scholarly journals Design of Low Power and High Speed Decoder and Priority Encoder using Carbon Nanotube Field Effect Transistor for Binary Content Addressable Memory Array

In this paper, design of Positive Feedback Adiabatic Logic (PFAL) based decoder and priority encoder using Carbon Nanotube Field Effect Transistor (CNTFET) for Binary Content Addressable Memory (BCAM) array is presented. The optimum set of CNTFET parameters such as number of tubes, chirality vector, pitch, dielectric constant and dielectric materials for low power and high speed encoder and decoder is used. The performance of proposed decoder and priority encoder is analyzed for average power, peak power and delay. Simulation results show that the proposed circuits outperforms compared to that of CMOS technology based circuits. The average power and peak power of the proposed decoder and priority encoder are in the range of µW while the range of values for CMOS based decoder are mW. The average delay of the proposed decoder is improved by 35.96% compared to that of CMOS based decoder. The average delay of the proposed priority encoder is improved by 30.77% compared to that of CMOS based priority encoder. All simulations are conducted for both CMOS and CNTFET based decoder and Priority encoder in HSPICE at 32 nm technology.

This paper explains the detailed structure as well as performance of DG-CNTFET (Double Gate Carbon Nanotube Field Effect Transistor) and its performance is compared with the DG-MOSFET (Double Gate Metal Oxide Semiconductor Field Effect Transistor). Various parameters like I-V characteristics, ON current, OFF current and ON to OFF current ratio have been evaluated using nano-TCAD ViDES. Also, the transport description of DG-MOSFET and DG-CNTFET has been described in detail. It has been observed that DG-CNTFET has lower OFF current and higher ON current in comparison to the DG-MOSFET. The higher ON current of DG-CNTFET depicts that it requires less time to turn on the device in comparison with DG-MOSFET. Also, OFF current of the DG-CNTFET is lesser as compared to MOSFET. The DG-CNTFET’s higher ON to OFF current ratio outperforms the DG-MOSFET in term of switching speed of the device. It is proposed that CNTFET can be used as an alternative of MOSFETs for high speed Integrated Circuit (IC) design.


2021 ◽  
Author(s):  
Salomé Forel ◽  
Leandro Sacco ◽  
Alice Castan ◽  
Ileana Florea ◽  
Costel Sorin Cojocaru

We design a gas sensor by combining two SWCNT-FET devices in an inverter configuration enabling a better system miniaturization together with a reduction of power consumption and ease of data processing.


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