ◽  
...  
Keyword(s):  
Medical Device ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Wafer Level ◽  
Packaging Process ◽  
Sensor Module ◽  
Chip Size

An Over 120dB Dynamic Range Linear Response Single Exposure CMOS Image Sensor with Two-stage Lateral Overflow Integration Trench Capacitors

2020 ◽  
Vol 2020 (7) ◽  
pp. 143-1-143-6 ◽  
Author(s):  
Yasuyuki Fujihara ◽  
Maasa Murata ◽  
Shota Nakayama ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Linear Response ◽  
Dynamic Range ◽  
Signal To Noise Ratio ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Signal To Noise ◽  
Single Exposure ◽  
Two Stage ◽  
Noise Ratio ◽  
Maximum Signal

This paper presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration trench capacitors (LOFITreCs) exhibiting over 120dB dynamic range with 11.4Me- full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70dB. The measured SNR at all switching points were over 35dB thanks to the proposed two-stage LOFITreCs.

Extending Electrical Scanning Probe Microscopy Measurements of Semiconductor Devices Using Microwave Impedance Microscopy

2015 ◽  
Author(s):  
Benedict Drevniok ◽  
St. John Dixon-Warren ◽  
Oskar Amster ◽  
Stuart L Friedman ◽  
Yongliang Yang
Keyword(s):  
Scanning Probe Microscopy ◽  
Semiconductor Devices ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Scanning Probe ◽  
Cross Sectional ◽  
Probe Microscopy ◽  
Dopant Profiling ◽  
Capacitance Voltage

Abstract Scanning microwave impedance microscopy was used to analyze a CMOS image sensor sample to reveal details of the dopant profiling in planar and cross-sectional samples. Sitespecific capacitance-voltage spectroscopy was performed on different regions of the samples.

A 10-bit ratio-independent cyclic ADC with offset canceling for a CMOS image sensor

2014 ◽  
Vol 35 (3) ◽  
pp. 035005 ◽  
Author(s):  
Kaiming Nie ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Zhaorui Jiang
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Cyclic Adc
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