Emission portrait of surface of reinforcing structural material

2020 ◽  
pp. 136-143
Author(s):  
Yu. Shmermbekk ◽  
D.B. Migas ◽  
A.I. Gutkovsky ◽  
L.I. Grechikhin

Atoms on the surface of solids are in the form of negative ions. To analyze the emission portrait of the crystal surface with scanning tunnel microscope with tungsten probe, voltage of not more than 2 V should by applied. Studied autoelectronic emission in scanning tunnel microscope is realized from one emission center. In scanning tunnel microscope, ponderomotor forces significantly distort of the surface structure of solid. Autoelectronic emission from the surface of solid is performed together with negative ions and Fermi level.

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Stephan Appelfeller

AbstractThe self-organized formation of single domain Au silicide nanowires is observed on Si(110). These nanowires are analysed using scanning tunnelling microscopy (STM) and spectroscopy (STS) as well as photoemission spectroscopy (PES). Core-level PES is utilised to confirm the formation of Au silicide and establish its presence as the top most surface structure, i.e., the nanowires. The growth of the Au silicide nanowires and their dimensions are studied by STM. They form for Au coverages of about 1 monolayer and are characterized by widths of about 2 to 3 nm and heights below 1 nm while reaching lengths exceeding 500 nm when choosing appropriate annealing temperatures. Valence band PES and STS indicate a small but finite density of states at the Fermi level typical for compound metals.


Author(s):  
Naoki Kobayashi ◽  
Shigenori Maeda ◽  
Shin Hosonuma ◽  
Kazushi Ohshima

1977 ◽  
Vol 38 (24) ◽  
pp. 1422-1425 ◽  
Author(s):  
E. G. McRae ◽  
J. M. Landwehr ◽  
C. W. Caldwell

1989 ◽  
Vol 163 ◽  
Author(s):  
L.J. Guido ◽  
Nick Holonyak

AbstractThe purpose of this work is to give an overview of the current phenomenological understanding of impurity-induced layer disordering (IILD). First, we identify key experimental findings such as the influence of the crystal surface-ambient interaction, the Fermi-level effect, and the impurity concentration on Al-Ga interdiffusion. Second, we review the strengths and weaknesses of existing IILD models in consideration of the above mentioned experimental data. Finally, we discuss the pitfalls involved in generalizing the results of individual Al-Ga interdiffusion experiments in order to explain a broader collection of IILD data.


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