scholarly journals Stable and Efficient Red Perovskite Light-Emitting Diodes Based on Ca2+-Doped CsPbI3 Nanocrystals

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Wei Shen ◽  
Jianbin Zhang ◽  
Ruimin Dong ◽  
Yanfeng Chen ◽  
Liu Yang ◽  
...  

α-CsPbI3 nanocrystals (NCs) with poor stability prevent their wide applications in optoelectronic fields. Ca2+ (1.00 Å) as a new B-site doping ion can successfully boost CsPbI3 NC performance with both improved phase stability and optoelectronic properties. With a Ca2+/Pb2+ ratio of 0.40%, both phase and photoluminescence (PL) stability could be greatly enhanced. Facilitated by increased tolerance factor, the cubic phase of its solid film could be maintained after 58 days in ambient condition or 4 h accelerated aging process at 120°C. The PL stability of its solution could be preserved to 83% after 147 days in ambient condition. Even using UV light to accelerate aging, the T50 of PL could boost 1.8-folds as compared to CsPbI3 NCs. Because Ca2+ doping can dramatically decrease defect densities of films and reduce hole injection barriers, the red light-emitting diodes (LEDs) exhibited about triple enhancement for maximum the external quantum efficiency (EQE) up to 7.8% and 2.2 times enhancement for half-lifetime of LED up to 85 min. We believe it is promising to further explore high-quality CsPbI3 NC LEDs via a Ca2+-doping strategy.

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.


2019 ◽  
Vol 8 (2) ◽  
pp. 1901430 ◽  
Author(s):  
Tae Ho Lee ◽  
Tae Hoon Park ◽  
Hee Woong Shin ◽  
Noritoshi Maeda ◽  
Masafumi Jo ◽  
...  

2020 ◽  
Vol 19 (11) ◽  
pp. 1224-1229 ◽  
Author(s):  
Alim Abdurahman ◽  
Timothy J. H. Hele ◽  
Qinying Gu ◽  
Jiangbin Zhang ◽  
Qiming Peng ◽  
...  

2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


2007 ◽  
Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
Author(s):  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
Mikhail Gaevski ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document