Study on the Small Signal Modulation Characteristic of Internal-Contact Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

2009 ◽  
Vol 36 (5) ◽  
pp. 1057-1061
Author(s):  
王同喜 Wang Tongxi ◽  
郭霞 Guo Xia ◽  
关宝璐 Guan Baolu ◽  
沈光地 Shen Guangdi
Keyword(s):  
Cavity Surface ◽  
Small Signal ◽  
Signal Modulation ◽  
Modulation Characteristic ◽  
Internal Contact ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Small Signal Modulation

scholarly journals Numerical model for small-signal modulation response in vertical-cavity surface-emitting lasers

2020 ◽  
Vol 53 (34) ◽  
pp. 345101
Author(s):  
Michał Wasiak ◽  
Patrycja Śpiewak ◽  
Nasibeh Haghighi ◽  
Marcin Gȩbski ◽  
Emilia Pruszyńska-Karbownik ◽  
...  
Keyword(s):  
Numerical Model ◽  
Cavity Surface ◽  
Small Signal ◽  
Signal Modulation ◽  
Modulation Response ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Small Signal Modulation

Large and small signal dynamics of vertical cavity surface emitting lasers

1993 ◽  
Vol 62 (4) ◽  
pp. 325-327 ◽  
Author(s):  
D. Tauber ◽  
G. Wang ◽  
R. S. Geels ◽  
J. E. Bowers ◽  
L. A. Coldren
Keyword(s):  
Cavity Surface ◽  
Small Signal ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Vertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice

2021 ◽  
Vol 2103 (1) ◽  
pp. 012176
Author(s):  
S S Rochas ◽  
L Karachinsky Ya ◽  
A V Babichev ◽  
I I Novikov ◽  
A G Gladyshev ◽  
...  
Keyword(s):  
Active Region ◽  
Spectral Range ◽  
Threshold Current ◽  
Cavity Surface ◽  
Wafer Fusion ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Small Signal Modulation

Abstract Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.

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