Extracting the Device Parameters from Organic Thin Film Transistors

2006 ◽  
Vol 965 ◽  
Author(s):  
Eung Seok Park ◽  
Pil Soo Kang ◽  
Gyu Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Mathematical Expressions ◽  
Current Voltage ◽  
Fitting Procedures ◽  
Voltage Dependent ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous

ABSTRACTOrganic thin film transistors(OTFTs) were simulated by a SPICE model adopted in hydrogenated amorphous TFTs(a-Si:H). The gate voltage-dependent mobilities were assumed to fit the representative current-voltage characteristics. The optimal fitting procedures were suggested to compare the experimental data with the mathematical expressions used in the amorphous TFTs. Each SPICE parameter explains the gate dependent mobilities in OTFTs originating from the distribution of trap sites for the hopping conduction.

scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

scholarly journals Compact Modeling of Non-Linear Contact Effects in Short-Channel Coplanar and Staggered Organic Thin-Film Transistors

2021 ◽  
Author(s):  
Jakob Prüfer ◽  
Jakob Leise ◽  
Aristeidis Nikolaou ◽  
James W. Borchert ◽  
Ghader Darbandy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Schottky Barriers ◽  
Compact Modeling ◽  
Organic Thin Film ◽  
Short Channel ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Channel Lengths

<div>We present analytical physics-based compact models for the Schottky barriers at the interfaces between the organic semiconductor and the source and drain contacts in organic thin-film transistors (TFTs) fabricated in the coplanar and the staggered device architecture, and we illustrate the effect of these Schottky barriers on the current-voltage characteristics of the TFTs. The model for the source barrier explicitly takes into account the field-dependent barrier lowering due to image charges. Potential solutions have been derived by applying the Schwarz-Christoffel transformation, leading to expressions for the electric field at the source barrier and for the contact resistance at the source contact. With regard to the drain barrier, a generic compact-modeling scheme based on the current-voltage characteristics of a barrier-less TFT is introduced that can be applied to any compact dc model. Finally, both models are incorporated into an existing charge-based compact dc model and verified against the results of measurements performed on coplanar and staggered organic TFTs with channel lengths ranging from 0.5 μm to 10.5 μm.</div>

An Analytic Current–Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance

2008 ◽  
Vol 47 (4) ◽  
pp. 3174-3178 ◽  
Author(s):  
Keum-Dong Jung ◽  
Yoo Chul Kim ◽  
Byeong-Ju Kim ◽  
Byung-Gook Park ◽  
Hyungcheol Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Series Resistance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Current Voltage ◽  
Top Contact

Modeling and Scaling of a-Si:H and Poly-Si Thin Film Transistors

1997 ◽  
Vol 467 ◽  
Author(s):  
M. S. Shur ◽  
H. C Slade ◽  
T. Ytterdal ◽  
L. Wang ◽  
Z. Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Temperature Dependent ◽  
Short Channel ◽  
Device Scaling ◽  
Circuit Simulator ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Hydrogenated Amorphous ◽  
Si Thin Film

ABSTRACTWe have developed analytic SPICE models for hydrogenated amorphous silicon (a-Si:H) and polysilicon (poly-Si) thin film transistors (TFTs) which accurately model all regimes of operation, are temperature dependent to 150°C, and scale with device dimensions. These models have been presented in [1, 2]. In this work, we compare the current-voltage characteristics predicted by our models with the measured characteristics from TFTs fabricated at different foundries. We compare the extracted device parameters in order to evaluate the robustness of our models and to determine a suitable default parameter set. We also use the models to examine the effects of device scaling for short channel TFTs. The models can be accessed using the circuit simulator AIM-Spice [3], which is available at http://nina.ecse.rpi.edu/aimspice.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Onset Voltage

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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