Preparation and Tensile Test of SiC Fiber Fabricated by Three-stage Chemical Vapor Deposition

We succeed in synthesizing large-area single-layer graphene sheets with different grain size using C2H2 chemical vapor deposition process. Our graphene shows high uniformity and low sheet resistance to 1080Ω/□. By fabricating graphene-based field effect transistors (FETs), the relation between the nucleation density and the electronic properties of CVD grpahene are investigated. We found that the nucleation density can severely affect the defects formation in graphene, leading to the change in the electronic properties of graphene. We also check the strain sensitivity of CVD graphene. The as-grown graphene/Cu film was fixed onto the SiO2/Si substrate with a double-sided tape. The strain device is fabricated directly on the graphene-coated Cu foils by using the standard photolithography and reactive ion etching (RIE) process. Then the device is transferred onto a stretchable and flexible polydimethysiloxane (PDMS) substrate. By using a motorized stage, the tensile test is performed to investigate the piezoresistive properties of graphene-based strain sensors. The one-dimensional tensile test is performed to investigate the piezoresistive properties. A gauge factor 3.4 was achieved under the tensile deformation.

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Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I 2 system

Applied Surface Science ◽

10.1016/j.apsusc.2017.02.141 ◽

2017 ◽

Vol 406 ◽

pp. 62-68 ◽

Cited By ~ 5

Author(s):

Xian Luo ◽

Shuai Wu ◽

Yan-qing Yang ◽

Na Jin ◽

Shuai Liu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Titanium Coating ◽

Sic Fiber

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In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137653 ◽

1995 ◽

Vol 53 ◽

pp. 256-257

Author(s):

J. Drucker ◽

R. Sharma ◽

J. Kouvetakis ◽

K.H.J. Weiss

Keyword(s):

Electron Beam ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Quantum Effect ◽

Line Drawing ◽

Chemical Vapor ◽

Environmental Cell ◽

Engineering Changes ◽

Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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TEM of grain growth and phase transformations during creep of SCS-6 silicon carbide fibers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138129 ◽

1995 ◽

Vol 53 ◽

pp. 350-351

Author(s):

L. A. Giannuzzi ◽

C. A. Lewinsohn ◽

C. E. Bakis ◽

R. E. Tressler

Keyword(s):

Silicon Carbide ◽

Creep Rate ◽

Vapor Deposition ◽

Chemical Vapor ◽

Primary Creep ◽

Excess Carbon ◽

Silicon Carbide Fibers ◽

Sic Fiber ◽

Carbon Core ◽

Grain Width

The SCS-6 SiC fiber is a 142 μm diameter fiber consisting of four distinct regions of βSiC. These SiC regions vary in excess carbon content ranging from 10 a/o down to 5 a/o in the SiC1 through SiC3 region. The SiC4 region is stoichiometric. The SiC sub-grains in all regions grow radially outward from the carbon core of the fiber during the chemical vapor deposition processing of these fibers. In general, the sub-grain width changes from 50nm to 250nm while maintaining an aspect ratio of ~10:1 from the SiC1 through the SiC4 regions. In addition, the SiC shows a <110> texture, i.e., the {111} planes lie ±15° along the fiber axes. Previous has shown that the SCS-6 fiber (as well as the SCS-9 and the developmental SCS-50 μm fiber) undergoes primary creep (i.e., the creep rate constantly decreases as a function of time) throughout the lifetime of the creep test.

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The relaxation of compressive biaxial strains in SOS via microtwins

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100155013 ◽

1989 ◽

Vol 47 ◽

pp. 608-609

Author(s):

M. E. Twigg ◽

E. D. Richmond ◽

J. G. Pellegrino

Keyword(s):

Thin Film ◽

Chemical Vapor Deposition ◽

Molecular Beam Epitaxy ◽

Compressive Stress ◽

Vapor Deposition ◽

Partial Dislocation ◽

Molecular Beam ◽

Volume Fraction ◽

Chemical Vapor ◽

Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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