Integration of Demand Response and Photovoltaic Resources in Residential Segments

The development of renewable sources in residential segments is basic to achieve a sustainable energy scenario in the horizon 2030–2050 because these segments explain around 25% of the final energy consumption. Demand Response and its effective coordination with renewable are additional concerns for residential segments. This paper deals with two problems: the demonstration of cost-effectiveness of renewables in three different scenarios, and the application of the flexibility of demand, performing as energy storage systems, to efficiently manage the generation of renewable sources while improving benefits and avoiding penalties for the customer. A residential customer in Spain has been used as example. The work combines the use of a commercial simulator to obtain photovoltaic generation, the monitoring of customer to obtain demand patterns, and the development of a Physically-Based Model to evaluate the capability of demand to follow self-generation. As a main result, the integration of models (load/generation), neglected in practice in other approaches in the literature, allows customers to improve revenue up to 20% and reach a basic but important knowledge on how they can modify the demand, development of new skills and, in this way, learn how to deal with the characteristics and limitations of both Demand and Generation when a customer becomes a prosumer. This synergy amongst demand and generation physically-based models boosts the possibilities of customers in electricity markets.

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Picturing and modeling catchments by representative hillslopes

Hydrology and Earth System Sciences ◽

10.5194/hess-21-1225-2017 ◽

2017 ◽

Vol 21 (2) ◽

pp. 1225-1249 ◽

Cited By ~ 19

Author(s):

Ralf Loritz ◽

Sibylle K. Hassler ◽

Conrad Jackisch ◽

Niklas Allroggen ◽

Loes van Schaik ◽

...

Keyword(s):

Expert Knowledge ◽

Water Dynamics ◽

Rainfall Runoff ◽

Data Set ◽

Physically Based Model ◽

Optimal Representation ◽

Physically Based ◽

Physically Based Models ◽

Streamflow Data ◽

Runoff Events

Abstract. This study explores the suitability of a single hillslope as a parsimonious representation of a catchment in a physically based model. We test this hypothesis by picturing two distinctly different catchments in perceptual models and translating these pictures into parametric setups of 2-D physically based hillslope models. The model parametrizations are based on a comprehensive field data set, expert knowledge and process-based reasoning. Evaluation against streamflow data highlights that both models predicted the annual pattern of streamflow generation as well as the hydrographs acceptably. However, a look beyond performance measures revealed deficiencies in streamflow simulations during the summer season and during individual rainfall–runoff events as well as a mismatch between observed and simulated soil water dynamics. Some of these shortcomings can be related to our perception of the systems and to the chosen hydrological model, while others point to limitations of the representative hillslope concept itself. Nevertheless, our results confirm that representative hillslope models are a suitable tool to assess the importance of different data sources as well as to challenge our perception of the dominant hydrological processes we want to represent therein. Consequently, these models are a promising step forward in the search for the optimal representation of catchments in physically based models.

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A physically based model for the isothermal martensitic transformation in a maraging steel

Journal de Physique IV (Proceedings) ◽

10.1051/jp4:2003919 ◽

2003 ◽

Vol 112 ◽

pp. 437-440 ◽

Cited By ~ 1

Author(s):

S. O. Kruijver ◽

H. S. Blaauw ◽

J. Beyer ◽

J. Post

Keyword(s):

Martensitic Transformation ◽

Maraging Steel ◽

Physically Based Model ◽

Physically Based ◽

Isothermal Martensitic Transformation

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A new approach to mapping landslide hazards: a probabilistic integration of empirical and physically based models in the North Cascades of Washington, USA

Natural Hazards and Earth System Science ◽

10.5194/nhess-19-2477-2019 ◽

2019 ◽

Vol 19 (11) ◽

pp. 2477-2495

Author(s):

Ronda Strauch ◽

Erkan Istanbulluoglu ◽

Jon Riedel

Keyword(s):

Statistical Approach ◽

Joint Probability ◽

North Cascades ◽

Physically Based Model ◽

New Approach ◽

The North ◽

Debris Avalanches ◽

Landslide Hazards ◽

Infinite Slope Stability Model ◽

Physically Based

Abstract. We developed a new approach for mapping landslide hazards by combining probabilities of landslide impacts derived from a data-driven statistical approach and a physically based model of shallow landsliding. Our statistical approach integrates the influence of seven site attributes (SAs) on observed landslides using a frequency ratio (FR) method. Influential attributes and resulting susceptibility maps depend on the observations of landslides considered: all types of landslides, debris avalanches only, or source areas of debris avalanches. These observational datasets reflect the detection of different landslide processes or components, which relate to different landslide-inducing factors. For each landslide dataset, a stability index (SI) is calculated as a multiplicative result of the frequency ratios for all attributes and is mapped across our study domain in the North Cascades National Park Complex (NOCA), Washington, USA. A continuous function is developed to relate local SI values to landslide probability based on a ratio of landslide and non-landslide grid cells. The empirical model probability derived from the debris avalanche source area dataset is combined probabilistically with a previously developed physically based probabilistic model. A two-dimensional binning method employs empirical and physically based probabilities as indices and calculates a joint probability of landsliding at the intersections of probability bins. A ratio of the joint probability and the physically based model bin probability is used as a weight to adjust the original physically based probability at each grid cell given empirical evidence. The resulting integrated probability of landslide initiation hazard includes mechanisms not captured by the infinite-slope stability model alone. Improvements in distinguishing potentially unstable areas with the proposed integrated model are statistically quantified. We provide multiple landslide hazard maps that land managers can use for planning and decision-making, as well as for educating the public about hazards from landslides in this remote high-relief terrain.

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Including Demand Response and Battery Energy Storage Systems in Uniform Marginal Price Based Electricity Markets

2021 IEEE Power & Energy Society Innovative Smart Grid Technologies Conference (ISGT) ◽

10.1109/isgt49243.2021.9372260 ◽

2021 ◽

Author(s):

Nitin Padmanabhan ◽

Kankar Bhattacharya

Keyword(s):

Energy Storage ◽

Demand Response ◽

Electricity Markets ◽

Storage Systems ◽

Energy Storage Systems ◽

Battery Energy Storage ◽

Battery Energy Storage Systems ◽

Battery Energy ◽

Marginal Price

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New physically based model for thermal induced initial stress in 3D for silicon germanium films after deposition

COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering ◽

10.1108/compel-11-2013-0390 ◽

2014 ◽

Vol 33 (6) ◽

pp. 2121-2138 ◽

Cited By ~ 1

Author(s):

Abderrazzak El Boukili

Keyword(s):

Thermal Expansion ◽

Initial Stress ◽

Silicon Germanium ◽

Rate Of Change ◽

Thermal Mismatch ◽

Electronic Band ◽

Physically Based Model ◽

Content Type ◽

Physically Based ◽

Pmos Transistor

Purpose – The purpose of this paper is to provide a new three dimension physically based model to calculate the initial stress in silicon germanium (SiGe) film due to thermal mismatch after deposition. We should note that there are many other sources of initial stress in SiGe films or in the substrate. Here, the author is focussing only on how to model the initial stress arising from thermal mismatch in SiGe film. The author uses this initial stress to calculate numerically the resulting extrinsic stress distribution in a nanoscale PMOS transistor. This extrinsic stress is used by industrials and manufacturers as Intel or IBM to boost the performances of the nanoscale PMOS and NMOS transistors. It is now admitted that compressive stress enhances the mobility of holes and tensile stress enhances the mobility of electrons in the channel. Design/methodology/approach – During thermal processing, thin film materials like polysilicon, silicon nitride, silicon dioxide, or SiGe expand or contract at different rates compared to the silicon substrate according to their thermal expansion coefficients. The author defines the thermal expansion coefficient as the rate of change of strain with respect to temperature. Findings – Several numerical experiments have been used for different temperatures ranging from 30 to 1,000°C. These experiments did show that the temperature affects strongly the extrinsic stress in the channel of a 45 nm PMOS transistor. On the other hand, the author has compared the extrinsic stress due to lattice mismatch with the extrinsic stress due to thermal mismatch. The author found that these two types of stress have the same order (see the numerical results on Figures 4 and 12). And, these are great findings for semiconductor industry. Practical implications – Front-end process induced extrinsic stress is used by manufacturers of nanoscale transistors as the new scaling vector for the 90 nm node technology and below. The extrinsic stress has the advantage of improving the performances of PMOSFETs and NMOSFETs transistors by enhancing mobility. This mobility enhancement fundamentally results from alteration of electronic band structure of silicon due to extrinsic stress. Then, the results are of great importance to manufacturers and industrials. The evidence is that these results show that the extrinsic stress in the channel depends also on the thermal mismatch between materials and not only on the material mismatch. Originality/value – The model the author is proposing to calculate the initial stress due to thermal mismatch is novel and original. The author validated the values of the initial stress with those obtained by experiments in Al-Bayati et al. (2005). Using the uniaxial stress generation technique of Intel (see Figure 2). Al-Bayati et al. (2005) found experimentally that for 17 percent germanium concentration, a compressive initial stress of 1.4 GPa is generated inside the SiGe layer.

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