Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition

Author(s):  
Xi Chen ◽  
Chunbo Tan ◽  
Xiaohang Liu ◽  
Kairan Luan ◽  
Yufeng Guan ◽  
...  
2020 ◽  
Vol 843 ◽  
pp. 90-96
Author(s):  
Xi Chen ◽  
Chun Bo Tan ◽  
Kai Ran Luan ◽  
Shuai Wang ◽  
Fang Ye Li ◽  
...  

Hexagonal boron nitride (hBN) films were epitaxially grown on (100)-Oriented silicon and c-plane sapphire (α-Al2O3) substrates via a low-pressure chemical vapor deposition (LPCVD) method with boron trichloride (BCl3) and ammonia (NH3) as the boron source and nitrogen source. Crystalline quality differences between hBN films grown on different substrates are studied and discussed by XPS, Raman spectroscopy, XRD and SEM characterizations. All the characterization results indicate that the sapphire substrate is more suitable for epitaxial growth of hBN films than silicon substrates.


ACS Nano ◽  
2011 ◽  
Vol 5 (9) ◽  
pp. 7303-7309 ◽  
Author(s):  
Peter Sutter ◽  
Jayeeta Lahiri ◽  
Peter Albrecht ◽  
Eli Sutter

2013 ◽  
Vol 537 ◽  
pp. 58-62 ◽  
Author(s):  
Fang Ye ◽  
Li Tong Zhang ◽  
Yong Sheng Liu ◽  
Meng Su ◽  
Lai Fei Cheng ◽  
...  

Boron nitride (BN) coatings were deposited on carbon substrates by low pressure chemical vapor deposition (LPCVD) in a large temperature range of 650~1200 °C, employing BCl3-NH3-H2 reaction system. The effects of depositing temperature on the yield, control step of deposition progress (deposition mechanism), microstructure, and crystallization degree of BN coating were investigated. Results show that BN deposition rate first increases and then decreases as the rising temperature and the maximum deposition rate occurs at 900~1000 °C. By the determination of the Arrenius relationship, there are three temperature regions with different active energies and controlled by different deposition mechanisms, i.e. chemical reaction, mass transport and depletion of reactants. Through the surface morphology observation by scanning electron microscopy (SEM), chemical composition analyses by energy dispersion spectroscopy (EDS) and crystallization degree and grain size comparison by Raman spectroscopy, it can be drawn that interphase-used BN is suitable to be deposited at 1000 °C.


2012 ◽  
Vol 711 ◽  
pp. 61-65 ◽  
Author(s):  
Sai Jiao ◽  
Marc Portail ◽  
Jean François Michaud ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.


2016 ◽  
Vol 652 ◽  
pp. 27-31 ◽  
Author(s):  
Liangjie Wang ◽  
Taotao Li ◽  
Lin Ling ◽  
Jie Luo ◽  
Kai Zhang ◽  
...  

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