Room-temperature intrinsic excitonic luminescence from a hexagonal boron nitride thin film grown on a sapphire substrate by low-pressure chemical vapor deposition using BCl3 as a boron source

2021 ◽  
Author(s):  
Naoki Umehara ◽  
Takurou Adachi ◽  
Atsushi Masuda ◽  
Tetsuya KOUNO ◽  
Hiroko KOMINAMI ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Boron Source ◽  
Excitonic Luminescence

Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

Nano Letters ◽  
2010 ◽  
Vol 10 (10) ◽  
pp. 4134-4139 ◽  
Author(s):  
Yumeng Shi ◽  
Christoph Hamsen ◽  
Xiaoting Jia ◽  
Ki Kang Kim ◽  
Alfonso Reina ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor

Epitaxially Grown Hexagonal Boron Nitride Films on Sapphire and Silicon Substrates

2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Pressure Chemical ◽  
Boron Source ◽  
Α Al2o3 ◽  
Boron Nitride Films

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.

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