Transformation of CaSi overgrowth domains to the CaSi2 crystal phase via vacuum annealing
Keyword(s):
Abstract The phase transformation of overgrown CaSi crystal on an (00l)-oriented epitaxial CaSi2 film was studied using high-angle annular dark-field scanning transmission electron microscopy. After annealing at 450°C under vacuum conditions, the CaSi domain transformed to the CaSi2 phase with thin Si layers. The transformed CaSi2 crystal formed epitaxially along the under-layer epitaxial CaSi2 film. The results suggest that Ca atoms in the overgrown CaSi domain diffused to the outermost passivated silicon oxide layer during the low-temperature vacuum anneal.
2016 ◽
Vol 34
(4)
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pp. 041602
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2014 ◽
Vol 34
(10)
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pp. 2285-2297
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2019 ◽
Vol 75
(3)
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pp. 442-448