scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

Compact Modeling of Short-Channel Effects in Staggered Organic Thin-Film Transistors

2020 ◽  
Vol 67 (11) ◽  
pp. 5082-5090
Author(s):  
Jakob Pruefer ◽  
Jakob Leise ◽  
Ghader Darbandy ◽  
Aristeidis Nikolaou ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Compact Modeling ◽  
Short Channel Effects ◽  
Organic Thin Film ◽  
Short Channel ◽  
Channel Effects

Extracting the Device Parameters from Organic Thin Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Eung Seok Park ◽  
Pil Soo Kang ◽  
Gyu Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Mathematical Expressions ◽  
Current Voltage ◽  
Fitting Procedures ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous

ABSTRACTOrganic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

Suppression of short channel effect in organic thin film transistors

2007 ◽  
Vol 91 (11) ◽  
pp. 113508 ◽  
Author(s):  
K. Tukagoshi ◽  
F. Fujimori ◽  
T. Minari ◽  
T. Miyadera ◽  
T. Hamano ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Short Channel Effect ◽  
Channel Effect

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

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